Abstract:
According to one embodiment, a semiconductor storage device includes a nonvolatile semiconductor memory, a temporary storage buffer that temporarily stores writing data to be written to the nonvolatile semiconductor memory, and a coding processing unit that divides coding target data of an error correction code into two or more divided data and writes an error correction code obtained by performing an error correction coding process based on the divided data stored in the temporary storage buffer to the temporary storage buffer as an intermediate code.
Abstract:
According to an embodiment, a semiconductor storage device includes an error correction processing unit that executes encoding process related data to be dispersedly written over a plurality of memory areas and decoding process related data dispersedly written over the plurality of memory areas. A transfer management unit determines whether or not data related to the data transfer request is a target of the error correction process and causes the error correction processing unit to execute the error correction process only with respect to the data determined as the target of the error correction process.
Abstract:
According to one embodiment, a semiconductor storage device includes a nonvolatile semiconductor memory, a temporary storage buffer that temporarily stores writing data to be written to the nonvolatile semiconductor memory, and a coding processing unit that divides coding target data of an error correction code into two or more divided data and writes an error correction code obtained by performing an error correction coding process based on the divided data stored in the temporary storage buffer to the temporary storage buffer as an intermediate code.
Abstract:
In a successive approximation ADC, resolution is limited because a distortion occurs in an A/D conversion result due to a voltage dependence of a sampling capacitance. An A/D converter includes a sampling capacitor part in which capacitors equal in capacitance value to each other are connected inversely, a successive approximation A/D conversion part that conducts A/D conversion on the sampling charge, a digital correction part that corrects capacitance variation of internal DAC capacitors in the successive approximation A/D conversion part, and a digital correction part that digitally corrects a third-order or more factor of a voltage dependence of the sampling charge.
Abstract:
In the digital calibration technique of the conventional time-interleaved analog/digital converter, it is impossible to perform highly-accurate calibration that supports a high-speed sampling rate of the next-generation application and achieves a high resolution. For its solution, a reference A/D conversion unit is connected in parallel to an input common to a time-interleaved A/D converter to be a calibration target, and the output of each unitary A/D conversion unit which makes up the time-interleaved A/D converter is calibrated in a digital region by using a low-speed high-resolution A/D conversion result output from the reference A/D conversion unit. Also, fCLK/N (fCLK represents an overall sampling rate of the time-interleaved A/D converter, and N is relatively prime to the number of unitary A/D conversion units connected in parallel M) is set as the operation clock frequency of the reference A/D conversion unit. In this configuration, samplings of all unitary A/D conversion units can be sequentially synchronized with the sampling of the reference A/D conversion unit, and the operation clock frequency of the reference A/D converter can be made N times slower than the overall sampling rate of the time-interleaved A/D converter.
Abstract:
In the digital calibration technique of the conventional time-interleaved analog/digital converter, it is impossible to perform highly-accurate calibration that supports a high-speed sampling rate of the next-generation application and achieves a high resolution. For its solution, a reference A/D conversion unit is connected in parallel to an input common to a time-interleaved A/D converter to be a calibration target, and the output of each unitary A/D conversion unit which makes up the time-interleaved A/D converter is calibrated in a digital region by using a low-speed high-resolution A/D conversion result output from the reference A/D conversion unit. Also, fCLK/N (fCLK represents an overall sampling rate of the time-interleaved A/D converter, and N is relatively prime to the number of unitary A/D conversion units connected in parallel M) is set as the operation clock frequency of the reference A/D conversion unit. In this configuration, samplings of all unitary A/D conversion units can be sequentially synchronized with the sampling of the reference A/D conversion unit, and the operation clock frequency of the reference A/D converter can be made N times slower than the overall sampling rate of the time-interleaved A/D converter.
Abstract:
A semiconductor device includes a transfer section which receives, from an external source, a second program for modifying a function of a first program stored in a read-only memory (ROM) and information required in activation of the second program, and which writes the program and the information to a nonvolatile semiconductor memory, and a load section which activates the second program on the basis of the information written to the nonvolatile semiconductor memory to modify the function of the first program.
Abstract:
In a wireless transmitter and receiver, a background calibration type analog-to-digital converter generally occupies a large area because of the phase compensating capacity of an op-amp included in a reference analog-to-digital conversion unit. Further, the calibration type analog-to-digital converter generally requires a sample and hold circuit to exclude influence of parasitic capacitance of wirings, thereby increasing power consumption. Digital calibration is performed by using, as a signal for calibration, an input signal of a digital-to-analog converter in a transmitter circuit of the wireless transmitter and receiver and inputting an output signal from the digital-to-analog converter to the analog-to-digital converter in the receiver circuit.
Abstract:
In an analog-to-digital converter, when a capacitive element with a small capacitance is used in order to reduce power consumption, the characteristics of the analog-to-digital converter deteriorate due to the variation in the specific accuracy. Further, the method of reducing the variation with the specific accuracy causes an increase in the size of the circuit and power consumption. An analog-to-digital converter includes an analog core unit having at least one capacitive element. The capacitive element includes a capacitive bank having plural capacitive element units having substantially the same capacitance value, and the capacitive bank is configured to select one capacitive element unit from the plural capacitive element units with substantially equal probability.
Abstract:
A memory unit includes a plurality of first blocks each having a first block size. Each of the first blocks stores data of a plurality of second blocks each having a second block size which is smaller than the first block size. A control unit writes the data of the second block in the first block. The control unit is configured such that in a case where the second block to be written is a block that is to be written in the same first block as the second block that is already written in the first block, the second block to be written is written in the same first block even if an address of the second block to be written is not consecutive to an address of the second block that is already written in the first block.