Abstract:
The present invention is directed to a single chip color MOS image sensor with a novel two-line reading structure which is compatible with MOS fabrication technology. The invention allows the simultaneous reading of line signals from two adjacent rows of pixels so that combinations of signals from pixels in adjacent rows may be obtained without the use of an external delay line device. The sensor includes a pixel array having superimposed thereon an improved color filter pattern and a two-line reading structure which may be doubled so as to provide four line signals. The reading structure includes sets of storage capacitors on which the pixel signals are stored, and a means for reading the signals from the capacitors in such a way that signals from pixels in adjacent rows may be combined. The approximate ratios of the colors in the improved color filter pattern are one-half green, one-fourth yellow, and one-fourth cyan.
Abstract:
The present invention is directed to a single chip color CMOS image sensor with a novel two or more line reading structure which is compatible with MOS fabrication technology. The invention allows the simultaneous reading of line signals from two adjacent rows of pixels so that combinations of signals from pixels in adjacent rows may be obtained without the use of an external delay line device. The sensor includes a pixel array having superimposed thereon a color filter pattern and a two or more line reading structure. The reading structure includes sets of storage capacitors on which the pixel signals are stored, and a means for reading the signals from the capacitors in such a way that signals from pixels in adjacent rows may be combined. The reading structure is external to the pixel array but may still be fabricated on the same CMOS chip as the pixel array.
Abstract:
A charge amplifier with DC offset cancelling for use in a pixel element of an MOS image sensor is disclosed. The charge amplifier can be manufactured using a standard CMOS single polycrystalline process, making it much more cost effective than prior art designs. The charge amplifier includes an operational amplifier, a source capacitor, a series capacitor, and a feedback capacitor. The source capacitor holds the input signal. The output of the operational amplifier provides the output signal. Switches control the routing of the signal flow from the source capacitor, the series capacitor, and the feedback capacitor.
Abstract:
A charge amplifier with DC offset cancelling for use in a pixel element of an MOS image sensor is disclosed. The charge amplifier can be manufactured using a standard CMOS single polycrystalline process, making it much more cost effective than prior art designs. The charge amplifier includes an operational amplifier, a source capacitor, a series capacitor, and a feedback capacitor. The source capacitor holds the input signal. The output of the operational amplifier provides the output signal. Switches control the routing of the signal flow from the source capacitor, the series capacitor, and the feedback capacitor.
Abstract:
The present invention is directed to a single-chip color CMOS image sensor with a novel two or more line reading structure which is compatible with MOS fabrication technology. The invention allows the simultaneous reading of line signals from two rows of pixels so that combinations of signals from pixels in different rows may be obtained without the use of an external delay line device. The sensor includes a pixel array having superimposed thereon a color filter pattern and a two or more line reading structure. The reading structure includes sets of storage capacitors on which the pixel signals are stored, and a means for reading the signals from the capacitors in such a way that signals from pixels in different rows may be combined. The reading structure is external to the pixel array but may still be fabricated on the same CMOS chip as the pixel array. By using a high-sensitivity interlace color structure that allows complementary sets of every other row to be read during alternating even and odd fields, the sensitivity of the device as a whole can be effectively doubled.
Abstract:
An image acquisition and processing system that can eliminate or reduce the effects of offset voltage and threshold voltage is disclosed. The system contains a plurality of operational amplifiers each is used in an integrator. Each of the operational amplifiers has an offset voltage. The output of the integrator is sampled twice by a dual sampling circuit, one when connected to a photo-sensor and the other when not connected to the photo-sensor. The difference between the two samplings cancels out the effect of the offset voltage. The system also contains a plurality of transistors used as source follower. Each of the transistors is connected to an output terminal of the dual sampling circuit. These transistors have different threshold voltages. The output of a transistor is sampled. A predetermined voltage is then applied to the transistor and the output is again sampled. The difference between these two samples cancels out the effect of the threshold voltage. The effect of the predetermined voltage can be canceled out by taking a second difference between the twice sampled output originated from two transistors.
Abstract:
A charge amplifier with DC offset canceling for use in a pixel element of an MOS image sensor is disclosed. The charge amplifier can be manufactured using a standard CMOS single polycrystalline process, making it much more cost effective than prior art designs. The charge amplifier includes an operational amplifier, a source capacitor, a series capacitor, and a feedback capacitor. The source capacitor holds the input signal. The output of the operational amplifier provides the output signal. Switches control the routing of the signal flow from the source capacitor, the series capacitor, and the feedback capacitor.
Abstract:
A networking method of single frequency network in a TD-SCDMA system includes the steps of: (1) deciding a networking configuration scheme by a universal mobile telecommunications system terrestrial radio access network (UTRAN), (2) based on the decided networking configuration scheme, configuring an intra-frequency cell info list information element and an inter-frequency cell info list information element in system information and measurement control messages by the UTRAN, (3) transmitting signals over a servicing area by the UTRAN, and (4) receiving the system information and measurement control messages by a user equipment (UE) from the UTRAN, acquiring working mode configuration information of each frequency and each timeslot of a serving cell and neighboring cells, and judging whether there are duplicated cell information elements in the intra-frequency cell info list information element or the inter-frequency cell info list information element.
Abstract:
A solar energy collecting device includes a rotation axis to be mounted parallel to the earth's polar axis, a solar energy collector mounted for rotation around the rotation axis at a predetermined rotation speed, the solar energy collector defining a tilt angle with respect to the rotation axis, and a tilt angle adjustment mechanism for automatically and intermittently adjusting the tilt angle. Various configurations of the solar energy collector are possible, and the rotation speed may be one revolution per day or half a revolution per day depending on the solar energy collector configuration. Many drive modes are possible, including rotating continuously throughout a day or rotating during daylight hours and rotating backward or forward at night. The tilt angle adjustment mechanism includes a handle fixed to the solar energy collector and a tilt angle change guide.
Abstract:
Bubble stability within an optical switch is enhanced by controlling the expansion or movement of a bubble from a liquid-containing trench into available adjacent spacing. Typically, the adjacent spacing is formed between an optical waveguide substrate and a heater substrate, where the heater substrate includes a microheater for forming the bubble. The bubble enhancement is provided by intentionally altering surface features along at least one of the substrates.