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公开(公告)号：US20190163046A1
公开(公告)日：2019-05-30
申请号：US16151300
申请日：2018-10-03
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
摘要： A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.
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公开(公告)号：US20190137866A1
公开(公告)日：2019-05-09
申请号：US15906586
申请日：2018-02-27
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
摘要： A reticle used for collecting information for image-error compensation is provided. The reticle includes a first black border structure and a second black border structure formed over a substrate. The first and second black borders are concentric with a center of the substrate. The reticle further includes a first image structure and a second image structure formed over the substrate. The first and second image structures each has patterns representing features to be patterned on a semiconductor wafer. In a direction away from the center of the substrate, the second image structure, the second black border structure, the first image structure and the first black border structure are arranged in order.
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公开(公告)号：US20200264515A1
公开(公告)日：2020-08-20
申请号：US16866188
申请日：2020-05-04
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
IPC分类号： G03F7/20
摘要： A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.
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公开(公告)号：US20200350306A1
公开(公告)日：2020-11-05
申请号：US16933127
申请日：2020-07-20
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
摘要： A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer are calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the second portion equals a penumbra size of the exposure manufacturing process, and the penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout. The patterned layer includes a plurality of absorbers, and a first width of the absorbers is the first portion is less than a second width of the absorbers in the second portion the second portion.
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公开(公告)号：US20200348586A1
公开(公告)日：2020-11-05
申请号：US16927131
申请日：2020-07-13
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
摘要： A method for collecting information in image-error compensation is provided. The method includes providing a reticle having a first image structure and a second image structure; moving a light shading member to control a first exposure field; projecting a light over the first exposure field; recording an image of the first image structure after the light is projected; moving the light shading member to control a second exposure field; projecting the light over the second exposure field; and recording an image of the second image structure after the light is projected.
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公开(公告)号：US20190131290A1
公开(公告)日：2019-05-02
申请号：US15797842
申请日：2017-10-30
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
CPC分类号： H01L27/0207 , G06F17/5009 , G06F17/5045 , G06F17/5068 , G06F2217/12 , H01L27/0203
摘要： A layout modification method for fabricating an integrated circuit is provided. The layout modification method includes calculating uniformity of critical dimension of a patterned layer with a layout for an exposure manufacturing process to produce a semiconductor device. The patterned layer is divided into a first portion and a second portion which is adjacent to the first portion, and a width of the second portion equals to a penumbra size of the exposure manufacturing process. The layout modification method further includes retrieving an adjusting parameter for modifying the layout of the semiconductor device; determining a compensation amount based on the adjusting parameter and the uniformity of critical dimension; and compensating the critical dimension of the second portion of the patterned layer by utilizing the compensation amount to generate a modified layout.
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