公开(公告)号：US20220028989A1

公开(公告)日：2022-01-27

申请号：US17303809

申请日：2021-06-08

申请人： The Boeing Company

发明人： Kangmu Min Lee ,  Maxwell Daehan Choi ,  Jeffrey Alden Wright ,  Wonill Ha ,  Clayton Jackson ,  Michael Pemberton Jura ,  Adele Schmitz ,  James Chappell

IPC分类号： H01L29/417 ,  H01L21/762 ,  H01L29/40 ,  H01L21/265 ,  H01L21/04

摘要： A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures. A contact is formed in the cavity. The contact is on the doped region and in direct contact with the doped region.

公开(公告)号：US12040366B2

公开(公告)日：2024-07-16

申请号：US17303809

申请日：2021-06-08

申请人： The Boeing Company

发明人： Kangmu Min Lee ,  Maxwell Daehan Choi ,  Jeffrey Alden Wright ,  Wonill Ha ,  Clayton Jackson ,  Michael Pemberton Jura ,  Adele Schmitz ,  James Chappell

IPC分类号： H01L29/06 ,  H01L21/04 ,  H01L21/265 ,  H01L21/762 ,  H01L29/40 ,  H01L29/417 ,  H01L21/266 ,  H01L29/08 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/41766 ,  H01L21/0465 ,  H01L21/2652 ,  H01L21/26553 ,  H01L21/76232 ,  H01L29/401 ,  H01L21/266 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

摘要： A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures. A contact is formed in the cavity. The contact is on the doped region and in direct contact with the doped region.