公开(公告)号：US20190287851A1

公开(公告)日：2019-09-19

申请号：US15920727

申请日：2018-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pin-Wen CHEN ,  Chia-Han LAI ,  Chih-Wei CHANG ,  Mei-Hui FU ,  Ming-Hsing TSAI ,  Wei-Jung LIN ,  Yu Shih WANG ,  Ya-Yi CHENG ,  I-Li CHEN

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/285 ,  H01L21/3213

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

公开(公告)号：US20200105519A1

公开(公告)日：2020-04-02

申请号：US16146529

申请日：2018-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ting LIN ,  Chen-Yuan KAO ,  Rueijer LIN ,  Yu-Sheng WANG ,  I-Li CHEN ,  Hong-Ming WU

IPC: H01L21/02 ,  H01L29/51 ,  H01L29/417 ,  H01L21/285 ,  H01L21/768

Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.