公开(公告)号：US11011501B2

公开(公告)日：2021-05-18

申请号：US16103921

申请日：2018-08-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Yu-Chih Huang ,  Chia-Hung Liu ,  Ting-Ting Kuo ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Chi-Hui Lai

IPC分类号： H01L23/498 ,  H01L25/10 ,  H01L23/31 ,  H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

摘要： A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.

公开(公告)号：US10074615B1

公开(公告)日：2018-09-11

申请号：US15794003

申请日：2017-10-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ying-Cheng Tseng ,  Chih-Hua Chen ,  Hsiu-Jen Lin ,  Hao-Yi Tsai ,  Kuo-Chung Yee ,  Chia-Hung Liu

IPC分类号： H01L23/552 ,  H01L23/34 ,  H01L23/538 ,  H01L21/02

摘要： A package structure including at least one conductive plate, a redistribution layer, a first semiconductor chip, a conductive shielding structure and an insulating encapsulant is provided. The first semiconductor chip is sandwiched in between the at least one conductive plate and the redistribution layer, wherein the first semiconductor chip is disposed on the at least one conductive plate and electrically connected to the redistribution layer. The conductive shielding structure is sandwiched in between the at least one conductive plate and the redistribution layer, wherein the conductive shielding structure surrounds the first semiconductor chip and electrically connects the at least one conductive plate with the redistribution layer. The insulating encapsulant is disposed on the redistribution layer, encapsulating the first semiconductor chip, the conductive shielding structure, and surrounding the at least one conductive plate.

公开(公告)号：US20210098636A1

公开(公告)日：2021-04-01

申请号：US16747503

申请日：2020-01-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Yu-Chih Huang ,  Chih-Hao Chang ,  Chia-Hung Liu ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Po-Chun Lin

IPC分类号： H01L31/0203 ,  H01L31/18 ,  H01L31/024 ,  H01L31/02

摘要： A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided.

公开(公告)号：US20190341322A1

公开(公告)日：2019-11-07

申请号：US16517679

申请日：2019-07-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shih-Hao Tseng ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chia-Hung Liu

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L25/10 ,  H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L25/00 ,  H01L21/683

摘要： A semiconductor package includes an encapsulated semiconductor device, a redistribution structure, and a protection layer. The encapsulated semiconductor device includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. The redistribution structure is disposed on the encapsulated semiconductor device and includes a dielectric layer and a redistribution circuit layer electrically connected to the semiconductor device. The protection layer at least covers the dielectric layer, wherein an oxygen permeability or a water vapor permeability of the protection layer is substantially lower than an oxygen permeability or a vapor permeability of the dielectric layer.

公开(公告)号：US10361139B2

公开(公告)日：2019-07-23

申请号：US15884397

申请日：2018-01-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shih-Hao Tseng ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chia-Hung Liu

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

摘要： A semiconductor package includes an encapsulated semiconductor device, a redistribution structure, and a protection layer. The encapsulated semiconductor device includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. The redistribution structure is disposed on the encapsulated semiconductor device and includes a dielectric layer and a redistribution circuit layer electrically connected to the semiconductor device. The protection layer at least covers the dielectric layer, wherein an oxygen permeability or a water vapor permeability of the protection layer is substantially lower than an oxygen permeability or a vapor permeability of the dielectric layer.

公开(公告)号：US20200294912A1

公开(公告)日：2020-09-17

申请号：US16354173

申请日：2019-03-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Tsung-Hsien Chiang ,  Yu-Chih Huang ,  Chia-Hung Liu ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Po-Chun Lin

IPC分类号： H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/48 ,  H01L23/528 ,  H01L21/56 ,  H01L21/768

摘要： A package structure includes a die, a TIV, a first encapsulant, a RDL structure, a thermal dissipation structure and a second encapsulant. The die has a first surface and a second surface opposite to each other. The TIV is laterally aside the die. The first encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The RDL structure is disposed on the first surface of the die and on the first encapsulant, electrically connected to the die and the TIV. The thermal dissipation structure is disposed over the second surface of die and electrically connected to the die through the TIV and the RDL structure. The second encapsulant encapsulates sidewalls of the thermal dissipation structure.

公开(公告)号：US20200058626A1

公开(公告)日：2020-02-20

申请号：US16103921

申请日：2018-08-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Yu-Chih Huang ,  Chia-Hung Liu ,  Ting-Ting Kuo ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Chi-Hui Lai

IPC分类号： H01L25/10 ,  H01L23/498 ,  H01L23/31 ,  H01L25/00 ,  H01L21/48 ,  H01L21/56

摘要： A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.

公开(公告)号：US10510631B2

公开(公告)日：2019-12-17

申请号：US15706783

申请日：2017-09-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Hsuan Tai ,  Chih-Hua Chen ,  Hao-Yi Tsai ,  Yu-Chih Huang ,  Chia-Hung Liu ,  Ting-Ting Kuo

IPC分类号： H01L21/56 ,  H01L23/532 ,  H01L23/522 ,  H01L21/78 ,  H01L25/065 ,  H01L23/31 ,  H01L21/66 ,  H01L23/00

摘要： A package structure and a method of manufacturing the same are provided. The package structure includes a die, a redistribution layer (RDL) structure, a through integrated fan-out via (TIV) and a first connector. The RDL structure is connected to the die and includes a plurality of RDLs. The TIV is aside the die and penetrates through the RDL structure. The first connector is in electrical contact with the TIV and electrically connected to the die. The TIV is in electrical contact with the RDLs of the RDL structure.

公开(公告)号：US20190088564A1

公开(公告)日：2019-03-21

申请号：US15706783

申请日：2017-09-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Hsuan Tai ,  Chih-Hua Chen ,  Hao-Yi Tsai ,  Yu-Chih Huang ,  Chia-Hung Liu ,  Ting-Ting Kuo

IPC分类号： H01L23/31 ,  H01L21/66 ,  H01L23/00 ,  H01L25/065 ,  H01L21/56 ,  H01L21/78 ,  H01L23/532 ,  H01L23/522

摘要： A package structure and a method of manufacturing the same are provided. The package structure includes a die, a redistribution layer (RDL) structure, a through integrated fan-out via (TIV) and a first connector. The RDL structure is connected to the die and includes a plurality of RDLs. The TIV is aside the die and penetrates through the RDL structure. The first connector is in electrical contact with the TIV and electrically connected to the die. The TIV is in electrical contact with the RDLs of the RDL structure.

公开(公告)号：US11374136B2

公开(公告)日：2022-06-28

申请号：US16747503

申请日：2020-01-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Yu-Chih Huang ,  Chih-Hao Chang ,  Chia-Hung Liu ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Po-Chun Lin

IPC分类号： H01L31/0203 ,  H01L31/18 ,  H01L31/024 ,  H01L31/02

摘要： A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided.