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公开(公告)号：US20150036116A1
公开(公告)日：2015-02-05
申请号：US13957436
申请日：2013-08-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Te-Hsien Hsieh , Shih-Ming Kuo , Ming-Jui Chen , Cheng-Te Wang , Jing-Yi Lee
IPC: G03F7/20
CPC classification number: G03F7/70308 , G03F7/7025
Abstract: An aperture is configured to be disposed between an illumination source and a semiconductor substrate in a photolithography system. The aperture includes a light-transmission portion with a non-planar thickness profile to compensate the discrepancy of wave-fronts of the light beams of different orders.
Abstract translation: 孔被配置为在光刻系统中设置在照明源和半导体衬底之间。 孔径包括具有非平面厚度轮廓的光透射部分，以补偿不同阶数的光束的波前差异。
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2.发明申请METHOD FOR MANUFACTURING SEMICONDUCTOR LAYOUT PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权用于制造半导体布局图案的方法，制造半导体器件的方法和半导体器件公开(公告)号：US20140131832A1
公开(公告)日：2014-05-15
申请号：US13674965
申请日：2012-11-13
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yu-Shiang Yang , Cheng-Te Wang
CPC classification number: H01L29/02 , H01L21/3081 , H01L21/3086 , H01L21/76224
Abstract: A method for manufacturing a semiconductor device includes providing a substrate having a mask layer formed thereon, providing a first photomask having a first layout pattern and a second photomask having a second layout pattern, the first layout pattern including a plurality of active area portions and at least a neck portion connecting two adjacent active area portions, transferring the first layout pattern from the first photomask to the mask layer to form a plurality of active area patterns and at least a neck pattern connecting two adjacent active area patterns in the mask layer, and transferring the second layout pattern from the second photomask to the mask layer to remove the neck pattern to form a patterned mask. The patterned mask includes the active area patterns. A slot is at least formed between the two adjacent active area patterns.
Abstract translation: 一种制造半导体器件的方法，包括提供其上形成有掩模层的衬底，提供具有第一布局图案的第一光掩模和具有第二布局图案的第二光掩模，所述第一布局图案包括多个有效区域部分， 连接两个相邻有效区域部分的至少一个颈部部分，将第一布局图案从第一光掩模转移到掩模层以形成多个有源区域图案和至少连接掩模层中的两个相邻有源区域图案的颈部图案，以及 将第二布局图案从第二光掩模转印到掩模层以去除颈部图案以形成图案化掩模。 图案化掩模包括有源区域图案。 至少在两个相邻有效区域图案之间形成槽。
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公开(公告)号：US09047658B2
公开(公告)日：2015-06-02
申请号：US14071667
申请日：2013-11-05
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Te-Hsien Hsieh , Ming-Jui Chen , Cheng-Te Wang , Ping-I Hsieh , Jing-Yi Lee
CPC classification number: G06T7/0004 , G03F1/36 , G06K9/00 , G06T7/001 , G06T2207/30148
Abstract: A calculation method of optical proximity correction includes providing at least a feature pattern to a computer system. At least a first template and a second template are defined so that portions of the feature pattern are located in the first template and the rest of the feature pattern is located in the second template. The first template and the second template have a common boundary. Afterwards, a first calculation zone is defined to overlap an entire first template and portions of the feature pattern out of the first template. Edges of the feature pattern within the first calculation zone are then fragmented from the common boundary towards two ends of the feature pattern so as to generate at least two first beginning segments respectively at two sides of the common boundary. Finally, positions of the first beginning segments are adjusted so as to generate first adjusted segments.
Abstract translation: 光学邻近校正的计算方法包括至少向计算机系统提供特征图案。 定义至少第一模板和第二模板，使得特征图案的部分位于第一模板中，并且特征图案的其余部分位于第二模板中。 第一个模板和第二个模板有一个共同的边界。 之后，定义第一计算区域以将整个第一模板和第一模板中的特征模式的部分重叠。 然后将第一计算区域内的特征图案的边缘从公共边界分割成特征图案的两端，以便分别在公共边界的两侧产生至少两个第一开始段。 最后，调整第一起始段的位置，以产生第一调整段。
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公开(公告)号：US09785046B2
公开(公告)日：2017-10-10
申请号：US14601250
申请日：2015-01-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Te-Hsien Hsieh , Ming-Jui Chen , Cheng-Te Wang , Jing-Yi Lee , Jian-Yuan Ma , Yan-Chun Chen
Abstract: The present invention provides a pattern verifying method. First, a target pattern is decomposed into a first pattern and a second pattern. A first OPC process is performed for the first pattern to form a first revised pattern, and a second OPC process is performed for the second pattern to form a second revised pattern. An inspection process is performed, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.
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5.发明授权Method for manufacturing semiconductor layout pattern, method for manufacturing semiconductor device, and semiconductor device 有权半导体布局图案的制造方法，半导体装置的制造方法以及半导体装置公开(公告)号：US09171898B2
公开(公告)日：2015-10-27
申请号：US13674965
申请日：2012-11-13
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yu-Shiang Yang , Cheng-Te Wang
IPC: H01L21/20 , H01L21/36 , H01L29/02 , H01L21/308 , H01L21/762
CPC classification number: H01L29/02 , H01L21/3081 , H01L21/3086 , H01L21/76224
Abstract: A method for manufacturing a semiconductor device includes providing a substrate having a mask layer formed thereon, providing a first photomask having a first layout pattern and a second photomask having a second layout pattern, the first layout pattern including a plurality of active area portions and at least a neck portion connecting two adjacent active area portions, transferring the first layout pattern from the first photomask to the mask layer to form a plurality of active area patterns and at least a neck pattern connecting two adjacent active area patterns in the mask layer, and transferring the second layout pattern from the second photomask to the mask layer to remove the neck pattern to form a patterned mask. The patterned mask includes the active area patterns. A slot is at least formed between the two adjacent active area patterns.
Abstract translation: 一种制造半导体器件的方法，包括提供其上形成有掩模层的衬底，提供具有第一布局图案的第一光掩模和具有第二布局图案的第二光掩模，所述第一布局图案包括多个有效区域部分， 连接两个相邻有效区域部分的至少一个颈部部分，将第一布局图案从第一光掩模转移到掩模层以形成多个有源区域图案和至少连接掩模层中的两个相邻有源区域图案的颈部图案，以及 将第二布局图案从第二光掩模转印到掩模层以去除颈部图案以形成图案化掩模。 图案化掩模包括有源区域图案。 至少在两个相邻有效区域图案之间形成槽。
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Patent Agency Ranking
公开(公告)号：US20160147140A1
公开(公告)日：2016-05-26
申请号：US14601250
申请日：2015-01-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Te-Hsien Hsieh , Ming-Jui Chen , Cheng-Te Wang , Jing-Yi Lee , Jian-Yuan Ma , Yan-Chun Chen
IPC: G03F1/36 , G03F1/72 , H01L21/308 , G03F1/84 , H01L21/66 , H01L21/027
Abstract: The present invention provides a pattern verifying method. First, a target pattern is decomposed into a first pattern and a second pattern. A first OPC process is performed for the first pattern to form a first revised pattern, and a second OPC process is performed for the second pattern to form a second revised pattern. An inspection process is performed, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.
Abstract translation: 本发明提供一种模式验证方法。 首先，将目标图案分解为第一图案和第二图案。 对第一图案执行第一OPC处理以形成第一修订图案，并且对第二图案执行第二OPC处理以形成第二修改图案。 执行检查过程，其中检查过程包括后掩模检查（AMI）处理，其包括考虑目标图案，第一图案和第二图案。
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7.发明授权公开(公告)号：US09104833B2
公开(公告)日：2015-08-11
申请号：US14287079
申请日：2014-05-26
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Hui-Fang Kuo , Ming-Jui Chen , Ting-Cheng Tseng , Cheng-Te Wang
CPC classification number: G06F17/5081 , G03F1/00 , G03F1/70 , G03F7/20 , G03F7/70466
Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.
Abstract translation: 用于双曝光处理的掩模组和使用所述掩模组的方法。 掩模组具有第一掩模图案，其具有第一基底和多个第一齿和突出部分，第二掩模图案具有第二基底和多个第二牙齿，其中第二基底可以至少部分地与 第一基座，使得每个突出部分至少部分地与第二齿中的一个齿重叠。
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8.发明授权公开(公告)号：US08701052B1
公开(公告)日：2014-04-15
申请号：US13748564
申请日：2013-01-23
Applicant: United Microelectronics Corp.
Inventor： Hui-Fang Kuo , Ming-Jui Chen , Cheng-Te Wang
IPC: G06F17/50
CPC classification number: G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70441
Abstract: A method of optical proximity correction (OPC) includes the following steps. A layout pattern is provided to a computer system, and the layout pattern is classified into at least a first sub-layout pattern and at least a second sub-layout pattern. Then, at least an OPC calculation is performed respectively on the first sub-layout pattern and the second sub-layout pattern to form a corrected first sub-layout pattern and a corrected second sub-layout pattern. The corrected first sub-layout pattern/the corrected second sub-layout pattern and the layout pattern are compared to select a part of the corrected first sub-layout pattern/the corrected second sub-layout pattern as a first selected pattern/the second selected pattern, and the first selected pattern/the second selected pattern is further altered to modify the corrected first sub-layout pattern/the corrected second sub-layout pattern as a third sub-layout pattern/a fourth sub-layout pattern.
Abstract translation: 光学邻近校正（OPC）的方法包括以下步骤。 将布局图案提供给计算机系统，并且布局图案被分类为至少第一子布局图案和至少第二子布局图案。 然后，分别对第一子布局图案和第二子布局图案执行至少OPC计算，以形成校正的第一子布局图案和校正的第二子布局图案。 将校正的第一子布局图案/校正的第二子布局图案和布局图案进行比较，以选择校正的第一子布局图案的一部分/校正的第二子布局图案作为第一选定图案/第二选定图案 进一步改变第一选择图案/第二选择图案，以将修正的第一子布局图案/校正后的第二子布局图案修改为第三子布局图案/第四子布局图案。
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公开(公告)号：US08627242B1
公开(公告)日：2014-01-07
申请号：US13754257
申请日：2013-01-30
Applicant: United Microelectronics Corp.
Inventor： Hui-Fang Kuo , Ming-Jui Chen , Cheng-Te Wang
IPC: G06F17/50
Abstract: A method for making a photomask layout is provided. A first graphic data of a photomask is provided, wherein the first graphic data includes a first line with a first line end target, a second line with a second line end target and a hole, the first line is aligned with the second line, and the first line, the second line and the hole partially overlap with each other. Thereafter, a retarget step is performed to the first graphic data to obtain a second graphic data, wherein the retarget step includes moving the first line end target and the second line end target in opposite directions away from each other.
Abstract translation: 提供了制造光掩模布局的方法。 提供光掩模的第一图形数据，其中第一图形数据包括具有第一行末端目标的第一行，具有第二行末端目标的第二行和第一行，第一行与第二行对齐，以及 第一线，第二线和孔部分地彼此重叠。 此后，对第一图形数据执行再次目标步骤以获得第二图形数据，其中重新目标步骤包括使第一行末端目标和第二行终点目标彼此相反的方向移动。
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公开(公告)号：US10474026B2
公开(公告)日：2019-11-12
申请号：US15335458
申请日：2016-10-27
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kuei-Hsu Chou , Cheng-Te Wang , Yung-Feng Cheng , Jing-Yi Lee
Abstract: A method of correcting a layout pattern is provided in the present invention. The method includes the following steps. A layout pattern including at least two adjacent rectangular sub patterns is provided. The layout pattern is then input into a computer system. An optical proximity correction including a bevel correction is then performed. The bevel correction includes forming a bevel at a corner of at least one of the two adjacent rectangular sub patterns, wherein the bevel is formed by chopping the corner, and moving the bevel toward an interaction of two neighboring segments of the bevel if a distance between the bevel and the other rectangular sub pattern is larger than a minimum value. The angle between a surface of the bevel and a surface of the rectangular sub pattern is not rectangular. The layout pattern is output to a mask after the optical proximity correction.
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