公开(公告)号：US20170317162A1

公开(公告)日：2017-11-02

申请号：US15518616

申请日：2015-12-11

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Shinya NISHIMURA ,  Hirokazu FUJIWARA ,  Narumasa SOEJIMA ,  Yuichi TAKEUCHI

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/063 ,  H01L21/0465 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

Abstract: A semiconductor device includes a p-type semiconductor region in contact with a bottom face of a trench gate, wherein the p-type semiconductor region includes a first p-type semiconductor region containing a first type of p-type impurities and a second p-type semiconductor region containing a second type of p-type impurities. The first p-type semiconductor region is located between the trench gate and the second p-type semiconductor region. In a view along the depth direction, the second p-type semiconductor region is located within a part of the first p-type semiconductor region. A diffusion coefficient of the second type of p-type impurities is smaller than a diffusion coefficient of the first type of p-type impurities.

公开(公告)号：US20180090612A1

公开(公告)日：2018-03-29

申请号：US15664379

申请日：2017-07-31

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Hirokazu FUJIWARA ,  Yuichi TAKEUCHI ,  Narumasa SOEJIMA

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/7813 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/423 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66704 ,  H01L29/66734 ,  H01L29/7825

Abstract: A switching device includes a semiconductor substrate; a trench; a conductor layer extending in a longitudinal direction of the trench so as to be in contact with a bottom surface of the trench; a bottom insulating layer covering an upper surface of the conductor layer; a gate insulating layer covering a side surface of the trench; and a gate electrode disposed in the trench. The semiconductor substrate includes a first semiconductor region of a first conductivity type, a body region of a second conductivity type, a second semiconductor region of the first conductivity type, a bottom semiconductor region of the second conductivity type extending in the longitudinal direction so as to be in contact with the conductor layer, and a connection semiconductor region of the second conductivity type connected to the body region and to the bottom semiconductor region.