公开(公告)号：US20240186390A1

公开(公告)日：2024-06-06

申请号：US18439290

申请日：2024-02-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Chi PAN ,  Ying-Liang Chuang ,  Ming-Hsi Yeh ,  Kuo-Bin Huang

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/42368 ,  H01L21/28185 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/513 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7856 ,  H01L21/31122 ,  H01L21/82345

Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a gate dielectric layer disposed over the fin structure. The semiconductor device includes an interfacial layer over a top portion of the gate dielectric layer. A bottom portion of gate dielectric layer is free of contact with the interfacial layer. The semiconductor device includes a gate structure straddling the fin structure.

公开(公告)号：US20230420538A1

公开(公告)日：2023-12-28

申请号：US17849154

申请日：2022-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Chi PAN ,  Kuan-Wei Lin ,  Chun-Neng Lin ,  Yu-Shih Wang ,  Ming-Hsi Yeh ,  Kuo-Bin Huang

IPC: H01L29/49 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/4966 ,  H01L29/7851 ,  H01L21/28088 ,  H01L29/66795

Abstract: A semiconductor device includes a plurality of fin structures disposed over a substrate and a work function alloy layer disposed over each fin structure of the plurality of fin structures. The plurality of fin structures includes a first fin structure and a second fin structure. A content of a first element in a first portion of the work function alloy layer, which portion is disposed over the first fin structure, is different from a content of the first element in a second portion of the work function alloy layer, which portion is disposed over the second fin structure.