公开(公告)号：US09698263B2

公开(公告)日：2017-07-04

申请号：US14945542

申请日：2015-11-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Lai-Wan Chong ,  Wen-Chu Hsiao ,  Ying-Min Chou ,  Hsiang-Hsiang Ko

IPC: H01L29/04 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/02 ,  H01L29/165 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161

CPC classification number: H01L29/7848 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/04 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78

Abstract: A semiconductor structure that includes crystalline surfaces and amorphous hydrophilic surfaces is provided. The hydrophilic surfaces are treated with silane that includes a hydrophobic functional group, converting the hydrophilic surfaces to hydrophobic surfaces. Chemical vapor deposition or other suitable deposition methods are used to simultaneously deposit a material on both surfaces and due to the surface treatment, the deposited material exhibits superior adherence qualities on both surfaces. In one embodiment, the structure is an opening formed in a semiconductor substrate and bounded by at least one portion of a crystalline silicon surface and at least one portion of an amorphous silicon oxide structure.