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公开(公告)号:US20210013173A1
公开(公告)日:2021-01-14
申请号:US17034917
申请日:2020-09-28
发明人: Wei-Yu Chen , Chia-Shen Cheng , Hao-Jan Pei , Philip Yu-Shuan Chung , Kuei-Wei Huang , Yu-Peng Tsai , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu , Chung-Shi Liu
IPC分类号: H01L23/00 , H01L23/31 , H01L23/498 , H01L21/56
摘要: A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.
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公开(公告)号:US20240234365A1
公开(公告)日:2024-07-11
申请号:US18613954
申请日:2024-03-22
发明人: Wei-Yu Chen , Chia-Shen Cheng , Hao-Jan Pei , Philip Yu-Shuan Chung , Kuei-Wei Huang , Yu-Peng Tsai , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu , Chung-Shi Liu
IPC分类号: H01L23/00 , H01L21/56 , H01L23/31 , H01L23/498
CPC分类号: H01L24/81 , H01L21/56 , H01L23/3114 , H01L23/49822 , H01L24/17 , H01L2224/175 , H01L2224/81224 , H01L2924/3511
摘要: A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.
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公开(公告)号:US20200152616A1
公开(公告)日:2020-05-14
申请号:US16740463
申请日:2020-01-12
发明人: Hsuan-Ting Kuo , Ching-Hua Hsieh , Cheng-Ting Chen , Hsiu-Jen Lin , Hao-Jan Pei , Yu-Peng Tsai , Chia-Lun Chang , Chih-Chiang Tsao , Philip Yu-Shuan Chung
IPC分类号: H01L25/00 , H01L23/522 , H01L27/06 , H01L23/00 , H01L23/31 , H01L21/768 , H01L21/683 , H01L21/56
摘要: A manufacturing method of a package-on-package structure includes at least the following steps. A plurality of conductive bumps of a first package is attached to a tape carrier. A second package is coupled to the first package opposite to the plurality of conductive bumps. When coupling the second package, the plurality of conductive bumps are deformed to form a plurality of deformed conductive bumps, and a contact area between the tape carrier and the respective deformed conductive bump increases.
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公开(公告)号:US11830746B2
公开(公告)日:2023-11-28
申请号:US17141835
申请日:2021-01-05
发明人: Wei-Yu Chen , Hao-Jan Pei , Hsuan-Ting Kuo , Chih-Chiang Tsao , Jen-Jui Yu , Philip Yu-Shuan Chung , Chia-Lun Chang , Hsiu-Jen Lin , Ching-Hua Hsieh
CPC分类号: H01L21/50 , B23K1/0016 , H01L21/4853 , H01L24/10 , H01L2021/60135 , H01L2021/60225
摘要: A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.
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公开(公告)号:US20220367408A1
公开(公告)日:2022-11-17
申请号:US17815713
申请日:2022-07-28
发明人: Wei-Yu Chen , Chia-Shen Cheng , Hao-Jan Pei , Philip Yu-Shuan Chung , Kuei-Wei Huang , Yu-Peng Tsai , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu , Chung-Shi Liu
IPC分类号: H01L23/00 , H01L23/31 , H01L23/498 , H01L21/56
摘要: A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.
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公开(公告)号:US11342321B2
公开(公告)日:2022-05-24
申请号:US16740463
申请日:2020-01-12
发明人: Hsuan-Ting Kuo , Ching-Hua Hsieh , Cheng-Ting Chen , Hsiu-Jen Lin , Hao-Jan Pei , Yu-Peng Tsai , Chia-Lun Chang , Chih-Chiang Tsao , Philip Yu-Shuan Chung
IPC分类号: H01L23/00 , H01L25/00 , H01L21/56 , H01L21/683 , H01L21/768 , H01L23/31 , H01L27/06 , H01L23/522
摘要: A manufacturing method of a package-on-package structure includes at least the following steps. A plurality of conductive bumps of a first package is attached to a tape carrier. A second package is coupled to the first package opposite to the plurality of conductive bumps. When coupling the second package, the plurality of conductive bumps are deformed to form a plurality of deformed conductive bumps, and a contact area between the tape carrier and the respective deformed conductive bump increases.
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公开(公告)号:US20220028823A1
公开(公告)日:2022-01-27
申请号:US16935465
申请日:2020-07-22
发明人: Chia-Shen Cheng , Wei-Yu Chen , Philip Yu-Shuan Chung , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu
IPC分类号: H01L23/00
摘要: A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.
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公开(公告)号:US12040309B2
公开(公告)日:2024-07-16
申请号:US17815713
申请日:2022-07-28
发明人: Wei-Yu Chen , Chia-Shen Cheng , Hao-Jan Pei , Philip Yu-Shuan Chung , Kuei-Wei Huang , Yu-Peng Tsai , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu , Chung-Shi Liu
IPC分类号: H01L23/00 , H01L21/56 , H01L23/31 , H01L23/498
CPC分类号: H01L24/81 , H01L21/56 , H01L23/3114 , H01L23/49822 , H01L24/17 , H01L2224/175 , H01L2224/81224 , H01L2924/3511
摘要: A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.
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公开(公告)号:US20230386862A1
公开(公告)日:2023-11-30
申请号:US18447409
申请日:2023-08-10
发明人: Wei-Yu Chen , Hao-Jan Pei , Hsuan-Ting Kuo , Chih-Chiang Tsao , Jen-Jui Yu , Philip Yu-Shuan Chung , Chia-Lun Chang , Hsiu-Jen Lin , Ching-Hua Hsieh
CPC分类号: H01L21/50 , H01L21/4853 , H01L24/10 , B23K1/0016 , H01L2021/60225 , H01L2021/60135
摘要: A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.
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公开(公告)号:US11646293B2
公开(公告)日:2023-05-09
申请号:US16935465
申请日:2020-07-22
发明人: Chia-Shen Cheng , Wei-Yu Chen , Philip Yu-Shuan Chung , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu
IPC分类号: H01L23/00
CPC分类号: H01L24/81 , H01L24/13 , H01L24/75 , H01L2224/81224 , H01L2224/81939
摘要: A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.
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