公开(公告)号：US20080061384A1

公开(公告)日：2008-03-13

申请号：US11936443

申请日：2007-11-07

Applicant: Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

Inventor： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L29/78

CPC classification number: H01L21/823462 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/823412 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78696

Abstract: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Abstract translation: 在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。 氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。 作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下， 在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。 因此，控制氧扩散，防止漏电流的产生，提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

公开(公告)号：US07608899B2

公开(公告)日：2009-10-27

申请号：US11936443

申请日：2007-11-07

Applicant: Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

Inventor： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L29/76 ,  H01L29/94

CPC classification number: H01L21/823462 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/823412 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78696

Abstract: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Abstract translation: 在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅极电介质膜6,7和栅极放电层8,9作为MOS晶体管。 氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。 作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下， 在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。 因此，控制氧扩散，防止漏电流的产生，提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

公开(公告)号：US07358578B2

公开(公告)日：2008-04-15

申请号：US10155833

申请日：2002-05-22

Applicant: Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

Inventor： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC classification number: H01L21/823462 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/823412 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78696

Abstract: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Abstract translation: 在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。 氧化锆或氧化铪被用作栅介质膜6,7的主要成分。 栅介质膜6,7例如通过CVD形成。 作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。 在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气 扩散被控制。 因此，控制氧扩散，防止漏电流的产生，提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

公开(公告)号：US20070096189A1

公开(公告)日：2007-05-03

申请号：US11594780

申请日：2006-11-09

Applicant: Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

Inventor： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L29/94 ,  H01L21/8242

CPC classification number: H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L27/10814 ,  H01L28/40 ,  H01L28/60 ,  H01L29/513

Abstract: In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.

Abstract translation: 为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极 并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。 或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

公开(公告)号：US06489648B2

公开(公告)日：2002-12-03

申请号：US09944485

申请日：2001-08-30

Applicant: Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

Inventor： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L27108

CPC classification number: H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10873 ,  H01L28/56 ,  H01L28/57 ,  H01L29/4975 ,  H01L29/513

Abstract: A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.

公开(公告)号：US07217971B2

公开(公告)日：2007-05-15

申请号：US10848473

申请日：2004-05-17

Applicant: Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

Inventor： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L31/119

CPC classification number: H01L21/823462 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/823412 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78696

Abstract: Diffusion layers 2–5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2–5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Abstract translation: 在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8,9，以便成为MOS晶体管。 氧化锆或氧化铪被用作栅介质膜6,7的主要成分。 栅介质膜6,7例如通过CVD形成。 作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。 在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气 扩散被控制。 因此，控制氧扩散，防止漏电流的产生，提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

公开(公告)号：US07135732B2

公开(公告)日：2006-11-14

申请号：US10479703

申请日：2002-06-04

Applicant: Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

Inventor： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L27/108

CPC classification number: H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L27/10814 ,  H01L28/40 ,  H01L28/60 ,  H01L29/513

Abstract: In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.

Abstract translation: 为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极 并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。 或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

公开(公告)号：US06940118B2

公开(公告)日：2005-09-06

申请号：US10299197

申请日：2002-11-18

Applicant: Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

Inventor： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC classification number: H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10873 ,  H01L28/56 ,  H01L28/57 ,  H01L29/4975 ,  H01L29/513

Abstract: A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.

Abstract translation: 半导体器件具有由氧化锆或氧化铪形成的栅极电介质膜和与硅衬底的一个主表面侧的栅极电介质膜接触的栅电极膜。 栅极电介质膜含有防止氧扩散的添加元素。

公开(公告)号：US06927435B2

公开(公告)日：2005-08-09

申请号：US10043099

申请日：2002-01-14

Applicant: Hiroshi Moriya ,  Tomio Iwasaki ,  Hideo Miura ,  Shuji Ikeda

Inventor： Hiroshi Moriya ,  Tomio Iwasaki ,  Hideo Miura ,  Shuji Ikeda

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/76 ,  H01L21/336 ,  H01L27/108

CPC classification number: H01L21/823462 ,  H01L21/823456

Abstract: A semiconductor device comprising a semiconductor substrate, gate insulators formed on the substrate, and gate electrodes formed on the gate insulators, the gate insulators which are mainly composed of a material selected from titanium oxide, zirconium oxide and hafnium oxide, and in which compressive strain is produced and equipped with MOS transistors, can suppress leakage current flowing through the gate insulators and has high reliability.

Abstract translation: 一种半导体器件，包括半导体衬底，形成在衬底上的栅极绝缘体和形成在栅极绝缘体上的栅极电极，主要由选自氧化钛，氧化锆和氧化铪的材料组成的栅极绝缘体，并且其中压缩应变 制造并配备有MOS晶体管，可以抑制流过栅极绝缘体的漏电流并具有高可靠性。

公开(公告)号：US07084477B2

公开(公告)日：2006-08-01

申请号：US10600771

申请日：2003-06-23

Applicant: Norio Ishitsuka ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Masahito Takahashi ,  Norio Suzuki ,  Shuji Ikeda ,  Hideki Tanaka ,  Hiroyuki Mima

Inventor： Norio Ishitsuka ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Masahito Takahashi ,  Norio Suzuki ,  Shuji Ikeda ,  Hideki Tanaka ,  Hiroyuki Mima

IPC: H01L29/00

CPC classification number: H01L27/11526 ,  H01L21/28123 ,  H01L21/76224 ,  H01L21/823481 ,  H01L27/105 ,  H01L27/11546

Abstract: To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.

Abstract translation: 为了抑制在半导体衬底中发生的缺陷，半导体器件通过具有：半导体衬底; 具有形成在所述半导体衬底中的沟槽的元件隔离区域和嵌入所述沟槽中的嵌入绝缘膜; 形成在元件隔离区域附近形成的有源区，其中形成栅极绝缘膜并在栅极绝缘膜上形成栅电极; 以及形成为使得栅电极的至少一部分位于元件隔离区域上的区域，以及在栅电极为第一元件隔离区域的嵌入绝缘膜的上侧的第一边缘表面 定位在位于绝缘膜的第二边缘表面上方的第二元件隔离区域中，栅极电极膜未被定位。