- 专利标题: Semiconductor device and method of manufacture
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申请号: US17141835申请日: 2021-01-05
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公开(公告)号: US11830746B2公开(公告)日: 2023-11-28
- 发明人: Wei-Yu Chen , Hao-Jan Pei , Hsuan-Ting Kuo , Chih-Chiang Tsao , Jen-Jui Yu , Philip Yu-Shuan Chung , Chia-Lun Chang , Hsiu-Jen Lin , Ching-Hua Hsieh
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 主分类号: B23K1/00
- IPC分类号: B23K1/00 ; H01L21/50 ; H01L21/48 ; H01L23/00 ; H01L21/60
摘要:
A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.
公开/授权文献
- US20220216071A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE 公开/授权日:2022-07-07
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