公开(公告)号：US10224401B2

公开(公告)日：2019-03-05

申请号：US15564498

申请日：2017-05-31

Applicant: Transphorm Inc.

Inventor： Umesh Mishra ,  Rakesh K. Lal ,  Geetak Gupta ,  Carl Joseph Neufeld ,  David Rhodes

IPC: H01L29/00 ,  H01L23/495 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/10

Abstract: A III-N device includes a III-N layer structure including a III-N channel layer, a III-N barrier layer over the III-N channel layer, and a graded III-N layer over the III-N barrier layer having a first side adjacent to the III-N barrier layer and a second side opposite the first side; a first power electrode and a second power electrode; and a gate between the first and second power electrodes, the gate being over the III-N layer structure. A composition of the graded III-N layer is graded so the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent to the second side. A region of the graded III-N layer is (i) between the gate and the second power electrode, and (ii) electrically connected to the first power electrode and electrically isolated from the second power electrode.

公开(公告)号：US20200119179A1

公开(公告)日：2020-04-16

申请号：US16598510

申请日：2019-10-10

Applicant: Transphorm Inc.

Inventor： Umesh Mishra ,  Davide Bisi ,  Geetak Gupta ,  Carl Joseph Neufeld ,  Brian L. Swenson ,  Rakesh K. Lal

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/10 ,  H01L29/06 ,  H01L29/66

Abstract: A lateral III-N device has a vertical gate module with III-N material orientated in an N-polar or a group-III polar orientation. A III-N material structure has a III-N buffer layer, a III-N barrier layer, and a III-N channel layer. A compositional difference between the III-N barrier layer and the III-N channel layer causes a 2DEG channel to be induced in the III-N channel layer. A p-type III-N body layer is disposed over the III-N channel layer in a source side access region but not over a drain side access region. A n-type III-N capping layer over the p-type III-N body layer. A source electrode that contacts the n-type III-N capping layer is electrically connected to the p-type III-N body layer and is electrically isolated from the 2DEG channel when the gate electrode is biased relative to the source electrode at a voltage that is below a threshold voltage.

公开(公告)号：US20190198615A1

公开(公告)日：2019-06-27

申请号：US16287211

申请日：2019-02-27

Applicant: Transphorm Inc.

Inventor： Umesh Mishra ,  Rakesh K. Lal ,  Geetak Gupta ,  Carl Joseph Neufeld ,  David Rhodes

IPC: H01L29/06 ,  H01L29/205 ,  H01L29/20 ,  H01L29/778 ,  H01L29/40 ,  H01L29/872 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/0688 ,  H01L23/49562 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7786 ,  H01L29/872

Abstract: A III-N device includes a III-N layer structure including a III-N channel layer, a III-N barrier layer over the III-N channel layer, and a graded III-N layer over the III-N barrier layer having a first side adjacent to the III-N barrier layer and a second side opposite the first side; a first power electrode and a second power electrode; and a gate between the first and second power electrodes, the gate being over the III-N layer structure. A composition of the graded III-N layer is graded so the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent to the second side. A region of the graded III-N layer is (i) between the gate and the second power electrode, and (ii) electrically connected to the first power electrode and electrically isolated from the second power electrode.

公开(公告)号：US20180158909A1

公开(公告)日：2018-06-07

申请号：US15564498

申请日：2017-05-31

Applicant: Transphorm Inc.

Inventor： Umesh Mishra ,  Rakesh K. Lal ,  Geetak Gupta ,  Carl Joseph Neufeld ,  David Rhodes

IPC: H01L29/06 ,  H01L29/205 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778 ,  H01L29/66 ,  H01L29/872 ,  H01L23/495

CPC classification number: H01L29/0688 ,  H01L23/49562 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7786 ,  H01L29/872

Abstract: A III-N device includes a III-N layer structure including a III-N channel layer, a III-N barrier layer over the III-N channel layer, and a graded III-N layer over the III-N barrier layer having a first side adjacent to the III-N barrier layer and a second side opposite the first side; a first power electrode and a second power electrode; and a gate between the first and second power electrodes, the gate being over the III-N layer structure. A composition of the graded III-N layer is graded so the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent to the second side. A region of the graded III-N layer is (i) between the gate and the second power electrode, and (ii) electrically connected to the first power electrode and electrically isolated from the second power electrode.