公开(公告)号：US20090004607A1

公开(公告)日：2009-01-01

申请号：US11658448

申请日：2005-07-29

Applicant: Takeshi Shimoaoki ,  Hideharu Kyouda ,  Takafumi Niwa

Inventor： Takeshi Shimoaoki ,  Hideharu Kyouda ,  Takafumi Niwa

IPC: G03F7/20

CPC classification number: G03F7/70925 ,  G03F7/70341 ,  G03F7/70916

Abstract: A resist film is formed on a surface of a wafer. Then, a liquid layer used for irradiating the resist film with exposure light rays is formed from a liquid between an optical component facing the resist film and the surface of the wafer. The liquid is capable of transmitting the exposure light rays and has a function of cleaning a surface of the wafer and a surface of the optical component. Then, the resist film is irradiated with the exposure light rays projected from the optical component and transmitted through the liquid layer, to perform light exposure with a predetermined pattern on the resist film. Then, development is performed on the wafer after the light exposure, to form a predetermined pattern on the wafer.

Abstract translation: 在晶片的表面上形成抗蚀剂膜。 然后，从面向抗蚀剂膜的光学部件和晶片的表面之间的液体形成用于用曝光光线照射抗蚀剂膜的液体层。 液体能够透射曝光光线，并且具有清洁晶片的表面和光学部件的表面的功能。 然后，用从光学部件突出的透射光束照射抗蚀剂膜，透过液体层，在抗蚀剂膜上进行规定图案的曝光。 然后，在曝光后在晶片上进行显影，以在晶片上形成预定图案。

公开(公告)号：US20120218531A1

公开(公告)日：2012-08-30

申请号：US13397043

申请日：2012-02-15

Applicant: Kouichi Hontake ,  Takafumi Niwa ,  Hideharu Kyouda ,  Kousuke Yoshihara

Inventor： Kouichi Hontake ,  Takafumi Niwa ,  Hideharu Kyouda ,  Kousuke Yoshihara

IPC: G03B27/32

CPC classification number: G03F7/40 ,  G03F7/3021 ,  G03F7/325

Abstract: Provided are a developing method and a developing apparatus that can reduce process time and improve throughput in a developing process using a developer containing organic solvent. The present invention relates to a developing method for performing developing by supplying a developer containing organic solvent to a substrate having its surface coated with a resist and exposed. The developing method of the invention includes a liquid film forming step for forming a liquid film by supplying the developer from a developer supply nozzle to a central portion of the substrate while rotating the substrate, and a developing step for developing the resist film on the substrate while rotating the substrate in a state where the supply of the developer from the developer supply nozzle to the substrate is stopped and in such a manner that the liquid film of the developer would not dry.

Abstract translation: 提供一种显影方法和显影装置，其可以使用含有有机溶剂的显影剂在显影过程中缩短处理时间并提高生产量。 本发明涉及通过将含有有机溶剂的显影剂供给到其表面被抗蚀剂涂布并暴露的基材来进行显影的显影方法。 本发明的显影方法包括：液体成膜步骤，用于通过在显影剂供应喷嘴中将显影剂供给到基板的中心部分同时旋转基板来形成液膜;以及显影步骤，用于在基板上显影抗蚀剂膜 同时在显影剂从显影剂供给喷嘴供给到基板停止的状态下以使得显影剂的液膜不会干燥的方式旋转基板。

公开(公告)号：US08110325B2

公开(公告)日：2012-02-07

申请号：US13022811

申请日：2011-02-08

Applicant: Takafumi Niwa ,  Hiroshi Nakamura ,  Hideharu Kyouda

Inventor： Takafumi Niwa ,  Hiroshi Nakamura ,  Hideharu Kyouda

IPC: G03F9/00 ,  G03C5/00

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  H01L21/67178 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate treatment method including a first treatment process (S13 to S16) for exposing, heating, and developing a substrate on which a first resist is formed, thereby forming a first resist pattern, and a second treatment process (S17 to S20) for forming a second resist film on the substrate on which the first resist pattern is formed, exposing, heating, and developing the substrate on which the second resist film is formed, thereby forming a second resist pattern. Also, the substrate treatment method compensates a first treatment condition in a first treatment process (S22 to S25) based on a measured value of a line width of the second resist pattern and a second treatment condition in a second treatment process (S26 to S29) based on a measured value of a line width of the first resist pattern.

Abstract translation: 一种基板处理方法，包括：第一处理工艺（S13至S16），用于对形成第一抗蚀剂的基板进行曝光，加热和显影，从而形成第一抗蚀剂图案;以及第二处理工艺（S17至S20），用于形成 在其上形成第一抗蚀剂图案的基板上的第二抗蚀剂膜，暴露，加热和显影其上形成有第二抗蚀剂膜的基板，从而形成第二抗蚀剂图案。 此外，基板处理方法在第二处理工序中基于第二抗蚀剂图案的线宽度的测量值和第二处理条件在第一处理工艺（S22至S25）中补偿第一处理条件（S26至S29） 基于第一抗蚀剂图案的线宽的测量值。

公开(公告)号：US5851620A

公开(公告)日：1998-12-22

申请号：US769592

申请日：1996-12-18

Applicant: Hiroshi Nakajima ,  Tetsuya Hasegawa ,  Takafumi Niwa

Inventor： Hiroshi Nakajima ,  Tetsuya Hasegawa ,  Takafumi Niwa

IPC: B29C45/26 ,  B29L17/00 ,  G11B7/26 ,  B32B3/00

CPC classification number: B29C45/2632 ,  B29C2045/264 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

Abstract: Improved disc metal mold provides an improved disc without a ring groove thereon. The improved disc metal mold has a fixed metal mold section and a movable metal mold section for forming a cavity therebetween. One of the fixed and movable metal molds has a stamper having an information signal surface on which an information signal is formed in a form of pits, wherein a fused resin is injected into the cavity to form a disc substrate having a center through hole at the center thereof. The disc metal mold includes the stamper having an center hole at a center thereof for retaining the stamper itself and a retainer for retaining the stamper to engage with the center hole of the stamper. The retainer has a slightly larger diameter at a top surface thereof than a diameter of the center hole of the stamper so that the top surface of the retainer is approximately flush with the information signal surface of the stamper by causing the top end thereof to engage with the center hole of the stamper. Thus, it is possible to provide a recorded disc having a seamless flush information surface without ring groove.

Abstract translation: 改进的圆盘金属模提供了一种改进的盘，其上没有环槽。 改进的圆盘金属模具具有用于在其间形成空腔的固定金属模具部分和可动金属模具部分。 固定和可移动的金属模具中的一个具有一个具有信息信号表面的压模，信息信号以凹坑的形式形成在其上，其中将熔融树脂注入空腔中以形成具有中心通孔的盘基片 中心。 盘形金属模具包括压模，其中心具有用于保持压模本身的中心孔和用于保持压模以与压模的中心孔接合的保持器。 保持器在其顶表面处具有比压模的中心孔的直径稍大的直径，使得保持器的顶表面通过使其顶端与压模的顶端接合而与压模的信息信号表面大致齐平 压模的中心孔。 因此，可以提供具有无环槽的无缝冲洗信息表面的记录盘。

公开(公告)号：US08367308B2

公开(公告)日：2013-02-05

申请号：US13023670

申请日：2011-02-09

Applicant: Hiroshi Nakamura ,  Takafumi Niwa ,  Yuhei Kuwahara ,  Tadatoshi Tomita

Inventor： Hiroshi Nakamura ,  Takafumi Niwa ,  Yuhei Kuwahara ,  Tadatoshi Tomita

IPC: G03F7/26

CPC classification number: G03F7/0035 ,  G03F7/2041 ,  G03F7/40 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/6715

Abstract: A substrate processing method includes a first process (step S12 to step S16) of forming a first resist pattern by exposing a substrate having thereon a first resist film to lights, developing the exposed substrate and cleaning the developed substrate; and a second process (step S17 to step S20) of forming a second resist pattern by forming a second resist film on the substrate having thereon the first resist pattern, exposing the substrate having thereon the second resist film to lights, and developing the exposed substrate. A first processing condition is determined based on first data showing a relationship between a first processing condition under which a cleaning process is performed on the substrate in the first process (step S16) and a line width of the second resist pattern, and the first process (step S16) is performed on the substrate under the determined first processing condition.

Abstract translation: 基板处理方法包括通过使其上具有第一抗蚀剂膜的基板曝光来形成第一抗蚀剂图案的第一处理（步骤S12至步骤S16），使曝光的基板显影并清洁显影的基板; 以及通过在其上具有第一抗蚀剂图案的基板上形成第二抗蚀剂膜而形成第二抗蚀剂图案的第二工艺（步骤S17至步骤S20），将其上具有第二抗蚀剂膜的基板曝光，并使曝光的基板 。 第一处理条件基于表示在第一处理（步骤S16）中对基板进行清洗处理的第一处理条件与第二抗蚀剂图案的线宽之间的关系的第一数据和第一处理 （步骤S16）在确定的第一处理条件下在基板上进行。

公开(公告)号：US20110200949A1

公开(公告)日：2011-08-18

申请号：US13023670

申请日：2011-02-09

Applicant: Hiroshi Nakamura ,  Takafumi Niwa ,  Yuhei Kuwahara ,  Tadatoshi Tomita

Inventor： Hiroshi Nakamura ,  Takafumi Niwa ,  Yuhei Kuwahara ,  Tadatoshi Tomita

IPC: G03F7/20

CPC classification number: G03F7/0035 ,  G03F7/2041 ,  G03F7/40 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/6715

Abstract: A substrate processing method includes a first process (step S12 to step S16) of forming a first resist pattern by exposing a substrate having thereon a first resist film to lights, developing the exposed substrate and cleaning the developed substrate; and a second process (step S17 to step S20) of forming a second resist pattern by forming a second resist film on the substrate having thereon the first resist pattern, exposing the substrate having thereon the second resist film to lights, and developing the exposed substrate. A first processing condition is determined based on first data showing a relationship between a first processing condition under which a cleaning process is performed on the substrate in the first process (step S16) and a line width of the second resist pattern, and the first process (step S16) is performed on the substrate under the determined first processing condition.

Abstract translation: 基板处理方法包括通过使其上具有第一抗蚀剂膜的基板曝光来形成第一抗蚀剂图案的第一处理（步骤S12至步骤S16），使曝光的基板显影并清洁显影的基板; 以及通过在其上具有第一抗蚀剂图案的基板上形成第二抗蚀剂膜而形成第二抗蚀剂图案的第二工艺（步骤S17至步骤S20），将其上具有第二抗蚀剂膜的基板曝光，并使曝光的基板 。 第一处理条件基于表示在第一处理（步骤S16）中对基板进行清洗处理的第一处理条件与第二抗蚀剂图案的线宽之间的关系的第一数据和第一处理 （步骤S16）在确定的第一处理条件下在基板上进行。