公开(公告)号：US20230067752A1

公开(公告)日：2023-03-02

申请号：US17460208

申请日：2021-08-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ya-Yi Tsai ,  Yi-Chun Chen ,  Wei-Han Chen ,  Wei-Ting Guo ,  Shu-Yuan Ku

IPC分类号： H01L29/66 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234

摘要： A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.

公开(公告)号：US11791403B2

公开(公告)日：2023-10-17

申请号：US17460208

申请日：2021-08-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ya-Yi Tsai ,  Yi-Chun Chen ,  Wei-Han Chen ,  Wei-Ting Guo ,  Shu-Yuan Ku

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/6681 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/7851

摘要： A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.

公开(公告)号：US20240322017A1

公开(公告)日：2024-09-26

申请号：US18737615

申请日：2024-06-07

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Ya-Yi Tsai ,  Yi-Chun Chen ,  Wei-Han Chen ,  Wei-Ting Guo ,  Shu-Yuan Ku

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/6681 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/7851

摘要： A semiconductor device includes a semiconductor substrate; an isolation region disposed on the semiconductor substrate; a plurality of dummy fins disposed over the isolation region and partially extending into the isolation region; and a dielectric material disposed between the plurality of dummy fins, and partially extending through the isolation region and partially into the semiconductor substrate.

公开(公告)号：US12034063B2

公开(公告)日：2024-07-09

申请号：US18232533

申请日：2023-08-10

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Ya-Yi Tsai ,  Yi-Chun Chen ,  Wei-Han Chen ,  Wei-Ting Guo ,  Shu-Yuan Ku

IPC分类号： H01L29/76 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/94

CPC分类号： H01L29/6681 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/7851

摘要： A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.

公开(公告)号：US20230387271A1

公开(公告)日：2023-11-30

申请号：US18232533

申请日：2023-08-10

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Ya-Yi Tsai ,  Yi-Chun Chen ,  Wei-Han Chen ,  Wei-Ting Guo ,  Shu-Yuan Ku

IPC分类号： H01L29/66 ,  H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

CPC分类号： H01L29/6681 ,  H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/7851

摘要： A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.

公开(公告)号：US20230061323A1

公开(公告)日：2023-03-02

申请号：US17460198

申请日：2021-08-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ya-Yi Tsai ,  Shih-Yao Lin ,  Chi-Hsiang Chang ,  Wei-Han Chen ,  Shu-Yuan Ku

IPC分类号： H01L27/088 ,  H01L21/8234

摘要： A method of fabricating a semiconductor device is described. A substrate is provided. A plurality of fins is formed extending from the substrate, the fins including a first group of active fins arranged in an active region, and including an inactive fin having at least a portion in an inactive region, the active fins separated by first trench regions between adjacent of the active regions, the inactive fin separated from its closest active fin by a second trench region, the second trench region having a greater width than that of a trench region of the first trench regions. A dummy fin is formed on the isolation dielectric in the second trench region, the dummy fin disposed between the first group of active fins and the inactive fin. A dummy gate is formed over the fins. The gate isolation structure is disposed between the dummy fin and the inactive fin and separates regions of the dummy gate.