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    Method for fabricating capacitor device
    2.
    发明授权
    Method for fabricating capacitor device 失效
    制造电容器装置的方法

    公开(公告)号：US07157348B2

    公开(公告)日：2007-01-02

    申请号：US10341252

    申请日：2003-01-14

    Applicant: Takumi Mikawa ,  Yuji Judai ,  Atsushi Noma

    Inventor： Takumi Mikawa ,  Yuji Judai ,  Atsushi Noma

    IPC: H01L21/20

    CPC classification number: H01L28/55

    Abstract: After a capacitor device including a lower electrode, a capacitor dielectric film made from a ferroelectric film and an upper electrode is formed on a substrate, an insulating film covering the capacitor device is formed. Subsequently, the capacitor device covered with the insulating film is annealed for crystallizing the ferroelectric film.

    Abstract translation: 在包括下电极的电容器器件，由铁电体膜制成的电容器电介质膜和上电极形成在衬底上之后，形成覆盖电容器器件的绝缘膜。 随后，用绝缘膜覆盖的电容器器件进行退火以使铁电体膜结晶。

    Semiconductor device and method for fabricating the same
    3.
    发明申请
    Semiconductor device and method for fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20060124983A1

    公开(公告)日：2006-06-15

    申请号：US11346207

    申请日：2006-02-03

    Applicant: Toshie Kutsunai ,  Takumi Mikawa ,  Yuji Judai

    Inventor： Toshie Kutsunai ,  Takumi Mikawa ,  Yuji Judai

    IPC: H01L21/8242 ,  H01L29/94

    CPC classification number: H01L27/11507 ,  H01L21/28568 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

    Abstract: A semiconductor device has contact plugs each for electrically connecting a capacitor element to the source/drain region of a transistor, conductive layers formed on the contact plugs and made of titanium nitride which is a nitride only of a refractory metal, and polycrystalline conductive oxygen barrier layers each composed of a multilayer structure consisting of a titanium aluminum nitride film, an iridium film, and an iridium oxide film to prevent the diffusion of oxygen. Since the conductive layers made of titanium nitride which is low in crystal orientation is provided under the oxygen barrier films, the titanium aluminum nitride films formed as the oxygen barrier films directly on the conductive layers have a compact film structure so that the penetration of oxygen is prevented effectively.

    Abstract translation: 半导体器件具有用于将电容器元件电连接到晶体管的源极/漏极区域的接触插塞，形成在接触插塞上的导电层和仅由耐火金属制成的氮化钛制成的多晶导电氧气阻挡层 各层由由氮化铝钛膜，铱膜和氧化铱膜构成的多层结构构成，以防止氧的扩散。 由于在氧阻隔膜下面设置由结晶取向低的氮化钛制成的导体层，所以直接在导电层上形成为氧阻隔膜的氮化铝钛膜具有致密的膜结构，使得氧的渗透为 有效防范。

    Memory device with hydrogen-blocked ferroelectric capacitor
    5.
    发明授权
    Memory device with hydrogen-blocked ferroelectric capacitor 有权
    具有氢阻塞铁电电容器的存储器件

    公开(公告)号：US07060552B2

    公开(公告)日：2006-06-13

    申请号：US10843435

    申请日：2004-05-12

    Applicant: Takumi Mikawa ,  Toshie Kutsunai ,  Yuji Judai

    Inventor： Takumi Mikawa ,  Toshie Kutsunai ,  Yuji Judai

    IPC: H01L21/8242

    CPC classification number: H01L27/11502 ,  H01L27/10894 ,  H01L27/11507 ,  H01L28/55

    Abstract: A semiconductor memory device of the present invention includes: a semiconductor substrate; a memory cell capacitor for storing data, including a first electrode provided above the semiconductor substrate, a capacitance insulating film formed on the first electrode, and a second electrode provided on the capacitance insulating film; a step reducing film covering an upper surface and a side surface of the memory cell capacitor; and an overlying hydrogen barrier film covering the step reducing film.

    Abstract translation: 本发明的半导体存储器件包括：半导体衬底; 用于存储数据的存储单元电容器，包括设置在半导体衬底上的第一电极，形成在第一电极上的电容绝缘膜和设置在电容绝缘膜上的第二电极; 覆盖所述存储单元电容器的上表面和侧面的阶梯降低膜; 以及覆盖降低层的覆盖氢阻挡膜。

    Semiconductor device and method for fabricating the same
    6.
    发明申请
    Semiconductor device and method for fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US20050285170A1

    公开(公告)日：2005-12-29

    申请号：US11101645

    申请日：2005-04-08

    Applicant: Takumi Mikawa ,  Yuji Judai

    Inventor： Takumi Mikawa ,  Yuji Judai

    IPC: H01L27/105 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108 ,  H01L27/115 ,  H01L29/76

    CPC classification number: H01L27/11502 ,  H01L21/76895 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10894 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

    Abstract: A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower electrode made of a first metal film formed on the wall and bottom of the first opening and electrically connected to the upper end of the first plug, a capacitive dielectric film made of a ferroelectric film formed on the lower electrode, and an upper electrode made of a second metal film formed on the capacitive dielectric film. The second conductive layer and the upper electrode are electrically connected to each other in the first and second insulating films.

    Abstract translation: 半导体器件包括：第一和第二导电层; 第一绝缘膜; 第一个插头 第二绝缘膜; 第一个开口 以及电容器，其由形成在所述第一开口的壁和所述第一开口的底部上的由第一金属膜制成的下电极构成，并且电连接到所述第一插塞的上端;电容电介质膜，其由在所述下电极上形成的铁电体膜 以及由形成在电容绝缘膜上的第二金属膜构成的上电极。 第二导电层和上电极在第一和第二绝缘膜中彼此电连接。

    Capacitance structure for preventing degradation of the insulating film
    8.
    发明授权
    Capacitance structure for preventing degradation of the insulating film 失效
    用于防止绝缘膜退化的电容结构

    公开(公告)号：US6166424A

    公开(公告)日：2000-12-26

    申请号：US109032

    申请日：1998-07-02

    Applicant: Takumi Mikawa ,  Yuji Judai ,  Yoshihisa Nagano

    Inventor： Takumi Mikawa ,  Yuji Judai ,  Yoshihisa Nagano

    IPC: H01L21/02 ,  H01L29/41

    CPC classification number: H01L28/55 ,  H01L28/60 ,  Y10S438/957

    Abstract: On a substrate, there are provided a lower electrode, a capacitance insulating film, a passivation insulating film, and a first partial film of an upper electrode to be filled in a second aperture (capacitance determining aperture) formed in the passivation insulating film. The lower electrode, the capacitance insulating film, and the first partial film constitute a capacitance element. The upper electrode has the first partial film which is in contact with the capacitance insulating film and a second partial film which is not in contact with the capacitance insulating film. Since a second electrode wire consisting of a lower-layer film composed of titanium and an upper-layer film composed of an aluminum alloy film is in contact with the second partial film distinct from the first partial film of the upper electrode, titanium or the like encroaching from the second electrode wire can be prevented from diffusing into the capacitance insulating film.

    Abstract translation: 在基板上，设置有被填充在形成在钝化绝缘膜中的第二孔（电容确定孔）中的下电极，电容绝缘膜，钝化绝缘膜和上电极的第一部分膜。 下电极，电容绝缘膜和第一部分膜构成电容元件。 上电极具有与电容绝缘膜接触的第一部分膜和不与电容绝缘膜接触的第二部分膜。 由于由钛构成的下层膜和由铝合金膜构成的上层膜构成的第2电极线与上部电极的第1部分膜不同的第2部分膜接触，钛等 可以防止从第二电极线的侵入扩散到电容绝缘膜。

    Ferroelectric memory device
    9.
    发明授权
    Ferroelectric memory device 失效
    铁电存储器件

    公开(公告)号：US07598556B2

    公开(公告)日：2009-10-06

    申请号：US11101645

    申请日：2005-04-08

    Applicant: Takumi Mikawa ,  Yuji Judai

    Inventor： Takumi Mikawa ,  Yuji Judai

    IPC: G11C11/22

    CPC classification number: H01L27/11502 ,  H01L21/76895 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10894 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

    Abstract: A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower electrode made of a first metal film formed on the wall and bottom of the first opening and electrically connected to the upper end of the first plug, a capacitive dielectric film made of a ferroelectric film formed on the lower electrode, and an upper electrode made of a second metal film formed on the capacitive dielectric film. The second conductive layer and the upper electrode are electrically connected to each other in the first and second insulating films.

    Abstract translation: 半导体器件包括：第一和第二导电层; 第一绝缘膜; 第一个插头 第二绝缘膜; 第一个开口 以及电容器，其由形成在所述第一开口的壁和所述第一开口的底部上的由第一金属膜制成的下电极构成，并且电连接到所述第一插塞的上端;电容电介质膜，其由在所述下电极上形成的铁电体膜 以及由形成在电容绝缘膜上的第二金属膜构成的上电极。 第二导电层和上电极在第一和第二绝缘膜中彼此电连接。

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