公开(公告)号：US09104833B2

公开(公告)日：2015-08-11

申请号：US14287079

申请日：2014-05-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Fang Kuo ,  Ming-Jui Chen ,  Ting-Cheng Tseng ,  Cheng-Te Wang

IPC: G03F1/00 ,  G06F17/50 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70466

Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.

Abstract translation: 用于双曝光处理的掩模组和使用所述掩模组的方法。 掩模组具有第一掩模图案，其具有第一基底和多个第一齿和突出部分，第二掩模图案具有第二基底和多个第二牙齿，其中第二基底可以至少部分地与 第一基座，使得每个突出部分至少部分地与第二齿中的一个齿重叠。

公开(公告)号：US08701052B1

公开(公告)日：2014-04-15

申请号：US13748564

申请日：2013-01-23

Applicant: United Microelectronics Corp.

Inventor： Hui-Fang Kuo ,  Ming-Jui Chen ,  Cheng-Te Wang

IPC: G06F17/50

CPC classification number: G03F7/70466 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441

Abstract: A method of optical proximity correction (OPC) includes the following steps. A layout pattern is provided to a computer system, and the layout pattern is classified into at least a first sub-layout pattern and at least a second sub-layout pattern. Then, at least an OPC calculation is performed respectively on the first sub-layout pattern and the second sub-layout pattern to form a corrected first sub-layout pattern and a corrected second sub-layout pattern. The corrected first sub-layout pattern/the corrected second sub-layout pattern and the layout pattern are compared to select a part of the corrected first sub-layout pattern/the corrected second sub-layout pattern as a first selected pattern/the second selected pattern, and the first selected pattern/the second selected pattern is further altered to modify the corrected first sub-layout pattern/the corrected second sub-layout pattern as a third sub-layout pattern/a fourth sub-layout pattern.

Abstract translation: 光学邻近校正（OPC）的方法包括以下步骤。 将布局图案提供给计算机系统，并且布局图案被分类为至少第一子布局图案和至少第二子布局图案。 然后，分别对第一子布局图案和第二子布局图案执行至少OPC计算，以形成校正的第一子布局图案和校正的第二子布局图案。 将校正的第一子布局图案/校正的第二子布局图案和布局图案进行比较，以选择校正的第一子布局图案的一部分/校正的第二子布局图案作为第一选定图案/第二选定图案 进一步改变第一选择图案/第二选择图案，以将修正的第一子布局图案/校正后的第二子布局图案修改为第三子布局图案/第四子布局图案。

公开(公告)号：US08627242B1

公开(公告)日：2014-01-07

申请号：US13754257

申请日：2013-01-30

Applicant: United Microelectronics Corp.

Inventor： Hui-Fang Kuo ,  Ming-Jui Chen ,  Cheng-Te Wang

IPC: G06F17/50

CPC classification number: G03F1/36 ,  G03F1/70

Abstract: A method for making a photomask layout is provided. A first graphic data of a photomask is provided, wherein the first graphic data includes a first line with a first line end target, a second line with a second line end target and a hole, the first line is aligned with the second line, and the first line, the second line and the hole partially overlap with each other. Thereafter, a retarget step is performed to the first graphic data to obtain a second graphic data, wherein the retarget step includes moving the first line end target and the second line end target in opposite directions away from each other.

Abstract translation: 提供了制造光掩模布局的方法。 提供光掩模的第一图形数据，其中第一图形数据包括具有第一行末端目标的第一行，具有第二行末端目标的第二行和第一行，第一行与第二行对齐，以及 第一线，第二线和孔部分地彼此重叠。 此后，对第一图形数据执行再次目标步骤以获得第二图形数据，其中重新目标步骤包括使第一行末端目标和第二行终点目标彼此相反的方向移动。

公开(公告)号：US11934106B2

公开(公告)日：2024-03-19

申请号：US17880700

申请日：2022-08-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Yen Liu ,  Hui-Fang Kuo ,  Chian-Ting Huang ,  Wei-Cyuan Lo ,  Yung-Feng Cheng ,  Chung-Yi Chiu

IPC: G03F7/00 ,  G03F1/36

CPC classification number: G03F7/70441 ,  G03F1/36 ,  G03F7/705

Abstract: An optical proximity correction (OPC) device and method is provided. The OPC device includes an analysis unit, a reverse pattern addition unit, a first OPC unit, a second OPC unit and an output unit. The analysis unit is configured to analyze a defect pattern from a photomask layout. The reverse pattern addition unit is configured to provide a reverse pattern within the defect pattern. The first OPC unit is configured to perform a first OPC procedure on whole of the photomask layout. The second OPC unit is configured to perform a second OPC procedure on the defect pattern of the photomask layout to enhance an exposure tolerance window. The output unit is configured to output the photomask layout which is corrected.

公开(公告)号：US08930858B1

公开(公告)日：2015-01-06

申请号：US14091345

申请日：2013-11-27

Applicant: United Microelectronics Corp.

Inventor： Hui-Fang Kuo ,  Ming-Jui Chen

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A smooth process is provided in the present invention. The smooth process is applied to a retarget layout, wherein the retarget layout is dissected into a plurality of segments. Furthermore, the retarget layout comprises a first original pattern, a first adding pattern and a second adding pattern. The smooth process includes changing the second adding pattern to a first smooth pattern. Latter, a second smooth pattern is added to extend from a bottom of the first smooth pattern and a tail portion of the first adding pattern is shrunk to a third smooth pattern. After the smooth process, an optical proximity correction process is applied to the smooth layout to produce an optical proximity correction layout.

Abstract translation: 在本发明中提供了一个平滑的过程。 平滑过程被应用于重定向布局，其中重新定位布局被解剖成多个段。 此外，重定向布局包括第一原始图案，第一添加图案和第二添加图案。 平滑处理包括将第二加法图案改变为第一平滑图案。 较后者，添加第二平滑图案以从第一平滑图案的底部延伸，并且第一添加图案的尾部部分收缩到第三平滑图案。 在平滑处理之后，将光学邻近校正处理应用于平滑布局以产生光学邻近校正布局。

公开(公告)号：US20140258946A1

公开(公告)日：2014-09-11

申请号：US14287079

申请日：2014-05-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Fang Kuo ,  Ming-Jui Chen ,  Ting-Cheng Tseng ,  Cheng-Te Wang

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70466

Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.

Abstract translation: 用于双曝光处理的掩模组和使用所述掩模组的方法。 掩模组具有第一掩模图案，其具有第一基底和多个第一齿和突出部分，第二掩模图案具有第二基底和多个第二牙齿，其中第二基底可以至少部分地与 第一基座，使得每个突出部分至少部分地与第二齿中的一个齿重叠。