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    MULTI-INTERPOSER STRUCTURES AND METHODS OF MAKING THE SAME
    1.
    发明申请
    MULTI-INTERPOSER STRUCTURES AND METHODS OF MAKING THE SAME 有权

    公开(公告)号：US20220415867A1

    公开(公告)日：2022-12-29

    申请号：US17735536

    申请日：2022-05-03

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Hsien-Wei CHEN ,  Shin-Puu JENG

    IPC分类号： H01L25/10 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498 ,  H01L23/14 ,  H01L23/538 ,  H01L23/64

    摘要： Various disclosed embodiments include a substrate, a first interposer coupled to the substrate and to a first semiconductor device die, and a second interposer coupled to the substrate and to a second semiconductor device die. The first semiconductor device die may be a serializer/de-serializer die and the first semiconductor device die coupled to the first interposer may be located proximate to a sidewall of the substrate. In certain embodiments, the second semiconductor device die may be a system-on-chip die. In further embodiments, the second interposer may also be coupled to high bandwidth memory die. Placing a serializer/de-serializer die proximate to a sidewall of a substrate allows a length of electrical pathways to be reduced, thus reducing impedance and RC delay. The use of smaller, separate, interposers also reduces complexity of fabrication of interposers and similarly lowers impedance associated with redistribution interconnect structures associated with the interposers.