公开(公告)号：US20180148842A1

公开(公告)日：2018-05-31

申请号：US15575360

申请日：2016-04-19

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Tatsuya MATSUMOTO ,  Keisuke WASHIO

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/44

CPC classification number: C23C16/50 ,  C23C16/308 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32486 ,  H01J37/32834 ,  H01J37/3288

Abstract: An apparatus for plasma atomic layer deposition includes a tubular, insulating injector adhesion preventive member mountable to a gas-introducing opening section from inside a film forming chamber, a tubular, insulating exhaust adhesion preventive member mountable to an exhaust opening section from inside the film forming chamber, and an insulating film forming chamber adhesion preventive member mountable to an inner wall side of the film forming chamber. The injector adhesion preventive member and the exhaust adhesion preventive member are separated from each of a plate electrode and a counter electrode side, and the film forming chamber adhesion preventive member is disposed on each side of the injector adhesion preventive member and the exhaust adhesion preventive member to be separated from each of the plate electrode and the counter electrode side. The apparatus further includes an upper and lower inert-gas supply port that purges inert gas toward inside the film forming chamber.

公开(公告)号：US20240117190A1

公开(公告)日：2024-04-11

申请号：US18237113

申请日：2023-08-23

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Ryo YAMAWAKI

IPC: C09B57/00 ,  C07F9/11 ,  C07F9/12 ,  C07F9/30 ,  C07F9/38 ,  C08K5/523 ,  C08K5/5357

CPC classification number: C09B57/00 ,  C07F9/11 ,  C07F9/12 ,  C07F9/304 ,  C07F9/3808 ,  C07F9/3882 ,  C07F9/3891 ,  C08K5/523 ,  C08K5/5357 ,  G02B5/208

Abstract: Provided is a light absorbing agent that excels in miscibility with a resin, a method of manufacturing such a light absorbing agent, a composition that excels in dispersiveness of such a light absorbing agent, and an optical member that excels in visible light transmitting performance and near-infrared radiation blocking performance. The light absorbing agent contains a compound expressed by Formula (1) below and a copper ion.




In the above, R1 is a group expressed by Formula (2) above, R10 is an alkylene group or arylene group that may have a substituent, R12 is an alkylene group or arylene group that may have a substituent, and the other symbols are as described in the specification.

公开(公告)号：US20200010949A1

公开(公告)日：2020-01-09

申请号：US16490530

申请日：2017-10-31

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Masaki CHIBA ,  Masao NAKATA

IPC: C23C16/04 ,  H01L51/52 ,  H01L51/56 ,  C23C16/455

Abstract: In order to suppress a film from being formed in a gap between a mask and a substrate, a technology of improving adhesion between the mask and the substrate is provided. A film-forming method includes the step of suspending a mask MK by a suspension portion HU in a state in which the suspension portion HU is supported by a supporting portion SU and the step of bringing the mask MK suspended by the suspension portion HU into contact with a glass substrate GS in the state in which the suspension portion HU is supported by the supporting portion SU.

公开(公告)号：US20190019657A1

公开(公告)日：2019-01-17

申请号：US16032033

申请日：2018-07-10

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Masao NAKATA

IPC: H01J37/32 ,  C23C16/455

Abstract: A film quality of a film formed on a substrate is improved. A plasma atomic layer deposition apparatus has a lower electrode holding the substrate, and an upper electrode having an opposite surface opposed to the lower electrode and generating plasma discharge between the upper electrode and the lower electrode. Further, the plasma atomic layer deposition apparatus has a conductive deposition preventing member fixed to the opposite surface of the upper electrode by a plurality of screws, and other conductive deposition preventing member fixed to the conductive deposition preventing member by a plurality of others screws. At this time, in a plan view, the plurality of screws and the plurality of other screws are arranged so as not to overlap each other.

公开(公告)号：US20210166922A1

公开(公告)日：2021-06-03

申请号：US17149696

申请日：2021-01-14

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Masao NAKATA ,  Tatsuya MATSUMOTO ,  Junichi SHIDA

IPC: H01J37/32 ,  C23C16/04 ,  C23C16/455 ,  H01L51/52 ,  H01L51/56 ,  C23C16/40 ,  H01L21/31 ,  H01L21/02

Abstract: In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

公开(公告)号：US20200013593A1

公开(公告)日：2020-01-09

申请号：US16490529

申请日：2017-10-31

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Masao NAKATA ,  Tatsuya MATSUMOTO ,  Junichi SHIDA

IPC: H01J37/32 ,  H01L51/52 ,  H01L51/56 ,  C23C16/455 ,  C23C16/04

Abstract: In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

公开(公告)号：US20200006706A1

公开(公告)日：2020-01-02

申请号：US16490541

申请日：2017-10-31

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Tatsuya MATSUMOTO ,  Takashi EBISAWA ,  Junichi SHIDA

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56 ,  H01L27/32 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40

Abstract: A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting film 16 made of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film 16, the protecting film 16 is formed by alternately performing a step of forming a high-density layer 16H by using an ALD method and a step of forming, by using an ALD method, a low-density layer 16L that has the same constituent element as the high-density layer 16H and has a lower density than the high-density layer 16H. The protecting film 16 has a layered structure made of one or more high-density layers 16H and one or more low-density layers 16L so that the low-density layer 16L and the high-density layer 16H are alternately layered so as to be in contact with each other.

公开(公告)号：US20190211448A1

公开(公告)日：2019-07-11

申请号：US16328269

申请日：2017-04-24

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Tatsuya MATSUMOTO

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/44 ,  C23C16/45527 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31 ,  H01L51/50 ,  H05B33/04 ,  H05B33/10

Abstract: An atomic layer deposition apparatus includes: a film-forming container 11 in which a film-forming process is performed; a vertically movable stage 14 provided in the film-forming container 11 and being configured to hold a substrate 100; a stage stopper 17 configured to stop rising of the stage 14 and, when in contact with the stage 14, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate 100 is performed; a peripheral stage deposition prevention member 15 covering a peripheral portion of the stage 14; and a stage stopper deposition prevention member 24 provided on the stage stopper 17.

公开(公告)号：US20210135169A1

公开(公告)日：2021-05-06

申请号：US16492143

申请日：2018-03-07

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Tatsuya MATSUMOTO ,  Toru MASHITA ,  Masamitsu TORAMARU

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: An object is to improve performance of a protection film for an organic EL device. A forming method of the protection film for an organic EL device includes the steps of: (a) forming an organic EL device over a flexible substrate; and (b) forming a protection film including an SiOC film so as to cover the organic EL device. Moreover, the SiOC film is formed by an ALD method using a compound containing Si and C as a material, the compound containing Si and C has at least one or more C atoms in a main chain between Si atom and Si atom, and amino groups are respectively bonded to the Si atoms on both ends of the main chain. According to this method, carbon (C) can be effectively taken into an SiO film to be formed. This SiOC film has a moisture barrier property and flexibility. Thus, it is possible to protect the organic EL device from moisture, and its bending resistance can be improved. Moreover, the degree of flexibility can be adjusted by adjusting the number of C atoms in the main chain between Si atom and Si atom.

公开(公告)号：US20200063260A1

公开(公告)日：2020-02-27

申请号：US16538043

申请日：2019-08-12

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Keisuke WASHIO ,  Toru MASHITA

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/44 ,  H01L21/687

Abstract: An atomic layer deposition apparatus includes a chamber, a stage which is disposed in the chamber and over which a substrate is placed, an opening which is provided in a side wall of the chamber, an opening and closing part which is connected to the opening, and a movable adhesion preventing member disposed in the chamber. The opening is an opening for transferring the substrate. The adhesion preventing member is located at a position where it covers the opening in a state where the opening and closing part is closed.