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公开(公告)号：US10388536B2
公开(公告)日：2019-08-20
申请号：US15527622
申请日：2015-11-17
发明人： Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami , Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma
IPC分类号： H01L21/306 , H01L21/67 , C30B29/36 , C30B33/12 , H01L21/302 , C30B35/00
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
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公开(公告)号：US20170345672A1
公开(公告)日：2017-11-30
申请号：US15527526
申请日：2015-11-17
发明人： Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma , Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami
IPC分类号： H01L21/306 , H01L21/04 , C30B33/12 , H01L21/304 , C30B29/36
CPC分类号： H01L21/30621 , C30B29/36 , C30B33/12 , H01L21/0445 , H01L21/302 , H01L21/304
摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.
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公开(公告)号：US10665465B2
公开(公告)日：2020-05-26
申请号：US15527526
申请日：2015-11-17
发明人： Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma , Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami
IPC分类号： H01L21/306 , C30B29/36 , C30B33/12 , H01L21/302 , H01L21/04 , H01L21/304
摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.
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公开(公告)号：US20170323797A1
公开(公告)日：2017-11-09
申请号：US15527622
申请日：2015-11-17
发明人： Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami , Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma
IPC分类号： H01L21/306 , H01L21/67
CPC分类号： H01L21/30604 , C30B29/36 , C30B33/12 , C30B35/002 , H01L21/302 , H01L21/67063
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
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公开(公告)号：US11952678B2
公开(公告)日：2024-04-09
申请号：US17606738
申请日：2020-04-24
发明人： Tadaaki Kaneko
摘要： The present invention addresses the problem of providing a novel method for manufacturing a SiC substrate, and a manufacturing device for said method. The present invention realizes: a method for manufacturing a SiC substrate, comprising heating two mutually opposing SiC single-crystal substrates and transporting a raw material from one SiC single-crystal substrate to the other SiC single-crystal substrate; and a manufacturing device for said method. Through the present invention, each of the mutually opposing SiC single-crystal substrate surfaces can be used as a raw material for crystal growth of the other SiC single-crystal substrate surface, and it is therefore possible to realize a highly economical method for manufacturing a SiC substrate.
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公开(公告)号：US20220259759A1
公开(公告)日：2022-08-18
申请号：US17734511
申请日：2022-05-02
发明人： Tadaaki Kaneko , Yasunori Kutsuma , Koji Ashida , Ryo Hashimoto
摘要： Disclosed is a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment. The SiC container may be heated in Si atmosphere to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space. The SiC container may be heated in a TaC container of a material including TaC supplemented with a source of Si to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space.
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公开(公告)号：US20200279716A1
公开(公告)日：2020-09-03
申请号：US16879208
申请日：2020-05-20
发明人： Tadaaki Kaneko , Koji Ashida
摘要： A reference sample (41) has a step/terrace structure made of monocrystalline SiC and a surface of each terrace has first or second stack orientation. In the reference sample (41), contrast as difference in lightness and darkness between an image of a terrace with a surface directly under which the first stack orientation lies and an image of a terrace with a surface directly under which the second stack orientation lies changes according to an incident electron angle which is an angle that an electron beam emitted from a scanning electron microscope forms with a perpendicular to the terrace surface. Even when a SiC substrate has an off angle (e.g., from 1° to 8°), using an inclined support base (20a) capable of correcting the off angle enables sharp contrast that reflects difference between the first and second stack orientations directly under the surface to be obtained irrespective of the off angle.
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公开(公告)号：US20180233358A1
公开(公告)日：2018-08-16
申请号：US15906596
申请日：2018-02-27
发明人： Tadaaki Kaneko , Noboru Ohtani , Kenta Hagiwara
IPC分类号： H01L21/02 , H01L21/04 , H01L21/306 , H01L29/16 , H01L21/67 , H01L21/677 , H01L21/687 , H01L21/324 , H01L29/04 , H01L21/302 , C30B31/22 , H01L21/3065 , C30B29/36
CPC分类号： H01L21/02529 , C30B29/36 , C30B31/22 , H01L21/02019 , H01L21/02378 , H01L21/02433 , H01L21/0262 , H01L21/02623 , H01L21/02658 , H01L21/0415 , H01L21/046 , H01L21/0475 , H01L21/0485 , H01L21/049 , H01L21/302 , H01L21/30625 , H01L21/3065 , H01L21/324 , H01L21/67109 , H01L21/67757 , H01L21/68764 , H01L21/68771 , H01L29/045 , H01L29/1608
摘要： In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate (70) performed the ion activation step are removed by heating the substrate (70) under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate (70) is performed.
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公开(公告)号：US09941116B2
公开(公告)日：2018-04-10
申请号：US14897380
申请日：2014-06-06
发明人： Tadaaki Kaneko , Noboru Ohtani , Kenta Hagiwara
IPC分类号： H01L21/20 , H01L21/36 , H01L21/02 , C30B29/36 , C30B31/22 , H01L21/302 , H01L21/67 , H01L21/677 , H01L21/687 , H01L21/3065 , H01L29/16 , H01L21/04 , H01L29/04 , H01L21/306 , H01L21/324
CPC分类号： H01L21/02529 , C30B29/36 , C30B31/22 , H01L21/02019 , H01L21/02378 , H01L21/02433 , H01L21/0262 , H01L21/02623 , H01L21/02658 , H01L21/0415 , H01L21/046 , H01L21/0475 , H01L21/0485 , H01L21/049 , H01L21/302 , H01L21/30625 , H01L21/3065 , H01L21/324 , H01L21/67109 , H01L21/67757 , H01L21/68764 , H01L21/68771 , H01L29/045 , H01L29/1608
摘要： In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate (70) performed the ion activation step are removed by heating the substrate (70) under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate (70) is performed.
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公开(公告)号：US12098476B2
公开(公告)日：2024-09-24
申请号：US17633118
申请日：2020-08-05
发明人： Tadaaki Kaneko , Kiyoshi Kojima
CPC分类号： C30B25/20 , C30B25/186 , C30B29/36 , C30B33/04
摘要： The present invention addresses the problem of providing a novel SiC substrate production method. The SiC substrate production method according to the present invention comprises an etching step S10 of etching a SiC base substrate 10, a crystal growth step S20 of growing a SiC substrate layer 13 on the SiC base substrate 10 to produce a SiC substrate body 20, and a peeling step S30 of peeling at least a portion of the SiC substrate body 20 to produce a SiC substrate 30, the method being characterized in that each of the etching step S10 and the crystal growth step S20 is a step of arranging the SiC base substrate 10 and a SiC material 40 so as to face each other and heating the SiC base substrate 10 and the SiC material 40 so as to form a temperature gradient between the SiC base substrate 10 and the SiC material 40.
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