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公开(公告)号：US10428425B2
公开(公告)日：2019-10-01
申请号：US15413600
申请日：2017-01-24
IPC分类号： C23C16/40 , B23B31/11 , G06K5/00 , B25B13/46 , B25B27/00 , C23C16/458 , C23C16/455
摘要： A film deposition apparatus for sequentially supplying reaction gases, which mutually react, into a chamber to deposit a film on a substrate includes a turntable rotatable and including a concave portion on an upper surface, a bottom portion of the concave portion having a through hole, a substrate supporting member attachable to and detachable from the concave portion, an upper surface of the substrate supporting member mounting the substrate, a lower surface of the substrate supporting member having a first protruding portion, a drive mechanism moving up and down the turntable and revolving the turntable, a lid member located lower than the turntable, an upper surface of the lid member having a second protruding portion, and a control unit revolving the turntable to cause the first protruding portion to contact the second protruding portion and cause the substrate supporting member to be spun a predetermined angle relative to the turntable.
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公开(公告)号：US10002417B2
公开(公告)日：2018-06-19
申请号：US14281989
申请日：2014-05-20
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： A ready for rotation state detection device is configured to detect a state in which a substrate, which is placed on a concave portion formed in a surface of a turntable, will not fly out of the concave portion when the turntable is rotated in a chamber. The ready for rotation state detection device includes a ready for rotation state detection unit configured to detect that a height of a surface of an end of the substrate is equal to or lower than a predetermined value indicating that the turntable is rotatable, upon receiving the substrate on the concave portion.
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3.发明授权公开(公告)号：US08565911B2
公开(公告)日：2013-10-22
申请号：US13804452
申请日：2013-03-14
发明人： Yo Abe , Kiichi Takahashi , Junya Sato , Yoshinobu Motodate
IPC分类号： G06F7/00
CPC分类号： H01L21/67098 , H01L21/67109 , H01L21/67766 , H01L21/67781
摘要： When a substrate is transferred by a holding arm to a multiple tier wafer boat, contact between the holding arm and the substrate is prevented. When the wafer boat is not subjected to a thermal effect, a normal height position of a ring member is obtained by relatively elevating and lowering a transfer base member with respect to the wafer boat. Before a wafer, which is not yet thermally processed, is transferred to the wafer boat, a height position of the corresponding ring member is obtained. By comparing a difference between the normal height position of the ring member and the height position of the ring member before the wafer is transported, with a threshold value, whether to transfer the wafer by the wafer transfer mechanism to the wafer boat can be judged.
摘要翻译： 当基板被保持臂转移到多层晶片舟皿时，防止了保持臂和基板之间的接触。 当晶片舟不受热效应时，通过相对于晶片舟相对地升高和降低转印基底构件，获得环形构件的正常高度位置。 在尚未热处理的晶片被转移到晶片舟皿之前，获得相应的环件的高度位置。 通过比较环状构件的正常高度位置与晶片运送前环状构件的高度位置之间的差异，可以判断是否通过晶片传送机构将晶片转移到晶片舟皿上。
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公开(公告)号：US10294565B2
公开(公告)日：2019-05-21
申请号：US15296588
申请日：2016-10-18
发明人： Kiichi Takahashi , Yuya Sasaki , Kosuke Takahashi
IPC分类号： C23C16/455
摘要： A substrate processing apparatus includes a first hole portion formed through a sidewall of the process chamber and horizontally extending outward and a second hole portion formed to be contiguous with the first hole portion and defining a supply channel for a process gas. The apparatus also includes a gas nozzle, a plurality of seal members and an annular spacer. A proximal end of the gas nozzle is inserted into the first hole portion. The plurality of seal members is spaced apart from each other between an outer circumferential surface of the gas nozzle and the first hole portion. The annular spacer is inserted into the first hole portion and is pressed against an annular surface of an opening periphery of the second hole portion by the gas nozzle in a state where the proximal end of the gas nozzle is engaged with the annular spacer.
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公开(公告)号：US10549305B2
公开(公告)日：2020-02-04
申请号：US15685375
申请日：2017-08-24
发明人： Yuya Sasaki , Kiichi Takahashi , Yasushi Takeuchi
IPC分类号： B05B15/60 , B05B15/62 , C23C16/455 , B05B1/20 , B05B1/00
摘要： A support structure for a suspended injector includes a suspended injector having a tubular vertical portion extending in a vertical direction, one or more chamfered portions formed by chamfering an outer peripheral surface near an upper end of the tubular vertical portion, a pair of holding members each having a flat surface formed on an inner peripheral surface of each of the pair of holding members to engage with each of the chamfered portions, each of the pair of holding members holding the tubular vertical portion of the suspended injector by sandwiching the tubular vertical portion of the suspended injector from both sides each of the pair of holding members, and a support structure part configured to fixedly support the pair of holding members, and configured to suspend and support the suspended injector.
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公开(公告)号：US09349589B2
公开(公告)日：2016-05-24
申请号：US14591245
申请日：2015-01-07
IPC分类号： H01L21/02 , C23C16/458 , C23C16/44 , C23C16/455 , H01L21/677 , H01L21/687
CPC分类号： H01L21/0228 , C23C16/4412 , C23C16/45551 , C23C16/4584 , H01L21/67748 , H01L21/68742 , H01L21/68764 , H01L21/68771
摘要： A vacuum processing apparatus is configured to include a process chamber, a turntable provided in the process chamber, and a substrate receiving area provided in one surface of the turntable and including a regulation part formed therearound to regulate a position of a substrate. A transfer mechanism is provided outside the process chamber, and a lifting member is configured to support the substrate and to move up and down in order to transfer the substrate between the transfer mechanism and the turntable. An exhaust mechanism is configured to selectively evacuate a gap between the substrate receiving area and the substrate before the lifting member places the substrate on the substrate receiving area.
摘要翻译： 真空处理装置被配置为包括处理室，设置在处理室中的转台和设置在转台的一个表面中的基板接收区域，并且包括在其周围形成的调节部分以调节基板的位置。 传送机构设置在处理室外部，并且提升构件被构造成支撑基板并且上下移动，以便在传送机构和转台之间传送基板。 排气机构构造成在提升构件将基板放置在基板接收区域之前选择性地排空基板接收区域和基板之间的间隙。
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