公开(公告)号：US12027625B2

公开(公告)日：2024-07-02

申请号：US18070285

申请日：2022-11-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shu-Hao Kuo ,  Jung-Hao Chang ,  Chao-Hsien Huang ,  Li-Te Lin ,  Kuo-Cheng Ching

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/7853 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/76229 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/66803 ,  H01L21/02532 ,  H01L21/0262 ,  H01L2029/7858

摘要： A method includes providing a semiconductor structure including a first semiconductor substrate, an insulator layer over the first semiconductor substrate, and a second semiconductor substrate over the insulator layer; patterning the second semiconductor substrate to form a top fin portion over the insulator layer; conformally depositing a protection layer to cover the top fin portion, wherein a first portion of the protection layer is in contact with a top surface of the insulator layer; etching the protection layer to remove a second portion of the protection layer directly over the top fin portion while a third portion of the protection layer still covers a sidewall of the top fin portion; etching the insulator layer by using the third portion of the protection layer as an etch mask; and after etching the insulator layer, removing the third portion of the protection layer.

公开(公告)号：US11515423B2

公开(公告)日：2022-11-29

申请号：US16880864

申请日：2020-05-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shu-Hao Kuo ,  Jung-Hao Chang ,  Chao-Hsien Huang ,  Li-Te Lin ,  Kuo-Cheng Ching

IPC分类号： H01L29/78 ,  H01L21/306 ,  H01L29/66 ,  H01L29/417 ,  H01L27/12 ,  H01L21/84 ,  H01L21/3065 ,  H01L29/06 ,  H01L21/762 ,  H01L21/311 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/02

摘要： A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion. A top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin. The isolation structure surrounds the bottom portion of the first fin.

公开(公告)号：US10680109B2

公开(公告)日：2020-06-09

申请号：US16141509

申请日：2018-09-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shu-Hao Kuo ,  Jung-Hao Chang ,  Chao-Hsien Huang ,  Li-Te Lin ,  Kuo-Cheng Ching

IPC分类号： H01L29/66 ,  H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L27/12 ,  H01L21/84 ,  H01L21/306 ,  H01L29/06 ,  H01L21/762 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/02

摘要： A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion. A top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin. The isolation structure surrounds the bottom portion of the first fin.