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公开(公告)号：US20240077514A1
公开(公告)日：2024-03-07
申请号：US18507150
申请日：2023-11-13
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Scott Robert SUMMERFELT , Benjamin Stassen COOK
Abstract: A method comprises receiving a signal from a piezoelectric device and receiving a measurement of a temperature of the piezoelectric device. The method further comprises reading a first parameter from a memory, in which the first parameter depends on the temperature and relates the signal to an acceleration value and reading a second parameter from the memory, in which the second parameter represents a degree of drift of the piezoelectric device at the temperature. The method further comprises determining an acceleration of the piezoelectric device based on the signal, the first parameter, and the second parameter.
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公开(公告)号：US20210199688A1
公开(公告)日：2021-07-01
申请号：US16856488
申请日：2020-04-23
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Scott Robert SUMMERFELT , Benjamin Stassen COOK
Abstract: A method includes measuring a first signal from a set of pyroelectric devices at a first temperature and measuring a second signal from a set of piezoelectric devices at a first acceleration. The method also includes measuring a third signal from the set of pyroelectric devices at a second temperature and measuring a fourth signal from the set of piezoelectric devices at a second acceleration. The method further includes adjusting a piezoelectric calibration using the first, second, third, and fourth signals.
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公开(公告)号：US20220406956A1
公开(公告)日：2022-12-22
申请号：US17680981
申请日：2022-02-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Swaminathan SANKARAN , Baher HAROUN , Gerd SCHUPPENER , Scott Robert SUMMERFELT , Benjamin COOK
IPC: H01L31/173 , H01L49/02
Abstract: An integrated circuit (IC) includes a substrate having a first surface and a second surface opposite the first surface. The substrate has a first region containing a first circuit and a second region containing a second circuit. The first circuit operates at a first supply voltage. The second circuit operates at a second supply voltage. The second supply voltage is higher than the first supply voltage. The IC includes a through wafer trench (TWT) extending from the first surface of the substrate to the second surface of the semiconductor substrate. The TWT separates the first region from the second region. A dielectric material is in the TWT. An interconnect region has layers of dielectric on the first surface of the substrate. The interconnect region is continuous over the first region, the second region, and the TWT. A non-galvanic communication channel is between the first and second circuits.
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公开(公告)号：US20230133993A1
公开(公告)日：2023-05-04
申请号：US17515296
申请日：2021-10-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Hassan Omar ALI , Benjamin Stassen COOK , Scott Robert SUMMERFELT , Jo BITO
Abstract: An optical device includes a metamaterial layer configured to absorb a portion of an incident light having a frequency spectrum, the portion of the incident light having a frequency range that is narrower than and within the frequency spectrum of the incident light, a photodiode disposed in a layer coupled to the metamaterial layer and configured to detect an amplitude of the portion of the incident light, and shallow trench isolation (STI) structures disposed between the metamaterial layer and the photodiode, the STI structures configured to pass the portion of the incident light within the frequency range from the metamaterial layer to the photodiode.
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公开(公告)号：US20220359268A1
公开(公告)日：2022-11-10
申请号：US17683201
申请日：2022-02-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
IPC: H01L21/762
Abstract: Disclosed herein is an integrated circuit (IC) comprising a semiconductor wafer, a dielectric layer, and an isolation element. The semiconductor wafer has a first wafer portion and a second wafer portion each extending from a frontside surface to a backside surface. The dielectric layer interfaces with the first wafer portion and with the second wafer portion each on the frontside surface. The isolation element has an isolation dielectric material, and the isolation element extends between a first side surface of the first wafer portion and a second side surface of the second wafer portion and from an extension plane of the frontside surface to an extension plane of the backside surface. Also disclosed herein is a system comprising the IC and a package substrate coupled to the IC.
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Patent Agency Ranking
公开(公告)号：US20220324702A1
公开(公告)日：2022-10-13
申请号：US17514282
申请日：2021-10-29
Applicant: Texas Instruments Incorporated
Inventor： Scott Robert SUMMERFELT , Adam Joseph FRUEHLING
Abstract: A micro-electromechanical system (MEMS) device includes a moveable element within a cavity. The MEMS device also includes a first layer over the cavity, the first layer having a first hole and a second hole. The first hole has a first diameter. The second hole has a second diameter. The second diameter is larger than the first diameter, and the second hole is farther from the moveable element than the first hole. The first hole is sealed with a first dielectric material. The second hole is sealed with a second dielectric material. The cavity filled with a gas at a pressure of at least approximately 10 torr.
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公开(公告)号：US20220406738A1
公开(公告)日：2022-12-22
申请号：US17732822
申请日：2022-04-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Swaminathan SANKARAN , Adam FRUEHLING , Baher HAROUN , Scott Robert SUMMERFELT , Benjamin Stassen COOK
Abstract: An integrated circuit (IC) includes a semiconductor substrate having a first surface and a second surface opposite the first surface. A through wafer trench (TWT) extends from the first surface of the semiconductor substrate to the second surface of the semiconductor substrate. Dielectric material is in the TWT. An interconnect region has layers of dielectric on the first surface of the substrate. The interconnect region has a conductive transmit patch. An antenna is formed, at least in part, by the dielectric material in the TWT and the transmit patch in the interconnect region. The antenna is configured to transmit or receive electromagnetic radiation between the transmit patch and the second surface of the semiconductor substrate through the dielectric material within the trench.
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公开(公告)号：US20220406649A1
公开(公告)日：2022-12-22
申请号：US17681029
申请日：2022-02-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Swaminathan SANKARAN , Scott Robert SUMMERFELT , Benjamin COOK
IPC: H01L21/762 , H01L21/768 , H01L21/02 , H01L27/01
Abstract: An integrated circuit (IC) includes a semiconductor substrate and an interconnect region. The semiconductor substrate has a first surface and a second surface opposite the first surface. The semiconductor substrate has a first region with a passive component. The semiconductor substrate has a second region outside the first region. The resistance of the second region is smaller than the resistance of the first region. The interconnection region is on the second surface of the semiconductor substrate.
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公开(公告)号：US20220252637A1
公开(公告)日：2022-08-11
申请号：US17732475
申请日：2022-04-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Scott Robert SUMMERFELT , Benjamin Stassen COOK
Abstract: A method includes measuring a temperature of a semiconductor die, in which the semiconductor die includes a piezoelectric device, a pyroelectric device, and a memory. The method further includes receiving a first signal from the pyroelectric device, and based on the first signal, determining a parameter to be combined with a second signal from the piezoelectric device. The method further includes storing the parameter and the measured temperature into the memory.
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公开(公告)号：US20220246423A1
公开(公告)日：2022-08-04
申请号：US17588589
申请日：2022-01-31
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Nicholas S. DELLAS, JR. , Scott Robert SUMMERFELT
IPC: H01L21/02 , H01L21/304 , H01L21/324
Abstract: A method includes depositing a first epitaxial layer of an aluminum gallium nitride (AlGaN) material onto a preliminary substrate and polishing the first layer's surface. Ions are implanted beneath the surface, which is bonded to a seed insulating substrate. Annealing is performed, resulting in second epitaxial layer on preliminary substrate and third epitaxial layer on seed insulating substrate. Third layer's surface is polished to obtain a seed wafer. In some implementations, a fourth epitaxial layer of a second AlGaN material is deposited onto surface of third layer. Fourth layer's surface is polished, and ions are implanted beneath the surface, which is bonded to a product insulating substrate. Annealing is performed, resulting in fifth epitaxial layer on seed insulating substrate and sixth epitaxial layer on product insulating substrate. The sixth layer can be used to obtain an AlGaN product, and the fifth layer can be reused to fabricate additional AlGaN products.
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