SPRAY DEPOSITION SYSTEM AND ITS USE FOR TREATING A LIVING BEING

    公开(公告)号:US20210077799A1

    公开(公告)日:2021-03-18

    申请号:US15733749

    申请日:2018-03-21

    摘要: The present invention provides a spray deposition system which comprises a syringe attachment device having a specific adaptor. The adaptor has at least three openings being in fluid connection with each other, wherein at least one first opening of the adaptor is connectable to a needle in a liquid-tight manner, at least one second opening of the adaptor is in fluid connection with surrounding air and at least one third opening of the adaptor is connected to a tube configured to deliver an air flow in a reversible and air-tight manner. Thereby, a connection to a needle is possible in a reversible and liquid-tight manner without having to pierce the tube of the system like in prior art solutions. This provokes that no tube material may clog the needle and no air may leak from the tube. Furthermore, an attachment of the needle to the spray deposition system may be performed faster and safer and alignment of the needle is facilitated. Finally, dulled needles may be employed which ensure a more homogeneous deposition of liquid from the needle.

    System and method for faceting a masking layer in a plasma etch to slope a feature edge
    3.
    发明授权
    System and method for faceting a masking layer in a plasma etch to slope a feature edge 有权
    在等离子体蚀刻中刻蚀掩模层以使特征边缘倾斜的系统和方法

    公开(公告)号:US07585775B1

    公开(公告)日:2009-09-08

    申请号:US11285702

    申请日:2005-11-21

    IPC分类号: H01L21/302 H01L21/461

    CPC分类号: H01L21/32136

    摘要: A method is disclosed for applying a plasma etch process to facet a masking layer in a semiconductor device by creating sloped surfaces in the masking layer. The masking layer is plasma etched with a plasma that has a high sputter etch component. The plasma etch process removes material from vertical edges of the masking layer to form a sloped surface at each vertical edge of the masking layer. A layer of conductive material is then applied to the masking layer. When the layer of conductive material is subsequently removed by an overetch process the sloped profile of the masking layer facilitates the removal of stringers of conductive material without using an excessively lengthy overetch.

    摘要翻译: 公开了一种用于施加等离子体蚀刻工艺以通过在掩模层中产生倾斜表面来在半导体器件中刻蚀掩模层的方法。 用等离子体对具有高溅射蚀刻成分的等离子体进行等离子体蚀刻。 等离子体蚀刻工艺从掩模层的垂直边缘去除材料,以在掩模层的每个垂直边缘处形成倾斜表面。 然后将一层导电材料施加到掩蔽层。 当导电材料层随后通过过蚀刻工艺去除时,掩模层的倾斜轮廓有助于去除导电材料的桁条,而不使用过长的过蚀刻。