公开(公告)号：US20230402385A1

公开(公告)日：2023-12-14

申请号：US17837664

申请日：2022-06-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Hong LIN ,  Yinlung LU ,  Jun HE ,  An Shun TENG ,  Chun-Wei CHANG

IPC: H01L23/532 ,  H01L21/8234 ,  H01L27/088 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53295 ,  H01L21/823475 ,  H01L27/088 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53266 ,  H01L21/76843 ,  H01L21/76816 ,  H01L21/76807 ,  H01L23/5226 ,  H01L23/53276

Abstract: A graphene-clad metal interconnect extends material properties of graphene to both damascene and patterned interconnect structures at lower metal layers, leading to significant reductions in resistance. Graphene cladding can be used with or without a metal barrier/liner. Presence of a barrier/liner can serve to catalyze growth of an overlying graphene layer. Graphene may also be selectively grown on barrier surfaces. Fully integrated structures and process flows for integrated circuits with graphene-clad metallization are described.