摘要:
The present invention provides a spray deposition system which comprises a syringe attachment device having a specific adaptor. The adaptor has at least three openings being in fluid connection with each other, wherein at least one first opening of the adaptor is connectable to a needle in a liquid-tight manner, at least one second opening of the adaptor is in fluid connection with surrounding air and at least one third opening of the adaptor is connected to a tube configured to deliver an air flow in a reversible and air-tight manner. Thereby, a connection to a needle is possible in a reversible and liquid-tight manner without having to pierce the tube of the system like in prior art solutions. This provokes that no tube material may clog the needle and no air may leak from the tube. Furthermore, an attachment of the needle to the spray deposition system may be performed faster and safer and alignment of the needle is facilitated. Finally, dulled needles may be employed which ensure a more homogeneous deposition of liquid from the needle.
摘要:
A bond pad structure has a first conductive layer and an anti-reflective coating layer disposed on the first conductive layer. The first conductive layer includes first and second portions (which could be formed by etching). Part of the first portion is exposed within a bond pad opening, and the second portion is electrically connected to an integrated circuit. The anti-reflective coating layer also includes first and second portions (which could be formed by etching). The first portion may be located near the bond pad opening, and the second portion may be located farther away from the bond pad opening. A second conductive layer electrically connects the first and second portions of the first conductive layer. In this way, the first portion of the anti-reflective coating layer may undergo oxidation without leading to oxidation of the second portion of the anti-reflective coating layer.
摘要:
A method is disclosed for applying a plasma etch process to facet a masking layer in a semiconductor device by creating sloped surfaces in the masking layer. The masking layer is plasma etched with a plasma that has a high sputter etch component. The plasma etch process removes material from vertical edges of the masking layer to form a sloped surface at each vertical edge of the masking layer. A layer of conductive material is then applied to the masking layer. When the layer of conductive material is subsequently removed by an overetch process the sloped profile of the masking layer facilitates the removal of stringers of conductive material without using an excessively lengthy overetch.
摘要:
A bond pad structure has a first conductive layer and an anti-reflective coating layer disposed on the first conductive layer. The first conductive layer includes first and second portions (which could be formed by etching). Part of the first portion is exposed within a bond pad opening, and the second portion is electrically connected to an integrated circuit. The anti-reflective coating layer also includes first and second portions (which could be formed by etching). The first portion may be located near the bond pad opening, and the second portion may be located farther away from the bond pad opening. A second conductive layer electrically connects the first and second portions of the first conductive layer. In this way, the first portion of the anti-reflective coating layer may undergo oxidation without leading to oxidation of the second portion of the anti-reflective coating layer.