公开(公告)号：US08497377B2

公开(公告)日：2013-07-30

申请号：US12442680

申请日：2007-10-07

Applicant: Thomas Adam ,  Ralf Wischnat ,  Klaus Weidemann

Inventor： Thomas Adam ,  Ralf Wischnat ,  Klaus Weidemann

IPC: C07D471/02

CPC classification number: C07D471/04

Abstract: The invention relates to an improved process for preparing pradofloxacin, in which the substituent in the 7 position is introduced by nucleophilic substitution in an N-methylpyrrolidone-ethanol solvent mixture.

Abstract translation: 本发明涉及一种制备普拉多沙星的改进方法，其中通过在N-甲基吡咯烷酮 - 乙醇溶剂混合物中的亲核取代引入7位上的取代基。

公开(公告)号：US20090318700A1

公开(公告)日：2009-12-24

申请号：US12442680

申请日：2007-10-07

Applicant: Thomas Adam ,  Ralf Wischnat ,  Klaus Weidemann

Inventor： Thomas Adam ,  Ralf Wischnat ,  Klaus Weidemann

IPC: C07D471/04

CPC classification number: C07D471/04

Abstract: The invention relates to an improved process for preparing pradofloxacin, in which the substituent in the 7 position is introduced by nucleophilic substitution in an N-methylpyrrolidone-ethanol solvent mixture.

Abstract translation: 本发明涉及一种制备普拉多沙星的改进方法，其中通过在N-甲基吡咯烷酮 - 乙醇溶剂混合物中的亲核取代引入7位上的取代基。

公开(公告)号：US20090080559A1

公开(公告)日：2009-03-26

申请号：US11919957

申请日：2005-05-11

Applicant: Michael Armbruster ,  Thomas Adam

Inventor： Michael Armbruster ,  Thomas Adam

IPC: H04L1/02

CPC classification number: H04B7/0808

Abstract: The invention relates to an antenna diversity in which high-frequency signals (HF signals) received via a plurality of antennas are fed to a respective tuner (1, 3). The invention is characterized in that the intermediate frequency output signals (IF signals) of the tuners (1, 3) are fed to a connect-through device (5) that connects one IF signal each through to one subsequent demodulator (6).

Abstract translation: 本发明涉及一种天线分集，其中经由多个天线接收的高频信号（HF信号）被馈送到相应的调谐器（1,3）。 本发明的特征在于，调谐器（1,3）的中频输出信号（IF信号）被馈送到连接器件（5），每个连接器件将一个IF信号连接到一个后续的解调器（6）。

公开(公告)号：US20070126080A1

公开(公告)日：2007-06-07

申请号：US11164757

申请日：2005-12-05

Applicant: Thomas Wallner ,  Thomas Adam ,  Stephen Bedell ,  Joel De Souza

Inventor： Thomas Wallner ,  Thomas Adam ,  Stephen Bedell ,  Joel De Souza

IPC: H01L27/082

CPC classification number: H01L29/732 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7378

Abstract: The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends between the first STI region and the collection region and undercuts a portion of the active base region with an undercut angle of not more than about 90°. For example, the second STI region may a substantially triangular cross-section with an undercut angle of less than about 90°, or a substantially rectangular cross-section with an undercut angle of about 90°. Such a second STI region can be fabricated using a porous surface section formed in an upper surface of the collector region.

Abstract translation: 本发明涉及双极结型晶体管（BJTS）。 每个BJT的集电极区域位于半导体衬底表面中并且邻近第一浅沟槽隔离（STI）区域。 提供了第二STI区域，其在第一STI区域和收集区域之间延伸，并且底切角度不大于约90°的一部分活性基底区域。 例如，第二STI区域可以具有小于约90°的底切角的基本上为三角形的横截面，或者具有约90°的底切角的基本上矩形的横截面。 可以使用形成在集电区域的上表面中的多孔表面部分来制造这样的第二STI区域。

公开(公告)号：US20060003555A1

公开(公告)日：2006-01-05

申请号：US10883887

申请日：2004-07-02

Applicant: Thomas Adam ,  Stephen Bedell ,  Joel de Souza ,  Keith Fogel ,  Alexander Reznicek ,  Devendra Sadana ,  Ghavam Shahidi

Inventor： Thomas Adam ,  Stephen Bedell ,  Joel de Souza ,  Keith Fogel ,  Alexander Reznicek ,  Devendra Sadana ,  Ghavam Shahidi

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  C30B1/00 ,  H01L21/20 ,  H01L21/36

CPC classification number: H01L21/76259 ,  Y10S438/967

Abstract: A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semiconductor layers is a doped and relaxed semiconductor layer underneath a strained semiconductor layer; converting the doped and relaxed semiconductor layer into a porous semiconductor via an electrolytic anodization process, and oxidizing to convert the porous semiconductor layer into a buried oxide layer. The method provides a SSOI substrate that includes a relaxed semiconductor layer on a substrate; a high-quality buried oxide layer on the relaxed semiconductor layer; and a strained semiconductor layer on the high-quality buried oxide layer. In accordance with the present invention, the relaxed semiconductor layer and the strained semiconductor layer have identical crystallographic orientations.

公开(公告)号：US20050212027A1

公开(公告)日：2005-09-29

申请号：US10708861

申请日：2004-03-29

Applicant: Thomas Adam ,  David Ahlgren ,  Kangguo Cheng ,  Ramachandra Divakaruni

Inventor： Thomas Adam ,  David Ahlgren ,  Kangguo Cheng ,  Ramachandra Divakaruni

IPC: H01L21/8234 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/94

CPC classification number: H01L27/10876 ,  H01L27/10841 ,  H01L29/945 ,  Y10S438/931

Abstract: A method of forming a trench in a semiconductor substrate includes a step of converting the cross section of the upper portion of the trench from octagonal to rectangular, so that sensitivity to alignment errors between the trench lithography and the active area lithography is reduced. Applications include a vertical transistor that becomes insensitive to misalignment between the trench and the litho for the active area, in particular a DRAM cell with a vertical transistor.

Abstract translation: 在半导体衬底中形成沟槽的方法包括将沟槽的上部的横截面从八边形转换为矩形的步骤，从而减小了沟槽光刻和有源区光刻之间对准误差的敏感性。 应用包括对于有源区域，特别是具有垂直晶体管的DRAM单元对沟槽和光刻层之间的未对准变得不敏感的垂直晶体管。

公开(公告)号：US20090098849A1

公开(公告)日：2009-04-16

申请号：US11990611

申请日：2006-08-15

Applicant: Thomas Adam ,  Wolfgang Sautter ,  Christian Schwarz ,  Robert Thomas

Inventor： Thomas Adam ,  Wolfgang Sautter ,  Christian Schwarz ,  Robert Thomas

IPC: H05K11/02

CPC classification number: H04B1/082

Abstract: The invention relates to a receiver device for the mobile reception of high-frequency signals of different services in motor vehicles comprising at least one receiver unit for receiving and processing country specific services and a communications unit for connecting the receiver device to the motor vehicle communications bus.

Abstract translation: 本发明涉及一种用于移动接收机动车辆中不同服务的高频信号的接收机装置，包括用于接收和处理国家特定服务的至少一个接收机单元和用于将接收机设备连接到机动车辆通信总线 。

公开(公告)号：US20070045775A1

公开(公告)日：2007-03-01

申请号：US11212187

申请日：2005-08-26

Applicant: Thomas Adam ,  Dureseti Chidambarrao

Inventor： Thomas Adam ,  Dureseti Chidambarrao

IPC: H01L29/00

CPC classification number: H01L29/7378 ,  H01L29/161 ,  H01L29/165

Abstract: The present invention relates to a high performance heterojunction bipolar transistor (HBT) having a base region with a SiGe-containing layer therein. The SiGe-containing layer is not more than about 100 nm thick and has a predetermined critical germanium content. The SiGe-containing layer further has an average germanium content of not less than about 80% of the predetermined critical germanium content. The present invention also relates to a method for enhancing carrier mobility in a HBT having a SiGe-containing base layer, by uniformly increasing germanium content in the base layer so that the average germanium content therein is not less than 80% of a critical germanium content, which is calculated based on the thickness of the base layer, provided that the base layer is not more than 100 nm thick.

Abstract translation: 本发明涉及在其中具有含SiGe的层的基极区域的高性能异质结双极晶体管（HBT）。 含SiGe的层的厚度不超过约100nm，具有预定的临界锗含量。 含SiGe的层还具有不小于预定临界锗含量的约80％的平均锗含量。 本发明还涉及通过均匀地提高基底层中的锗含量，使其中的平均锗含量不低于临界锗含量的80％，来提高具有含SiGe的基底层的HBT中的载流子迁移率的方法 ，其基于基底层的厚度计算，条件是基底层不大于100nm厚。

公开(公告)号：US20070164356A1

公开(公告)日：2007-07-19

申请号：US11332564

申请日：2006-01-13

Applicant: Thomas Adam ,  Stephen Bedell ,  Joel de Souza ,  Keith Fogel ,  Alexander Reznicek ,  Devendra Sadana ,  Ghavam Shahidi

Inventor： Thomas Adam ,  Stephen Bedell ,  Joel de Souza ,  Keith Fogel ,  Alexander Reznicek ,  Devendra Sadana ,  Ghavam Shahidi

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L21/76243 ,  H01L29/66772 ,  H01L29/7849 ,  H01L29/78654

Abstract: A strained (tensile or compressive) semiconductor-on-insulator material is provided in which a single semiconductor wafer and a separation by ion implantation of oxygen process are used. The separation by ion implantation of oxygen process, which includes oxygen ion implantation and annealing creates, a buried oxide layer within the material that is located beneath the strained semiconductor layer. In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

Abstract translation: 提供了一种应变（拉伸或压缩）半导体绝缘体材料，其中使用单个半导体晶片和通过氧气工艺的离子注入分离。 通过离子注入氧气工艺的分离，其中包括氧离子注入和退火，产生位于应变半导体层之下的材料内的掩埋氧化物层。 在一些实施例中，渐变半导体缓冲层位于掩埋氧化物层的下方，而在其它掺杂半导体层中，包含掺杂有B或C中的至少一个的掺杂半导体层位于掩埋氧化物层的下方。

公开(公告)号：US20070117572A1

公开(公告)日：2007-05-24

申请号：US11561530

申请日：2006-11-20

Applicant: Thomas Adam ,  Ian Atkinson ,  Michael Dixon

Inventor： Thomas Adam ,  Ian Atkinson ,  Michael Dixon

IPC: H04Q7/20

CPC classification number: G01S5/0294 ,  G01S5/0257 ,  G01S5/12 ,  H04W8/08 ,  H04W60/00 ,  H04W64/00

Abstract: A method for locating and tracking devices in a mobile telephone network compries the steps of (a) receiving mobile telephone control parameters in a subscriber database; and (b) using one or more location parameter databases (LPDBs), each mapping control parameters to a geographic location and returning a location result when queried. One or more filters is applied to the control parameters that is received by the subscriber database, each filter selectively initiating processing using a LPDB appropriate to the task of the filter and to the current state of the device.

Abstract translation: 一种用于在移动电话网络中定位和跟踪设备的方法，包括以下步骤：（a）在用户数据库中接收移动电话控制参数; 和（b）使用一个或多个位置参数数据库（LPDB），每个映射控制参数到地理位置并在查询时返回位置结果。 一个或多个过滤器被应用于由用户数据库接收的控制参数，每个过滤器使用适合于过滤器的任务的LPDB和设备的当前状态来选择性地启动处理。