Invention Application
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11101645Application Date: 2005-04-08
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Publication No.: US20050285170A1Publication Date: 2005-12-29
- Inventor: Takumi Mikawa , Yuji Judai
- Applicant: Takumi Mikawa , Yuji Judai
- Priority: JPJP2004-078229 20040318
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L21/02 ; H01L21/768 ; H01L21/8242 ; H01L21/8246 ; H01L27/108 ; H01L27/115 ; H01L29/76
Abstract:
A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower electrode made of a first metal film formed on the wall and bottom of the first opening and electrically connected to the upper end of the first plug, a capacitive dielectric film made of a ferroelectric film formed on the lower electrode, and an upper electrode made of a second metal film formed on the capacitive dielectric film. The second conductive layer and the upper electrode are electrically connected to each other in the first and second insulating films.
Public/Granted literature
- US07598556B2 Ferroelectric memory device Public/Granted day:2009-10-06
Information query
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