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公开(公告)号：US11004724B2
公开(公告)日：2021-05-11
申请号：US16390413
申请日：2019-04-22
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Li-Li Su , Chien-Chang Su , Heng-Wen Ting , Jung-Chi Tai , Che-Hui Lee , Ying-Wei Li
IPC分类号： H01L29/66 , H01L21/764 , H01L29/06 , H01L29/08 , H01L29/16 , H01L29/24 , H01L29/161 , H01L29/165 , H01L29/78
摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
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公开(公告)号：US20170076973A1
公开(公告)日：2017-03-16
申请号：US15002077
申请日：2016-01-20
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Lilly Su , Chien-Chang Su , Heng-Wen Ting , Jung-Chi Tai , Che-Hui Lee , Ying-Wei Li
IPC分类号： H01L21/764 , H01L29/08 , H01L29/16 , H01L29/66 , H01L29/161 , H01L29/165 , H01L29/78 , H01L29/06 , H01L29/24
CPC分类号： H01L21/764 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/24 , H01L29/66795 , H01L29/7848 , H01L29/7851
摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
摘要翻译： 一个实施例是一种结构，其包括衬底上的第一鳍片，衬底上的第二鳍片，与第一鳍片相邻的第二鳍片，围绕第一鳍片和第二鳍片的隔离区域，沿着侧壁和上表面的栅极结构 所述第一鳍片和所述第二鳍片的栅极结构限定所述第一鳍片和所述第二鳍片中的沟道区域，所述第一鳍片上的源极/漏极区域和邻近所述栅极结构的所述第二鳍片，以及将所述源极/ 漏极区域。
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公开(公告)号：US10991795B2
公开(公告)日：2021-04-27
申请号：US16594851
申请日：2019-10-07
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Heng-Wen Ting , Jung-Chi Tai , Li-Li Su , Tzu-Ching Lin
IPC分类号： H01L29/06 , H01L21/02 , H01L21/283 , H01L21/306 , H01L21/762 , H01L21/764 , H01L29/08 , H01L29/66 , H01L29/78 , H01L21/3065
摘要： A method includes forming a crown structure over a substrate; forming fins in the crown structure; forming an intra-device isolation region between the fins and forming inter-device isolation regions on opposing sides of the crown structure; forming a gate structure over the fins; forming a dielectric layer that extends continuously over the inter-device isolation regions, the fins and the intra-device isolation region; performing an etching process to reduce a thickness of the dielectric layer, where after the etching process, upper surfaces of the inter-device isolation regions and upper surfaces of the fins are exposed while an upper surface of the intra-device isolation region is covered by a remaining portion of the dielectric layer; and forming an epitaxial structure over the exposed upper surfaces of the fins, where after the epitaxial structure is formed, there is a void between the epitaxial structure and the intra-device isolation region.
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公开(公告)号：US10269618B2
公开(公告)日：2019-04-23
申请号：US15823157
申请日：2017-11-27
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Li-Li Su , Chien-Chang Su , Heng-Wen Ting , Jung-Chi Tai , Che-Hui Lee , Ying-Wei Li
IPC分类号： H01L29/06 , H01L29/08 , H01L29/16 , H01L29/24 , H01L29/66 , H01L29/78 , H01L21/764 , H01L29/161 , H01L29/165
摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
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公开(公告)号：US10468482B2
公开(公告)日：2019-11-05
申请号：US15883179
申请日：2018-01-30
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Heng-Wen Ting , Jung-Chi Tai , Li-Li Su , Tzu-Ching Lin
IPC分类号： H01L29/06 , H01L21/283 , H01L21/306 , H01L21/762 , H01L21/764 , H01L29/08 , H01L29/66 , H01L29/78 , H01L21/02 , H01L21/3065
摘要： A method includes forming a crown structure over a substrate; forming fins in the crown structure; forming an intra-device isolation region between the fins and forming inter-device isolation regions on opposing sides of the crown structure; forming a gate structure over the fins; forming a dielectric layer that extends continuously over the inter-device isolation regions, the fins and the intra-device isolation region; performing an etching process to reduce a thickness of the dielectric layer, where after the etching process, upper surfaces of the inter-device isolation regions and upper surfaces of the fins are exposed while an upper surface of the intra-device isolation region is covered by a remaining portion of the dielectric layer; and forming an epitaxial structure over the exposed upper surfaces of the fins, where after the epitaxial structure is formed, there is a void between the epitaxial structure and the intra-device isolation region.
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公开(公告)号：US20190252240A1
公开(公告)日：2019-08-15
申请号：US16390413
申请日：2019-04-22
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Li-Li Su , Chien-Chang Su , Heng-Wen Ting , Jung-Chi Tai , Che-Hui Lee , Ying-Wei Li
IPC分类号： H01L21/764 , H01L29/66 , H01L29/78 , H01L29/165 , H01L29/06 , H01L29/24 , H01L29/16 , H01L29/08 , H01L29/161
CPC分类号： H01L21/764 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/24 , H01L29/66795 , H01L29/7848 , H01L29/7851 , H01L29/7853
摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
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公开(公告)号：US20200035784A1
公开(公告)日：2020-01-30
申请号：US16594851
申请日：2019-10-07
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Heng-Wen Ting , Jung-Chi Tai , Li-Li Su , Tzu-Ching Lin
IPC分类号： H01L29/06 , H01L21/02 , H01L21/283 , H01L21/306 , H01L21/762 , H01L21/764 , H01L29/08 , H01L29/66 , H01L29/78
摘要： A method includes forming a crown structure over a substrate; forming fins in the crown structure; forming an intra-device isolation region between the fins and forming inter-device isolation regions on opposing sides of the crown structure; forming a gate structure over the fins; forming a dielectric layer that extends continuously over the inter-device isolation regions, the fins and the intra-device isolation region; performing an etching process to reduce a thickness of the dielectric layer, where after the etching process, upper surfaces of the inter-device isolation regions and upper surfaces of the fins are exposed while an upper surface of the intra-device isolation region is covered by a remaining portion of the dielectric layer; and forming an epitaxial structure over the exposed upper surfaces of the fins, where after the epitaxial structure is formed, there is a void between the epitaxial structure and the intra-device isolation region.
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公开(公告)号：US20180175144A1
公开(公告)日：2018-06-21
申请号：US15883179
申请日：2018-01-30
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Heng-Wen Ting , Jung-Chi Tai , Li-Li Su , Tzu-Ching Lin
IPC分类号： H01L29/06 , H01L29/78 , H01L29/66 , H01L29/08 , H01L21/764 , H01L21/762 , H01L21/02 , H01L21/306 , H01L21/283 , H01L21/3065
CPC分类号： H01L29/0649 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/283 , H01L21/30604 , H01L21/3065 , H01L21/76224 , H01L21/764 , H01L29/0653 , H01L29/0847 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A method includes forming a crown structure over a substrate; forming fins in the crown structure; forming an intra-device isolation region between the fins and forming inter-device isolation regions on opposing sides of the crown structure; forming a gate structure over the fins; forming a dielectric layer that extends continuously over the inter-device isolation regions, the fins and the intra-device isolation region; performing an etching process to reduce a thickness of the dielectric layer, where after the etching process, upper surfaces of the inter-device isolation regions and upper surfaces of the fins are exposed while an upper surface of the intra-device isolation region is covered by a remaining portion of the dielectric layer; and forming an epitaxial structure over the exposed upper surfaces of the fins, where after the epitaxial structure is formed, there is a void between the epitaxial structure and the intra-device isolation region.
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公开(公告)号：US20180082883A1
公开(公告)日：2018-03-22
申请号：US15823157
申请日：2017-11-27
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Li-Li Su , Chien-Chang Su , Heng-Wen Ting , Jung-Chi Tai , Che-Hui Lee , Ying-Wei Li
IPC分类号： H01L21/764 , H01L29/66 , H01L29/06 , H01L29/08 , H01L29/16 , H01L29/24 , H01L29/161 , H01L29/165 , H01L29/78
CPC分类号： H01L21/764 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/24 , H01L29/66795 , H01L29/7848 , H01L29/7851
摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
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公开(公告)号：US09831116B2
公开(公告)日：2017-11-28
申请号：US15002077
申请日：2016-01-20
发明人： Yen-Ru Lee , Chii-Horng Li , Chien-I Kuo , Li-Li Su , Chien-Chang Su , Heng-Wen Ting , Jung-Chi Tai , Che-Hui Lee , Ying-Wei Li
IPC分类号： H01L21/764 , H01L29/08 , H01L29/16 , H01L29/66 , H01L29/161 , H01L29/165 , H01L29/78 , H01L29/06 , H01L29/24
CPC分类号： H01L21/764 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/24 , H01L29/66795 , H01L29/7848 , H01L29/7851
摘要： An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.
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