公开(公告)号：US20240136226A1

公开(公告)日：2024-04-25

申请号：US18401989

申请日：2024-01-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Li-Wei CHU ,  Ying-Chi SU ,  Yu-Kai CHEN ,  Wei-Yip LOH ,  Hung-Hsu CHEN ,  Chih-Wei CHANG ,  Ming-Hsing TSAI

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/3205

CPC分类号： H01L21/76897 ,  H01L21/02068 ,  H01L21/02123 ,  H01L21/32053

摘要： An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

公开(公告)号：US20230420565A1

公开(公告)日：2023-12-28

申请号：US17847787

申请日：2022-06-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ying-Chi SU ,  Li-Wei CHU ,  Hung-Hsu CHEN ,  Chih-Wei CHANG ,  Ming-Hsing TSAI

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L29/7851 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/16

摘要： A method for manufacturing a semiconductor structure includes: forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first and second semiconductor portions having different materials; and performing an oxide formation process to oxidize the first and second semiconductor portions such that a first oxidation layer formed on the first semiconductor portion has a thickness less than that of a second oxidation layer formed on the second semiconductor portion.

公开(公告)号：US20220328350A1

公开(公告)日：2022-10-13

申请号：US17809109

申请日：2022-06-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Li-Wei CHU ,  Ying-Chi SU ,  Yu-Kai CHEN ,  Wei-Yip LOH ,  Hung-Hsu CHEN ,  Chih-Wei CHANG ,  Ming-Hsing TSAI

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/3205

摘要： An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.