公开(公告)号：US11121310B2

公开(公告)日：2021-09-14

申请号：US16513173

申请日：2019-07-16

Applicant: TOHOKU UNIVERSITY

Inventor： Soshi Sato ,  Masaaki Niwa ,  Hiroaki Honjo ,  Shoji Ikeda ,  Hideo Ohno ,  Tetsuo Endo

IPC: H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L21/66

Abstract: A structure used in the formation of a spintronics element, the spintronics element to include a plurality of laminated layers, includes a substrate, a plurality of laminated layers formed on the substrate, an uppermost layer of the plurality of laminated layers being a non-magnetic layer containing oxygen, and a protection layer directly formed on the uppermost layer, the protection layer preventing alteration of characteristics of the uppermost layer while exposed in an atmosphere including H2O, a partial pressure of H2O in the atmosphere being equal to or larger than 10−4 Pa, no other layer being directly formed on the protection layer.

公开(公告)号：US11081641B2

公开(公告)日：2021-08-03

申请号：US16479153

申请日：2017-01-18

Applicant: TOHOKU UNIVERSITY

Inventor： Hiroaki Honjo ,  Tetsuo Endoh ,  Shoji Ikeda ,  Hideo Sato ,  Hideo Ohno

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16 ,  H01L27/12

Abstract: The present invention provides a magnetoresistance effect element which has a high thermal stability factor Δ and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a magnetic memory including the same. Magnetic layers of a recording layer of the magnetoresistance effect element are divided into at least two, and an Fe composition with respect to a sum total of atomic fractions of magnetic elements in each magnetic layer is changed before stacking the magnetic layers.

公开(公告)号：US10783936B2

公开(公告)日：2020-09-22

申请号：US16466812

申请日：2017-12-08

Applicant: Tohoku University

Inventor： Takahiro Hanyu ,  Daisuke Suzuki ,  Hideo Ohno ,  Tetsuo Endoh

IPC: G11C7/00 ,  G11C7/06 ,  G11C16/26

Abstract: In reading of a memory unit, an read failure operation due to variation in characteristic of a transistor in a dynamic load is reduced. A read circuit that reads a voltage obtained by a voltage division of a dynamic load unit and the memory unit as an output of the memory unit includes the dynamic load unit having one end connected to a side of a power supply and the other end connected to a side of the memory unit, and a feedback unit that, by a feedback of the voltage obtained by the voltage division that is divided between the dynamic load unit and the memory unit, holds the voltage obtained by the voltage division. The dynamic load unit has an array structure in which a plurality of resistive memory elements are connected in series, in parallel, or in series-parallel. The dynamic load unit has the array structure of the resistive memory elements and this structure can suppress the read failure operation due to the variation in dynamic load.

公开(公告)号：US10651369B2

公开(公告)日：2020-05-12

申请号：US15392556

申请日：2016-12-28

Applicant: TOHOKU UNIVERSITY

Inventor： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

IPC: H01L43/08 ,  G01R33/09 ,  G11C11/16 ,  G11B5/31 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

公开(公告)号：US10586580B2

公开(公告)日：2020-03-10

申请号：US16308166

申请日：2017-05-19

Applicant: TOHOKU UNIVERSITY

Inventor： Hiroaki Honjo ,  Shoji Ikeda ,  Hideo Sato ,  Tetsuo Endoh ,  Hideo Ohno

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L27/105 ,  H01L29/82 ,  H01L21/8239 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic tunnel junction element with a high tunnel magnetic resistance ratio can prevent a recording layer from being damaged. A reference layer includes a ferromagnetic body, and has magnetization direction fixed in the vertical direction. A barrier layer includes non-magnetic body, and disposed on one surface side of the reference layer. A recording layer is disposed to sandwich barrier layer between itself and reference layer. The recording layer includes a first ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in a vertical direction; a first non-magnetic layer including at least one of Mg, MgO, C, Li, Al, and Si, second non-magnetic layer including at least one of Ta, Hf, W, Mo, Nb, Zr, Y, Sc, Ti, V, and Cr, and second ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in a vertical direction.

公开(公告)号：US10424725B2

公开(公告)日：2019-09-24

申请号：US16013093

申请日：2018-06-20

Applicant: TOHOKU UNIVERSITY

Inventor： Soshi Sato ,  Masaaki Niwa ,  Hiroaki Honjo ,  Shoji Ikeda ,  Hideo Sato ,  Hideo Ohno ,  Tetsuo Endoh

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

Abstract: A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film.

公开(公告)号：US20190229262A1

公开(公告)日：2019-07-25

申请号：US16320260

申请日：2017-03-17

Applicant: TOHOKU UNIVERSITY

Inventor： Hiroaki Honjo ,  Shoji Ikeda ,  Hideo Sato ,  Tetsuo Endoh ,  Hideo Ohno

IPC: H01L43/12 ,  C23C14/34 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  C23C14/14

Abstract: A magnetic tunnel junction element configured by stacking, in a following stack order, a fixed layer formed of a ferromagnetic body and in which a magnetization direction is fixed, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body and in which the magnetization direction is fixed, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed by sandwiching an insertion layer formed of a nonmagnetic body between first and second ferromagnetic layers, wherein the magnetic coupling layer is formed using a sputtering gas in which a value of a ratio in which a mass number of an element used in the magnetic coupling layer divided by the mass number of the sputtering gas itself is 2.2 or smaller.

公开(公告)号：US20170365338A1

公开(公告)日：2017-12-21

申请号：US15128020

申请日：2015-03-24

Applicant: TOHOKU UNIVERSITY

Inventor： Takahiro Hanyu ,  Daisuke Suzuki ,  Masanori Natsui ,  Akira Mochizuki ,  Hideo Ohno ,  Tetsuo Endoh

IPC: G11C13/00 ,  G11C11/16

CPC classification number: G11C13/0064 ,  G11C11/1657 ,  G11C11/1675 ,  G11C11/1677 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0066 ,  G11C2013/0073 ,  G11C2013/0078 ,  G11C2013/0083

Abstract: A data-write device includes a write driver that causes a current to flow through a current path including an MTJ element or the other current path including the MTJ element in accordance with writing data to be written, thereby writing the write data into the MTJ element, a write completion detector which monitors the voltage at a first connection node or a second connection node in accordance with the write data after the writing of the write data into the MTJ element starts, detects the completion of writing of the write data based on the voltage at either node, and supplies a write completion signal indicating the completion of data write, and a write controller that terminates the writing of the write data into the MTJ element in response to the write completion signal supplied from the write completion detector.

公开(公告)号：US09564152B2

公开(公告)日：2017-02-07

申请号：US14224853

申请日：2014-03-25

Applicant: Tohoku University

Inventor： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

IPC: G11C11/16 ,  H01L43/08 ,  G11B5/31 ,  G01R33/09 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/31 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114

Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

Abstract translation: 提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。 磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如 磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。

公开(公告)号：US20140205862A1

公开(公告)日：2014-07-24

申请号：US14224853

申请日：2014-03-25

Applicant: Tohoku University

Inventor： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

IPC: G11B5/31

CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/31 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114

Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

Abstract translation: 提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。 磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如 磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。