公开(公告)号：US20240136226A1

公开(公告)日：2024-04-25

申请号：US18401989

申请日：2024-01-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Li-Wei CHU ,  Ying-Chi SU ,  Yu-Kai CHEN ,  Wei-Yip LOH ,  Hung-Hsu CHEN ,  Chih-Wei CHANG ,  Ming-Hsing TSAI

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/3205

CPC分类号： H01L21/76897 ,  H01L21/02068 ,  H01L21/02123 ,  H01L21/32053

摘要： An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

公开(公告)号：US20210364925A1

公开(公告)日：2021-11-25

申请号：US17369001

申请日：2021-07-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Hung CHEN ,  Yu-Kai CHEN

IPC分类号： G03F7/40

摘要： A photoresist baking apparatus is provided. The photoresist baking apparatus includes a baking chamber having an exhaust port on a sidewall of the baking chamber, a hot plate disposed in the baking chamber, an exhaust line coupled to the exhaust port, and a cover plate disposed over the hot plate and between the hot plate and the exhaust port. The exhaust line is configured to exhaust out an atmosphere inside the baking chamber in an exhaust direction. The cover plate has a plurality of exhaust holes to allow air to flow through. The exhaust holes include a first exhaust hole and a second exhaust hole arranged in a first direction that is perpendicular to the exhaust direction.

公开(公告)号：US20220328350A1

公开(公告)日：2022-10-13

申请号：US17809109

申请日：2022-06-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Li-Wei CHU ,  Ying-Chi SU ,  Yu-Kai CHEN ,  Wei-Yip LOH ,  Hung-Hsu CHEN ,  Chih-Wei CHANG ,  Ming-Hsing TSAI

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/3205

摘要： An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

公开(公告)号：US20220326619A1

公开(公告)日：2022-10-13

申请号：US17852632

申请日：2022-06-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Hung CHEN ,  Yu-Kai CHEN

IPC分类号： G03F7/40

摘要： A photoresist baking apparatus is provided. The photoresist baking apparatus includes a baking chamber, a hot plate disposed in the baking chamber, and a cover plate disposed over the hot plate. The cover plate has a plurality of exhaust holes. The exhaust holes include a first exhaust hole and a second exhaust hole arranged in a first direction. The first exhaust hole and the second exhaust hole have different sizes.