公开(公告)号：US20250085623A1

公开(公告)日：2025-03-13

申请号：US18404776

申请日：2024-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Huan-Ling LEE ,  Hsin-Chang LEE ,  Chin-Kun WANG

IPC: G03F1/62 ,  H01L21/027

Abstract: A pellicle comprising a pellicle membrane with improved stability to hydrogen plasma is provided. The pellicle membrane includes a network of a plurality of carbon nanotubes. At least one carbon nanotube of the plurality of carbon nanotubes is surrounded by a multilayer protective coating that includes a stress control layer and a hydrogen permeation barrier layer over the stress control layer. The stress control layer and the hydrogen permeation barrier layer independently include an Me-containing nitride or an Me-containing oxynitride with Me selected from the group consisting of Si, Ti, Y, Hf, Zr, Zn, Mo, Cr and combinations thereof. The Me-containing nitride or the Me-containing oxynitride in the stress control layer has a first Me concentration, and the Me-containing nitride or the Me-containing oxynitride in the hydrogen permeation barrier layer has a second Me concentration less than the first Me concentration.

公开(公告)号：US20210341829A1

公开(公告)日：2021-11-04

申请号：US16863939

申请日：2020-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chang HSUEH ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/60 ,  G03F1/80

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

公开(公告)号：US20210232055A1

公开(公告)日：2021-07-29

申请号：US17129841

申请日：2020-12-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Wei CHEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN

IPC: G03F7/20

Abstract: A mask for cleaning a lithography apparatus includes a mask substrate and a coating provided on a surface of the mask substrate. The coating is configured to trap particulate contaminant matter from the lithography apparatus. A method of cleaning a lithography tool is also provided preparing a cleaning mask including a particle trapping layer formed on a substrate. The method includes transferring the cleaning mask through a mask transferring route of the lithography tool. Subsequently, the method includes analyzing a particle trapped by the particle trapping layer.

公开(公告)号：US20210055646A1

公开(公告)日：2021-02-25

申请号：US17080652

申请日：2020-10-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Cheng CHEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Shih-Ming CHANG ,  Tran-Hui SHEN ,  Yen-Cheng HO ,  Chen-Shao HSU

IPC: G03F1/36 ,  G03F1/76 ,  G03F1/78

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

公开(公告)号：US20180292744A1

公开(公告)日：2018-10-11

申请号：US16010118

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Yun-Yue LIN ,  Hsuan-Chen CHEN ,  Hsuan-I WANG ,  Anthony YEN

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/2004

Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.

公开(公告)号：US20230236496A1

公开(公告)日：2023-07-27

申请号：US17749675

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Huan-Ling LEE ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

IPC: G03F1/64 ,  C01B32/162 ,  C01B32/174

CPC classification number: G03F1/64 ,  C01B32/162 ,  C01B32/174 ,  B82Y40/00

Abstract: A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transferring the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, growing boron nitride nanotubes (BNNTs) to surround individual CNTs in a second reaction zone of the reactor downstream of the first reaction zone, thereby forming heterostructure nanotubes each including a CNT core and a BNNT shell, and collecting the heterostructure nanotubes on the filter membrane. The metal catalyst particles are partially or completely removed during growing the BNNTs.

公开(公告)号：US20230161241A1

公开(公告)日：2023-05-25

申请号：US17749033

申请日：2022-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Wei-Hao LEE ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Ching-Fang YU

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.

公开(公告)号：US20230152681A1

公开(公告)日：2023-05-18

申请号：US18151416

申请日：2023-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/22

Abstract: A method includes forming a multi-layered reflective layer over a substrate; depositing a metal capping layer over the multi-layered reflective layer; depositing a first metal oxide layer over the metal capping layer; depositing a metal nitride layer over the first metal oxide layer; depositing a second metal oxide layer over the metal nitride layer; forming a plurality of features on the second metal oxide layer and the metal nitride layer.

公开(公告)号：US20220221785A1

公开(公告)日：2022-07-14

申请号：US17707712

申请日：2022-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chang HSUEH ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

公开(公告)号：US20220137499A1

公开(公告)日：2022-05-05

申请号：US17331517

申请日：2021-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a patterned absorber layer on the reflective multilayer stack is provided. The patterned absorber layer includes an alloy comprising tantalum and at least one alloying element. The at least one alloying element includes at least one transition metal element or at least one Group 14 element.