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公开(公告)号：US11526081B2
公开(公告)日：2022-12-13
申请号：US17366319
申请日：2021-07-02
发明人： Shih-Ming Chang , Wen Lo , Chun-Hung Liu , Chia-Hua Chang , Hsin-Wei Wu , Ta-Wei Ou , Chien-Chih Chen , Chien-Cheng Chen
摘要： An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.
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公开(公告)号：US11327405B2
公开(公告)日：2022-05-10
申请号：US17080652
申请日：2020-10-26
发明人： Chien-Cheng Chen , Chia-Jen Chen , Hsin-Chang Lee , Shih-Ming Chang , Tran-Hui Shen , Yen-Cheng Ho , Chen-Shao Hsu
IPC分类号： G03F7/20 , G03F1/36 , G03F1/78 , H01J37/317 , G03F1/76
摘要： In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
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公开(公告)号：US20210405534A1
公开(公告)日：2021-12-30
申请号：US17366319
申请日：2021-07-02
发明人： Shih-Ming Chang , Wen Lo , Chun-Hung Liu , Chia-Hua Chang , Hsin-Wei Wu , Ta-Wei Ou , Chien-Chih Chen , Chien-Cheng Chen
摘要： An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.
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公开(公告)号：US20210294203A1
公开(公告)日：2021-09-23
申请号：US17340991
申请日：2021-06-07
发明人： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
摘要： A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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公开(公告)号：US11029593B2
公开(公告)日：2021-06-08
申请号：US16660300
申请日：2019-10-22
发明人： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
摘要： A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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公开(公告)号：US20200050098A1
公开(公告)日：2020-02-13
申请号：US16660300
申请日：2019-10-22
发明人： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
摘要： A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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公开(公告)号：US10816892B2
公开(公告)日：2020-10-27
申请号：US15966862
申请日：2018-04-30
发明人： Chien-Cheng Chen , Chia-Jen Chen , Hsin-Chang Lee , Shih-Ming Chang , Tran-Hui Shen , Yen-CHeng Ho , Chen-Shao Hsu
IPC分类号： G03F1/36 , G03F1/76 , G03F1/78 , H01J37/317 , G03F7/20
摘要： In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
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公开(公告)号：US11899367B2
公开(公告)日：2024-02-13
申请号：US18064548
申请日：2022-12-12
发明人： Shih-Ming Chang , Wen Lo , Chun-Hung Liu , Chia-Hua Chang , Hsin-Wei Wu , Ta-Wei Ou , Chien-Chih Chen , Chien-Cheng Chen
CPC分类号： G03F7/2061 , G03F1/36 , G03F1/78
摘要： An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.
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公开(公告)号：US20230273524A1
公开(公告)日：2023-08-31
申请号：US18064548
申请日：2022-12-12
发明人： Shih-Ming Chang , Wen Lo , Chun-Hung Liu , Chia-Hua Chang , Hsin-Wei Wu , Ta-Wei Ou , Chien-Chih Chen , Chien-Cheng Chen
CPC分类号： G03F7/2061 , G03F1/36 , G03F1/78
摘要： An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.
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公开(公告)号：US20190196322A1
公开(公告)日：2019-06-27
申请号：US15851829
申请日：2017-12-22
发明人： Chin-Hsiang Lin , Chien-Cheng Chen , Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Yih-Chen Su , Gaston Lee , Tran-Hui Shen
CPC分类号： G03F1/24 , G03F1/54 , G03F7/2004
摘要： A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
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