- 专利标题： Semiconductor device having fins and method of fabricating the same
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申请号： US18070285申请日： 2022-11-28
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公开(公告)号： US12027625B2公开(公告)日： 2024-07-02
- 发明人: Shu-Hao Kuo , Jung-Hao Chang , Chao-Hsien Huang , Li-Te Lin , Kuo-Cheng Ching
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 分案原申请号： US16141509 2018.09.25
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L21/311 ; H01L21/762 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12 ; H01L29/06 ; H01L29/417 ; H01L29/66
摘要：
A method includes providing a semiconductor structure including a first semiconductor substrate, an insulator layer over the first semiconductor substrate, and a second semiconductor substrate over the insulator layer; patterning the second semiconductor substrate to form a top fin portion over the insulator layer; conformally depositing a protection layer to cover the top fin portion, wherein a first portion of the protection layer is in contact with a top surface of the insulator layer; etching the protection layer to remove a second portion of the protection layer directly over the top fin portion while a third portion of the protection layer still covers a sidewall of the top fin portion; etching the insulator layer by using the third portion of the protection layer as an etch mask; and after etching the insulator layer, removing the third portion of the protection layer.
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