公开(公告)号：US20170310077A1

公开(公告)日：2017-10-26

申请号：US15133334

申请日：2016-04-20

Applicant: Trumpf Photonics, Inc.

Inventor： Qiang Zhang ,  Haiyan An ,  Hans Georg Treusch

IPC: H01S5/028 ,  H01S5/10 ,  H01S5/343 ,  C23C14/46 ,  H01J37/32 ,  C30B23/06 ,  C30B29/48

CPC classification number: H01S5/0282 ,  C23C14/021 ,  C23C14/46 ,  C23C14/568 ,  C30B23/02 ,  C30B23/066 ,  C30B29/48 ,  H01J37/32082 ,  H01J37/32743 ,  H01J37/32816 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/335 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/10 ,  H01S5/34313 ,  H01S5/4025

Abstract: Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

公开(公告)号：US09972968B2

公开(公告)日：2018-05-15

申请号：US15133334

申请日：2016-04-20

Applicant: Trumpf Photonics, Inc.

Inventor： Qiang Zhang ,  Haiyan An ,  Hans Georg Treusch

IPC: H01S5/02 ,  H01S5/028 ,  H01S5/343 ,  H01S5/10 ,  H01J37/32 ,  C30B23/06 ,  C30B29/48 ,  C23C14/46

CPC classification number: H01S5/0282 ,  C23C14/021 ,  C23C14/46 ,  C23C14/568 ,  C30B23/02 ,  C30B23/066 ,  C30B29/48 ,  H01J37/32082 ,  H01J37/32743 ,  H01J37/32816 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/335 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/10 ,  H01S5/34313 ,  H01S5/4025

Abstract: Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.