公开(公告)号：US20200294912A1

公开(公告)日：2020-09-17

申请号：US16354173

申请日：2019-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Tsung-Hsien Chiang ,  Yu-Chih Huang ,  Chia-Hung Liu ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Po-Chun Lin

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/48 ,  H01L23/528 ,  H01L21/56 ,  H01L21/768

Abstract: A package structure includes a die, a TIV, a first encapsulant, a RDL structure, a thermal dissipation structure and a second encapsulant. The die has a first surface and a second surface opposite to each other. The TIV is laterally aside the die. The first encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The RDL structure is disposed on the first surface of the die and on the first encapsulant, electrically connected to the die and the TIV. The thermal dissipation structure is disposed over the second surface of die and electrically connected to the die through the TIV and the RDL structure. The second encapsulant encapsulates sidewalls of the thermal dissipation structure.

公开(公告)号：US11374136B2

公开(公告)日：2022-06-28

申请号：US16747503

申请日：2020-01-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Yu-Chih Huang ,  Chih-Hao Chang ,  Chia-Hung Liu ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Po-Chun Lin

IPC: H01L31/0203 ,  H01L31/18 ,  H01L31/024 ,  H01L31/02

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided.

公开(公告)号：US11004786B2

公开(公告)日：2021-05-11

申请号：US16354173

申请日：2019-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Tsung-Hsien Chiang ,  Yu-Chih Huang ,  Chia-Hung Liu ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Po-Chun Lin

IPC: H01L23/522 ,  H01L23/367 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/528 ,  H01L21/56 ,  H01L21/768

Abstract: A package structure includes a die, a TIV, a first encapsulant, a RDL structure, a thermal dissipation structure and a second encapsulant. The die has a first surface and a second surface opposite to each other. The TIV is laterally aside the die. The first encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The RDL structure is disposed on the first surface of the die and on the first encapsulant, electrically connected to the die and the TIV. The thermal dissipation structure is disposed over the second surface of die and electrically connected to the die through the TIV and the RDL structure. The second encapsulant encapsulates sidewalls of the thermal dissipation structure.

公开(公告)号：US20210098636A1

公开(公告)日：2021-04-01

申请号：US16747503

申请日：2020-01-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hsuan Tai ,  Hao-Yi Tsai ,  Yu-Chih Huang ,  Chih-Hao Chang ,  Chia-Hung Liu ,  Ban-Li Wu ,  Ying-Cheng Tseng ,  Po-Chun Lin

IPC: H01L31/0203 ,  H01L31/18 ,  H01L31/024 ,  H01L31/02

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided.