公开(公告)号：US20090004607A1

公开(公告)日：2009-01-01

申请号：US11658448

申请日：2005-07-29

Applicant: Takeshi Shimoaoki ,  Hideharu Kyouda ,  Takafumi Niwa

Inventor： Takeshi Shimoaoki ,  Hideharu Kyouda ,  Takafumi Niwa

IPC: G03F7/20

CPC classification number: G03F7/70925 ,  G03F7/70341 ,  G03F7/70916

Abstract: A resist film is formed on a surface of a wafer. Then, a liquid layer used for irradiating the resist film with exposure light rays is formed from a liquid between an optical component facing the resist film and the surface of the wafer. The liquid is capable of transmitting the exposure light rays and has a function of cleaning a surface of the wafer and a surface of the optical component. Then, the resist film is irradiated with the exposure light rays projected from the optical component and transmitted through the liquid layer, to perform light exposure with a predetermined pattern on the resist film. Then, development is performed on the wafer after the light exposure, to form a predetermined pattern on the wafer.

Abstract translation: 在晶片的表面上形成抗蚀剂膜。 然后，从面向抗蚀剂膜的光学部件和晶片的表面之间的液体形成用于用曝光光线照射抗蚀剂膜的液体层。 液体能够透射曝光光线，并且具有清洁晶片的表面和光学部件的表面的功能。 然后，用从光学部件突出的透射光束照射抗蚀剂膜，透过液体层，在抗蚀剂膜上进行规定图案的曝光。 然后，在曝光后在晶片上进行显影，以在晶片上形成预定图案。

公开(公告)号：US20120218531A1

公开(公告)日：2012-08-30

申请号：US13397043

申请日：2012-02-15

Applicant: Kouichi Hontake ,  Takafumi Niwa ,  Hideharu Kyouda ,  Kousuke Yoshihara

Inventor： Kouichi Hontake ,  Takafumi Niwa ,  Hideharu Kyouda ,  Kousuke Yoshihara

IPC: G03B27/32

CPC classification number: G03F7/40 ,  G03F7/3021 ,  G03F7/325

Abstract: Provided are a developing method and a developing apparatus that can reduce process time and improve throughput in a developing process using a developer containing organic solvent. The present invention relates to a developing method for performing developing by supplying a developer containing organic solvent to a substrate having its surface coated with a resist and exposed. The developing method of the invention includes a liquid film forming step for forming a liquid film by supplying the developer from a developer supply nozzle to a central portion of the substrate while rotating the substrate, and a developing step for developing the resist film on the substrate while rotating the substrate in a state where the supply of the developer from the developer supply nozzle to the substrate is stopped and in such a manner that the liquid film of the developer would not dry.

Abstract translation: 提供一种显影方法和显影装置，其可以使用含有有机溶剂的显影剂在显影过程中缩短处理时间并提高生产量。 本发明涉及通过将含有有机溶剂的显影剂供给到其表面被抗蚀剂涂布并暴露的基材来进行显影的显影方法。 本发明的显影方法包括：液体成膜步骤，用于通过在显影剂供应喷嘴中将显影剂供给到基板的中心部分同时旋转基板来形成液膜;以及显影步骤，用于在基板上显影抗蚀剂膜 同时在显影剂从显影剂供给喷嘴供给到基板停止的状态下以使得显影剂的液膜不会干燥的方式旋转基板。

公开(公告)号：US08110325B2

公开(公告)日：2012-02-07

申请号：US13022811

申请日：2011-02-08

Applicant: Takafumi Niwa ,  Hiroshi Nakamura ,  Hideharu Kyouda

Inventor： Takafumi Niwa ,  Hiroshi Nakamura ,  Hideharu Kyouda

IPC: G03F9/00 ,  G03C5/00

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  H01L21/67178 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate treatment method including a first treatment process (S13 to S16) for exposing, heating, and developing a substrate on which a first resist is formed, thereby forming a first resist pattern, and a second treatment process (S17 to S20) for forming a second resist film on the substrate on which the first resist pattern is formed, exposing, heating, and developing the substrate on which the second resist film is formed, thereby forming a second resist pattern. Also, the substrate treatment method compensates a first treatment condition in a first treatment process (S22 to S25) based on a measured value of a line width of the second resist pattern and a second treatment condition in a second treatment process (S26 to S29) based on a measured value of a line width of the first resist pattern.

Abstract translation: 一种基板处理方法，包括：第一处理工艺（S13至S16），用于对形成第一抗蚀剂的基板进行曝光，加热和显影，从而形成第一抗蚀剂图案;以及第二处理工艺（S17至S20），用于形成 在其上形成第一抗蚀剂图案的基板上的第二抗蚀剂膜，暴露，加热和显影其上形成有第二抗蚀剂膜的基板，从而形成第二抗蚀剂图案。 此外，基板处理方法在第二处理工序中基于第二抗蚀剂图案的线宽度的测量值和第二处理条件在第一处理工艺（S22至S25）中补偿第一处理条件（S26至S29） 基于第一抗蚀剂图案的线宽的测量值。

公开(公告)号：US07601933B2

公开(公告)日：2009-10-13

申请号：US10550284

申请日：2004-03-26

Applicant: Kousuke Yoshihara ,  Yuichi Terashita ,  Momoko Shizukuishi ,  Atsushi Ookouchi ,  Hideharu Kyouda

Inventor： Kousuke Yoshihara ,  Yuichi Terashita ,  Momoko Shizukuishi ,  Atsushi Ookouchi ,  Hideharu Kyouda

IPC: H05B3/68 ,  F26B19/00 ,  C23C16/00

CPC classification number: H01L21/67248 ,  F27D19/00 ,  G03F7/168 ,  H01L21/67109

Abstract: A heat processing device that bakes a substrate having a resist coating film containing a volatile substance, includes a hot plate 2, a hot plate temperature control unit 3, a box member 1a, 5, 32 that defines a heat space 30 and a fluid space 31, air supply unit 18, 18A and suction unit 10, 10A that create an air current flowing in a horizontal direction in the fluid space 31, and a controller 22, 22A that controls the hot plate temperature control unit 3, the air supply unit 18, 18A, suction unit 10, 10A and the gas temperature control unit 19 so that a relationship of TF

Abstract translation: 烘焙具有含有挥发性物质的抗蚀剂涂膜的基板的热处理装置包括热板2，热板温度控制单元3，限定加热空间30的箱体1a，5,32和流体空间 31，空气供给单元18,18A以及在流体空间31中产生沿水平方向流动的气流的吸引单元10,10A以及控制热板温度控制单元3的控制器22,2A，供气单元 18，18A，抽吸单元10,10A和气体温度控制单元19，使得在TP表示热板的温度时，满足TF

公开(公告)号：US20090130614A1

公开(公告)日：2009-05-21

申请号：US10584264

申请日：2004-12-24

Applicant: Atsushi Ookouchi ,  Taro Yamamoto ,  Hirofumi Takeguchi ,  Hideharu Kyouda ,  Kousuke Yoshihara

Inventor： Atsushi Ookouchi ,  Taro Yamamoto ,  Hirofumi Takeguchi ,  Hideharu Kyouda ,  Kousuke Yoshihara

IPC: G03C5/00 ,  G03G15/10

CPC classification number: H01L21/67051 ,  G03F7/3021 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/6719 ,  Y10S134/902

Abstract: A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

Abstract translation: 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

公开(公告)号：US20080133045A1

公开(公告)日：2008-06-05

申请号：US11949287

申请日：2007-12-03

Applicant: Kouichi Hontake ,  Masashi Enomoto ,  Hideharu Kyouda

Inventor： Kouichi Hontake ,  Masashi Enomoto ,  Hideharu Kyouda

IPC: G06F17/00 ,  B08B13/00 ,  B08B7/04

CPC classification number: H01L21/67051 ,  H01L21/67225

Abstract: A cleaning apparatus for immersion light exposure includes a cleaning apparatus main body including a mechanism configured to perform a cleaning process on the substrate, and a control section configured to control respective components of the cleaning apparatus main body. The control section is arranged to fabricate a new process recipe in response to input of a surface state of a film formed on a substrate, such that the new process recipe contains hardware conditions and/or process conditions corresponding to the surface state, with reference to relationships stored therein between parameter values representing a surface state of a film formed on a substrate and hardware conditions and/or process conditions for performing suitable cleaning for the parameter values; and to control the cleaning apparatus main body to perform a cleaning process in accordance with the new process recipe.

Abstract translation: 用于浸没式曝光的清洁装置包括：清洁装置主体，包括构造成对基板执行清洁处理的机构;以及控制部，其被配置为控制清洁装置主体的各个部件。 控制部分被布置成响应于在基板上形成的膜的表面状态的输入而制造新的工艺配方，使得新工艺配方包含与表面状态相对应的硬件条件和/或工艺条件，参考 存储在其中的表示在基板上形成的膜的表面状态的参数值与用于对参数值执行适当清洁的硬件条件和/或处理条件之间的关系; 并且控制清洁装置主体以根据新的处理配方执行清洁处理。

公开(公告)号：US20070184392A1

公开(公告)日：2007-08-09

申请号：US11623481

申请日：2007-01-16

Applicant: Hideharu Kyouda ,  Kousuke Yoshihara ,  Taro Yamamoto

Inventor： Hideharu Kyouda ,  Kousuke Yoshihara ,  Taro Yamamoto

IPC: G03C5/00

CPC classification number: G03F7/2041 ,  G03F7/11 ,  G03F7/38

Abstract: A resist film formed on a substrate is coated with a water-repellent protective film and the substrate is subjected to a developing process after the substrate has been processed by an immersion exposure process. The protective film is removed from the substrate after the resist film has been processed by the immersion exposure process, the substrate is processed by a heating process, and then the substrate is subjected to a developing process. The surface of the substrate is cleaned with a cleaning liquid before the protective film is removed and after the substrate has been processed by the immersion exposure process or the surface of the substrate is cleaned with a cleaning liquid after removing the protective film and before the substrate is subjected to the heating process.

Abstract translation: 在基板上形成的抗蚀剂膜涂覆有防水保护膜，并且在通过浸没曝光工艺处理基板之后对基板进行显影处理。 在通过浸渍曝光工艺处理了抗蚀剂膜之后，从基板上除去保护膜，通过加热工艺处理基板，然后对基板进行显影处理。 在除去保护膜之前，用浸渍曝光工序处理基板后，用清洗液清洗基板的表面，在除去保护膜之后和基板之前用清洗液清洗基板的表面 进行加热处理。

公开(公告)号：US20070177869A1

公开(公告)日：2007-08-02

申请号：US10590314

申请日：2004-12-16

Applicant: Taro Yamamoto ,  Hideharu Kyouda

Inventor： Taro Yamamoto ,  Hideharu Kyouda

IPC: G03D5/00

CPC classification number: G03F7/162 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/70341 ,  G03F7/70925 ,  H01L21/67028 ,  H01L21/67051

Abstract: Accurate coating and developing having high intrasurface uniformity is achieved by suppressing the influence of components of a resist that may be eluted while a substrate coated with the resist is processed by immersion exposure. A coating unit coats a surface of a substrate with a resist. then, a first cleaning means including a cleaning nozzle cleans the substrate and then the substrate is subjected to an exposure process. Since only a small amount of components of the resist dissolves in a transparent liquid layer formed on the substrate for exposure, an exposure process can form lines in accurate line-widths. Consequently, a resist pattern of lines having accurate line-widths having high intrasurface uniformity can be formed on the substrate by developing the exposed resist.

Abstract translation: 通过抑制在通过浸渍曝光处理涂布有抗蚀剂的基材时，可以抑制可能被洗脱的抗蚀剂的成分的影响来实现具有高表面内均匀性的精确涂布和显影。 涂覆单元用抗蚀剂涂覆基材的表面。 然后，包括清洁喷嘴的第一清洁装置清洁基板，然后对基板进行曝光处理。 由于只有少量的抗蚀剂成分溶解在形成在用于曝光的基板上的透明液体层中，曝光处理可以形成精确线宽的线。 因此，通过显影曝光的抗蚀剂，可以在衬底上形成具有高表面内均匀性的精确线宽的线的抗蚀剂图案。

公开(公告)号：US06811962B2

公开(公告)日：2004-11-02

申请号：US10227814

申请日：2002-08-27

Applicant: Kousuke Yoshihara ,  Keiichi Tanaka ,  Taro Yamamoto ,  Hideharu Kyouda ,  Hirofumi Takeguchi ,  Atsushi Ookouchi

Inventor： Kousuke Yoshihara ,  Keiichi Tanaka ,  Taro Yamamoto ,  Hideharu Kyouda ,  Hirofumi Takeguchi ,  Atsushi Ookouchi

IPC: G03F730

CPC classification number: H01L21/6715 ,  G03D3/06 ,  G03F7/3021

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract translation: 在其上形成的显影液中的溶解速度低的抗蚀剂膜的显影处理中，首先将低浓度的显影液供给到晶片上，并将晶片放置在 规定的时间以允许显影反应进行，然后进一步提供浓度高于首先提供的显影溶液的显影溶液的显影溶液到晶片上，使基板静置并随后冲洗晶片，由此提高均匀性 晶片的中心部分和周边部分的线宽度。

公开(公告)号：US08366872B2

公开(公告)日：2013-02-05

申请号：US13161185

申请日：2011-06-15

Applicant: Kenji Tsutsumi ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

Inventor： Kenji Tsutsumi ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

IPC: C23F1/02

CPC classification number: C23C26/00 ,  G03F1/80 ,  G03F7/707 ,  G03F7/70916 ,  H01L21/308 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707

Abstract: According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.

Abstract translation: 根据本发明，在基板的光刻处理中，在除去基板背面的涂膜后立即进行曝光处理，在曝光后立即在基板的背面形成涂膜 处理。 此后，进行蚀刻处理等，并且进行一系列这些处理和处理步骤预定次数。 在蚀刻处理时，已经在基板的背面形成了涂膜，使得即使涂膜受到微小的划痕，基板本身的后表面也被涂膜保护，因此不会被刮伤。 此外，由于在曝光处理之前立即除去基板后表面上的涂膜，所以基板的后表面可以是平坦的，用于曝光处理。