公开(公告)号：US20240079373A1

公开(公告)日：2024-03-07

申请号：US18487068

申请日：2023-10-14

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Akira YAMAUCHI ,  Tadatomo SUGA

IPC分类号： H01L23/00

CPC分类号： H01L24/74 ,  H01L24/80 ,  H01L2224/8022

摘要： Bonding system for bonding a second article to a first article, comprising an activation treatment device that comprises an object supporter that supports objects comprising the second article, and a particle beam source that activates a bonding surface of the second article by irradiating the objects with a particle beam, the objects being set on one treatment surface without being opposed to each other, followed by performing activation treatment by the particle beam source; and a bond device that brings the second article, of which the bonding surface is activated by the activation treatment device, into contact with the first article, to thereby bond the second article to the first article, wherein the object supporter supports the objects in a posture in which a portion formed of a plurality of kinds of materials comprising the bonding surface of the second article in the objects is exposed to the particle beam source.

公开(公告)号：US20210265300A1

公开(公告)日：2021-08-26

申请号：US17269513

申请日：2018-11-14

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Akira YAMAUCHI ,  Tadatomo SUGA

IPC分类号： H01L23/00

摘要： A chip bonding system including an activation treatment device including a frame holder and a particle beam source that irradiates a sheet, to which a chip held by the frame holder is stuck, with a particle beam, to thereby activate a bonding surface of the chip; and a bonding device that brings the chip, of which the bonding surface is activated by the activation treatment device, into contact with a substrate, to thereby bond the chip to the substrate. The frame holder supports a holding frame in a posture in which one side, to which the chip is stuck, in the sheet, of the holding frame that holds the sheet TE, which is formed of a resin, and to which the chip is stuck, is exposed to the particle beam source.

公开(公告)号：US20240079374A1

公开(公告)日：2024-03-07

申请号：US18487071

申请日：2023-10-14

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Akira YAMAUCHI ,  Tadatomo SUGA

IPC分类号： H01L23/00

CPC分类号： H01L24/74 ,  H01L24/80 ,  H01L2224/8022

摘要： Bonding system that bonds each of a plurality of second articles to a first article, wherein each of the plurality of second articles is a chip comprising an uneven portion on a circumference closer to a bonding surface to be bonded to the first article, the bonding system comprises: a device for supplying a second article that supplies the plurality of second articles; a bond device that bonds the plurality of second articles to the first article by bringing the plurality of second articles into contact with the first article; and a device for transporting a second article that transports, to the bond device, at least one of the plurality of second articles supplied from the device for supplying a second article, and the device for transporting a second article comprises a holder for holding a second article that holds the uneven portion of the at least one second article.

公开(公告)号：US20240009984A1

公开(公告)日：2024-01-11

申请号：US18245895

申请日：2021-09-10

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Akira YAMAUCHI ,  Tadatomo SUGA

IPC分类号： B32B37/12 ,  B32B38/10 ,  B32B37/10

CPC分类号： B32B37/12 ,  B32B38/10 ,  B32B37/10 ,  B32B2309/04 ,  B32B2309/12 ,  B32B2310/14 ,  B32B2310/0881

摘要： A substrate bonding method for bonding two substrates includes an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of reactive ion etching using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface, a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time, and a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.

公开(公告)号：US20240066624A1

公开(公告)日：2024-02-29

申请号：US18262187

申请日：2022-01-21

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Akira YAMAUCHI ,  Tadatomo SUGA

IPC分类号： B23K20/24 ,  B23K20/00 ,  B23K20/02

CPC分类号： B23K20/24 ,  B23K20/008 ,  B23K20/023

摘要： A bonding method for bonding two substrates (W1, W2) includes: a heat treatment process of heating a bonding surface to be bonded to each other of each of the two substrates (W1, W2) to a temperature higher than 60° C. in a reduced-pressure atmosphere; an activation treatment process of activating the bonding surface of each of the two substrates (W1, W2) in a state of maintaining the reduced-pressure atmosphere after the heat treatment process; and a bonding process of bonding the two substrates (W1, W2) in a state of maintaining the reduced-pressure atmosphere after the activation treatment process. In the heat treatment process, the state of heating the bonding surface of each of the two substrates (W1, W2) to a temperature higher than 60° C. may be maintained for 30 seconds or more in a state of maintaining the reduced-pressure atmosphere. The gas pressure in the heat treatment process may be 10−2 Pa or less.

公开(公告)号：US20230136771A1

公开(公告)日：2023-05-04

申请号：US16347590

申请日：2017-11-06

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Akira YAMAUCHI ,  Tadatomo SUGA

IPC分类号： H01J37/32

摘要： The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

公开(公告)号：US20180068854A1

公开(公告)日：2018-03-08

申请号：US15810932

申请日：2017-11-13

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Tadatomo SUGA ,  Akira YAMAUCHI

IPC分类号： H01L21/18 ,  H01J37/32 ,  B23K20/00 ,  H05H1/46 ,  H01L21/02 ,  H05H3/02

CPC分类号： H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

摘要： A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

公开(公告)号：US20170047225A1

公开(公告)日：2017-02-16

申请号：US15306303

申请日：2015-04-24

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Tadatomo SUGA ,  Akira YAMAUCHI

IPC分类号： H01L21/18 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32

CPC分类号： H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

摘要： A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).

摘要翻译： 基板接合装置（100）包括真空室（200），用于激活第一基板（301）和第二基板（302）的各个结合面的表面活化部（610），以及台移动机构 ），用于使两个接合表面彼此接触，从而结合基板（301,302）。 为了激活真空室（200）中的接合表面，用用于激活接合表面的粒子束照射接合表面，并且同时接合表面也被硅颗粒照射。 由此，可以提高基板（301,302）的接合强度。

公开(公告)号：US20160084638A1

公开(公告)日：2016-03-24

申请号：US14923676

申请日：2015-10-27

申请人： BONDTECH CO., LTD.

发明人： Akira YAMAUCHI

IPC分类号： G01B11/14

CPC分类号： H01L24/75 ,  G01B11/14 ,  H01L23/544 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/757 ,  H01L2224/81009 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81204 ,  H01L2224/81801 ,  H01L2224/83121 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  H05K1/0269 ,  H05K3/303 ,  H05K2201/09918 ,  H05K2203/166 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A pressure application technique is provided that enables two objects to be pressurized (e.g., objects to be bonded) to be positioned with greater accuracy before having pressure applied thereto. The objects to be pressurized are moved relative to each other in a Z direction such that the objects are brought into contact with each other (step S13). Then, a horizontal positional shift ΔD between the objects to be pressurized is measured in the contact state of the objects to be pressurized (step S14). Thereafter, positioning of the objects to be pressurized is again performed by moving the objects to be pressurized relative to each other in the horizontal direction, as a result of which the positional shift ΔD is corrected (step S17).

摘要翻译： 提供了一种压力施加技术，其能够在施加压力之前使两个物体被加压（例如，待粘合的物体）以更高的准确度定位。 要加压的物体在Z方向上彼此相对移动，使得物体彼此接触（步骤S13）。 然后，在待加压物体的接触状态下测量待加压物体之间的水平位置移动量Dgr; D（步骤S14）。 此后，通过在水平方向上相对于彼此移动要加压的物体来再次执行要加压的物体的定位，结果校正位置偏移＆Dgr; D（步骤S17）。

公开(公告)号：US20240162063A1

公开(公告)日：2024-05-16

申请号：US18552650

申请日：2022-03-30

申请人： BONDTECH CO., LTD.

发明人： Akira YAMAUCHI

IPC分类号： H01L21/67 ,  H01L21/18 ,  H01L21/687

CPC分类号： H01L21/67092 ,  H01L21/187 ,  H01L21/67259 ,  H01L21/68764

摘要： A bonding device (1) includes a stage (141) to hold a substrate (W1), a head (142) arranged facing the stage (141) and configured to hold a substrate (W2), a head holder (111) to hold the head (142) on the opposite side to the stage (141) side of the head (142), the head holder (111) extending to the outer side of the head (142) and the stage (141) in a direction orthogonal to the Z-axis direction, three holder supports (1471) each to support the head holder (111) from one of three locations in an outer peripheral portion surrounding the stage (141), and three support drivers (146) to individually move the three holder supports (1471) in a −Z-direction in which the head holder (111) and the stage (141) come close to each other or a +Z-direction in which the head holder (111) and the stage (141) separate from each other.