公开(公告)号：US20240282820A1

公开(公告)日：2024-08-22

申请号：US18638134

申请日：2024-04-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Yi PENG ,  Ting TSAI ,  Chung-Wei HUNG ,  Jung-Ting CHEN ,  Ying-Hua LAI ,  Song-Bor LEE ,  Bor-Zen TIEN

IPC: H01L29/08 ,  H01L21/02 ,  H01L21/265 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L29/24 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/26513 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.

公开(公告)号：US20210359085A1

公开(公告)日：2021-11-18

申请号：US17385031

申请日：2021-07-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Cheng-Yi PENG ,  Ting TSAI ,  Chung-Wei HUNG ,  Jung-Ting CHEN ,  Ying-Hua LAI ,  Song-Bor LEE ,  Bor-Zen TIEN

IPC: H01L29/08 ,  H01L29/24

Abstract: A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.