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公开(公告)号：US20230161261A1
公开(公告)日：2023-05-25
申请号：US17745576
申请日：2022-05-16
发明人： Wei-Hao LEE , Pei-Cheng HSU , Huan-Ling LEE , Ta-Cheng LIEN , Hsin-Chang LEE , Chin-Hsiang LIN
IPC分类号： G03F7/20
CPC分类号： G03F7/70033
摘要： Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.
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公开(公告)号：US20230012705A1
公开(公告)日：2023-01-19
申请号：US17581671
申请日：2022-01-21
发明人： An-Ren ZI , Yahru CHENG , Ching-Yu CHANG , Chin-Hsiang LIN
IPC分类号： H01L21/027 , H01L21/308
摘要： A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.
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公开(公告)号：US20210159087A1
公开(公告)日：2021-05-27
申请号：US16697988
申请日：2019-11-27
发明人： Yen-Hao CHEN , Wei-Han LAI , Ching-Yu CHANG , Chin-Hsiang LIN
IPC分类号： H01L21/321 , H01L21/027 , H01L21/02
摘要： A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.
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公开(公告)号：US20200301280A1
公开(公告)日：2020-09-24
申请号：US16898681
申请日：2020-06-11
发明人： An-Ren ZI , Ching-Yu CHANG , Chin-Hsiang LIN
IPC分类号： G03F7/11 , H01L21/027 , G03F7/004 , G03F7/20 , H01L29/66 , G03F7/32 , G03F7/038 , G03F7/09 , H01L21/266 , G03F7/38 , G03F7/039 , G03F7/075
摘要： A method for forming a semiconductor device structure is provided. The method includes forming an assist layer over a material layer. The assist layer includes a first polymer with a first polymer backbone, a floating group bonded to the first polymer backbone, and the floating group includes carbon fluoride (CxFy), and a second polymer. The method includes forming a resist layer over the assist layer, and the first polymer is closer to an interface between the assist layer and the resist layer than the second polymer. The method also includes patterning the resist layer
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公开(公告)号：US20200272051A1
公开(公告)日：2020-08-27
申请号：US16584234
申请日：2019-09-26
发明人： Chun-Chih HO , Ching-Yu CHANG , Chin-Hsiang LIN
摘要： A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.
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公开(公告)号：US20200264515A1
公开(公告)日：2020-08-20
申请号：US16866188
申请日：2020-05-04
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
IPC分类号： G03F7/20
摘要： A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.
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公开(公告)号：US20200073250A1
公开(公告)日：2020-03-05
申请号：US16547317
申请日：2019-08-21
发明人： An-Ren ZI , Chin-Hsiang LIN , Ching-Yu CHANG
IPC分类号： G03F7/20
摘要： A method of cleaning an extreme ultraviolet lithography collector includes applying a cleaning composition to a surface of the extreme ultraviolet lithography collector having debris on the surface of the collector in an extreme ultraviolet radiation source chamber. The cleaning composition includes: a major solvent having Hansen solubility parameters of 25>δd>15, 25>δp>10, and 30>δh>6; and an acid having an acid dissociation constant, pKa, of −15
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公开(公告)号：US20200057375A1
公开(公告)日：2020-02-20
申请号：US16534965
申请日：2019-08-07
发明人： Shinn-Sheng YU , Ru-Gun LIU , Hsu-Ting HUANG , Chin-Hsiang LIN
摘要： An extreme ultraviolet lithography (EUVL) method includes providing at least two phase-shifting mask areas having a same pattern. A resist layer is formed over a substrate. An optimum exposure dose of the resist layer is determined, and a latent image is formed on a same area of the resist layer by a multiple exposure process. The multiple exposure process includes a plurality of exposure processes and each of the plurality of exposure processes uses a different phase-shifting mask area from the at least two phase-shifting mask areas having a same pattern.
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公开(公告)号：US20190341254A1
公开(公告)日：2019-11-07
申请号：US16512336
申请日：2019-07-15
发明人： Shih-Chun HUANG , Chin-Hsiang LIN , Chien-Wen LAI , Ru-Gun LIU , Wei-Liang LIN , Ya Hui CHANG , Yung-Sung YEN , Yu-Tien SHEN , Ya-Wen YEH
IPC分类号： H01L21/033 , H01L21/311 , H01L21/3213 , H01L21/768 , H01L21/3105
摘要： A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a plurality of openings in the multi-layer resist to expose a portion of the hard mask layer. Ion are directionally provided at an angle to the multi-layer resist to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In one embodiment, the multi-layer resist is directionally etched by directing etch ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In another embodiment, the multi-layer resist is directionally implanted by directing implant ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer.
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公开(公告)号：US20190146337A1
公开(公告)日：2019-05-16
申请号：US15938599
申请日：2018-03-28
发明人： An-Ren ZI , Chin-Hsiang LIN , Ching-Yu CHANG , Joy CHENG
IPC分类号： G03F7/004 , H01L21/027 , G03F7/32 , H01L21/47
摘要： A photoresist developer includes a solvent having Hansen solubility parameters of 25 pKa>9.5; and a chelate.
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