公开(公告)号：US11527504B2

公开(公告)日：2022-12-13

申请号：US16989461

申请日：2020-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Fu Shih ,  Chun-Yen Lo ,  Cheng-Lin Huang ,  Wen-Ming Chen ,  Chien-Ming Huang ,  Yuan-Fu Liu ,  Yung-Chiuan Cheng ,  Wei-Chih Huang ,  Chen-Hsun Liu ,  Chien-Pin Chan ,  Yu-Nu Hsu ,  Chi-Hung Lin ,  Te-Hsun Pang ,  Chin-Yu Ku

IPC: H01L23/00 ,  C25D5/12 ,  C25D5/50 ,  C25D7/12 ,  C25D17/12 ,  C25D21/10 ,  C25D17/00 ,  H01L23/31 ,  C25D3/12 ,  C25D3/38 ,  C25D3/60

Abstract: External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

公开(公告)号：US11417539B2

公开(公告)日：2022-08-16

申请号：US17085346

申请日：2020-10-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Su-Fei Lin ,  Hsu-Lun Liu ,  Chien-Pin Chan ,  Yung-Sheng Lin

IPC: H01L21/48 ,  C25D5/00 ,  H01L23/498 ,  H01L23/00 ,  H01L23/538

Abstract: In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

公开(公告)号：US20200373267A1

公开(公告)日：2020-11-26

申请号：US16989461

申请日：2020-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Fu Shih ,  Chun-Yen Lo ,  Cheng-Lin Huang ,  Wen-Ming Chen ,  Chien-Ming Huang ,  Yuan-Fu Liu ,  Yung-Chiuan Cheng ,  Wei-Chih Huang ,  Chen-Hsun Liu ,  Chien-Pin Chan ,  Yu-Nu Hsu ,  Chi-Hung Lin ,  Te-Hsun Pang ,  Chin-Yu Ku

IPC: H01L23/00 ,  C25D5/12 ,  C25D5/50 ,  C25D7/12 ,  C25D17/00 ,  C25D17/12 ,  C25D21/10

Abstract: External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.