公开(公告)号：US11852966B2

公开(公告)日：2023-12-26

申请号：US17340991

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/20 ,  G03F1/38 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/54 ,  G03F7/2004 ,  G03F1/22

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US10816892B2

公开(公告)日：2020-10-27

申请号：US15966862

申请日：2018-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Cheng Chen ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Shih-Ming Chang ,  Tran-Hui Shen ,  Yen-CHeng Ho ,  Chen-Shao Hsu

IPC: G03F1/36 ,  G03F1/76 ,  G03F1/78 ,  H01J37/317 ,  G03F7/20

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

公开(公告)号：US20190196322A1

公开(公告)日：2019-06-27

申请号：US15851829

申请日：2017-12-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/54 ,  G03F7/2004

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US11327405B2

公开(公告)日：2022-05-10

申请号：US17080652

申请日：2020-10-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Cheng Chen ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Shih-Ming Chang ,  Tran-Hui Shen ,  Yen-Cheng Ho ,  Chen-Shao Hsu

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/78 ,  H01J37/317 ,  G03F1/76

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

公开(公告)号：US20210294203A1

公开(公告)日：2021-09-23

申请号：US17340991

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/54 ,  G03F1/38

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US11029593B2

公开(公告)日：2021-06-08

申请号：US16660300

申请日：2019-10-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/54 ,  G03F1/24 ,  G03F7/20 ,  G03F1/38 ,  G03F1/22

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US20200050098A1

公开(公告)日：2020-02-13

申请号：US16660300

申请日：2019-10-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/24 ,  G03F1/38 ,  G03F1/22 ,  G03F1/54 ,  G03F7/20

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.