公开(公告)号：US20200105519A1

公开(公告)日：2020-04-02

申请号：US16146529

申请日：2018-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ting LIN ,  Chen-Yuan KAO ,  Rueijer LIN ,  Yu-Sheng WANG ,  I-Li CHEN ,  Hong-Ming WU

IPC: H01L21/02 ,  H01L29/51 ,  H01L29/417 ,  H01L21/285 ,  H01L21/768

Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.