公开(公告)号：US20190287851A1

公开(公告)日：2019-09-19

申请号：US15920727

申请日：2018-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pin-Wen CHEN ,  Chia-Han LAI ,  Chih-Wei CHANG ,  Mei-Hui FU ,  Ming-Hsing TSAI ,  Wei-Jung LIN ,  Yu Shih WANG ,  Ya-Yi CHENG ,  I-Li CHEN

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/285 ,  H01L21/3213

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

公开(公告)号：US20190304833A1

公开(公告)日：2019-10-03

申请号：US15939572

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pin-Wen CHEN ,  Chia-Han LAI ,  Mei-Hui FU ,  Min-Hsiu HUNG ,  Ya-Yi CHENG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a structure includes a first dielectric layer over a substrate, a first conductive feature in the first dielectric layer, a second dielectric layer over the first dielectric layer, a second conductive feature in the second dielectric layer, and a blocking region disposed between the first conductive feature and the second conductive feature. The second conductive feature is disposed between and abutting a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer. The blocking region extends laterally at least from the first sidewall of the second dielectric layer to the second sidewall of the second dielectric layer.