Invention Grant
- Patent Title: Capacitance structure for preventing degradation of the insulating film
- Patent Title (中): 用于防止绝缘膜退化的电容结构
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Application No.: US109032Application Date: 1998-07-02
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Publication No.: US6166424APublication Date: 2000-12-26
- Inventor: Takumi Mikawa , Yuji Judai , Yoshihisa Nagano
- Applicant: Takumi Mikawa , Yuji Judai , Yoshihisa Nagano
- Applicant Address: JPX Osaka
- Assignee: Matsushita Electronics Corporation
- Current Assignee: Matsushita Electronics Corporation
- Current Assignee Address: JPX Osaka
- Priority: JPX9-178133 19970703
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/41
Abstract:
On a substrate, there are provided a lower electrode, a capacitance insulating film, a passivation insulating film, and a first partial film of an upper electrode to be filled in a second aperture (capacitance determining aperture) formed in the passivation insulating film. The lower electrode, the capacitance insulating film, and the first partial film constitute a capacitance element. The upper electrode has the first partial film which is in contact with the capacitance insulating film and a second partial film which is not in contact with the capacitance insulating film. Since a second electrode wire consisting of a lower-layer film composed of titanium and an upper-layer film composed of an aluminum alloy film is in contact with the second partial film distinct from the first partial film of the upper electrode, titanium or the like encroaching from the second electrode wire can be prevented from diffusing into the capacitance insulating film.
Public/Granted literature
- US4396659A Magnetic recording medium Public/Granted day:1983-08-02
Information query
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