公开(公告)号：US20190131423A1

公开(公告)日：2019-05-02

申请号：US15799385

申请日：2017-10-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-An LIN ,  Chun-Hsiung LIN ,  Chia-Ta YU ,  Sai-Hooi YEONG ,  Ching-Fang HUANG ,  Wen-Hsing HSIEH

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate, a bottom semiconductor fin, at least one sidewall structure, a top semiconductor fin, and a gate structure. The bottom semiconductor fin is disposed on the substrate. The sidewall structure protrudes from the semiconductor fin. The top semiconductor fin is disposed on the bottom semiconductor fin. The top semiconductor fin includes a channel portion and at least one source/drain portion. The source/drain portion is disposed between the channel portion and the sidewall structure. The gate structure covers the channel portion of the top semiconductor fin.

公开(公告)号：US20190067012A1

公开(公告)日：2019-02-28

申请号：US15692221

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-An LIN ,  Chun-Hsiung LIN ,  Kai-Hsuan LEE ,  Sai-Hooi YEONG ,  Cheng-Yu YANG ,  Yen-Ting CHEN

IPC: H01L21/285 ,  H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate, a gate structure, a first doped structure, a second doped structure, and a dielectric layer. The method includes forming a through hole in the dielectric layer. The method includes performing a physical vapor deposition process to deposit a first metal layer over the first doped structure exposed by the through hole. The method includes reacting the first metal layer with the first doped structure to form a metal semiconductor compound layer between the first metal layer and the first doped structure. The method includes removing the first metal layer. The method includes performing a chemical vapor deposition process to deposit a second metal layer in the through hole. The method includes forming a conductive structure in the through hole and over the second metal layer.