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公开(公告)号：US20170126215A1
公开(公告)日：2017-05-04
申请号：US15403951
申请日：2017-01-11
Applicant: SKYWORKS SOLUTIONS, INC.
CPC classification number: H03K3/356104 , H01L23/66 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/15184 , H02M3/07 , H03F3/189 , H03F3/24 , H03F2200/451 , H03K17/04 , H03K17/04123 , H03K17/6872 , H03K17/693 , H04B7/24 , H01L2924/00014
Abstract: Apparatus and methods for level shifting in a radio frequency system are provided. In certain configurations, a radio frequency system includes a level shifter operable to provide level shifting to an input signal. The level shifter is biased by a bias voltage and powered by a supply voltage and a charge pump voltage. The radio frequency system further includes a charge pump configured to provide the charge pump voltage and to receive a mode signal operable to enable the charge pump in a first state and to disable the charge pump in a second state. The radio frequency system further includes a level shifter control circuit configured to control the bias voltage to track the charge pump voltage when the mode signal is in the first state, and to control the bias voltage with the supply voltage when the mode signal is in the second state.
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公开(公告)号：US09577626B2
公开(公告)日：2017-02-21
申请号：US14745818
申请日：2015-06-22
Applicant: Skyworks Solutions, Inc.
IPC: H03K17/04 , H03K17/0412 , H03K17/693
CPC classification number: H03K3/356104 , H01L23/66 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/15184 , H02M3/07 , H03F3/189 , H03F3/24 , H03F2200/451 , H03K17/04 , H03K17/04123 , H03K17/6872 , H03K17/693 , H04B7/24 , H01L2924/00014
Abstract: Apparatus and methods for controlling radio frequency (RF) switches are disclosed. Provided herein are apparatus and methods for controlling RF switches. In certain configurations, an RF system includes a charge pump for generating a charge pump voltage, an RF switch, a level shifter for turning on or off the RF switch, and a level shifter control circuit for controlling the level shifter. The charge pump receives a mode signal used to enable or disable the charge pump. Additionally, the level shifter receives power in part from the charge pump voltage, and controls the RF switch based on a switch enable signal. The level shifter control circuit receives the mode signal and biases the level shifter with a bias voltage that changes based on a state of the mode signal.
Abstract translation: 公开了用于控制射频（RF）开关的装置和方法。 本文提供了用于控制RF开关的装置和方法。 在某些配置中，RF系统包括用于产生电荷泵电压的电荷泵，RF开关，用于导通或关断RF开关的电平移位器，以及用于控制电平移位器的电平移位器控制电路。 电荷泵接收用于启用或禁用电荷泵的模式信号。 此外，电平转换器部分地从电荷泵电压接收功率，并且基于开关使能信号来控制RF开关。 电平移位器控制电路接收模式信号并且以基于模式信号的状态改变的偏置电压来偏置电平移位器。
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3.发明申请公开(公告)号：US20210184720A1
公开(公告)日：2021-06-17
申请号：US16949730
申请日：2020-11-12
Applicant: Skyworks Solutions, Inc.
Inventor： Robert John Thompson , Timothy M. Faughn , Jonathan Christian Crandall
Abstract: Front end systems with switched termination for enhanced intermodulation distortion performance are provided herein. The switched termination can be used on transmit paths and/or receive paths of the front end system to suppress impedance variation when the signal paths are inactive. For example, with respect to switched termination for transmit paths, a front end system can include a frequency multiplexing circuit connected to a band switch by a first radio frequency (RF) signal path and by a second RF signal path. The band switch selectively provides the frequency multiplexing circuit with a first transmit signal over the first RF signal path and with a second transmit signal over the second RF signal path. The front end system further includes a switched termination circuit in shunt with the first RF signal path and operable to turn on to suppress impedance variation when the first RF signal path is inactive.
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公开(公告)号：US10483843B2
公开(公告)日：2019-11-19
申请号：US15646411
申请日：2017-07-11
Applicant: SKYWORKS SOLUTIONS, INC.
Abstract: Apparatus and methods for multi-mode charge pumps are disclosed herein. In certain configurations, a multi-mode charge pump includes an output terminal, a mode control circuit that operates the multi-mode charge pump in a selected mode, a first switched capacitor, a capacitor charging circuit, and a plurality of switches. The capacitor charging circuit connects a first end of the first switched capacitor to a charging voltage in a first phase of a clock signal, and connects the first end of the first switched capacitor to a reference voltage in a second phase of the clock signal. The charging voltage has a voltage level that changes based on the selected mode. The plurality of switches connect a second end of the first switched capacitor to the reference voltage in the first phase, and connect the second end of the first switched capacitor to the output terminal in the second phase.
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5.发明授权Devices and methods related to field-effect transistor structures for radio-frequency applications 有权与射频应用场效应晶体管结构相关的器件和方法公开(公告)号：US09064746B2
公开(公告)日：2015-06-23
申请号：US13672410
申请日：2012-11-08
Applicant: Skyworks Solutions, Inc.
Inventor： Jonathan Christian Crandall
CPC classification number: H01L27/1203 , H01L27/0207 , H01L27/1211 , H01L29/0692 , H01L29/41758 , H01L29/66568 , H01L29/78 , H01L2224/48091 , H01L2224/48227 , H01L2924/15184 , H01L2924/15192 , H01L2924/181 , H01L2924/19105 , H04B1/38 , H04B1/3827 , H04B1/40 , H01L2924/00014 , H01L2924/00012
Abstract: Disclosed are devices and methods related to field-effect transistor (FET) structures configured to provide reduced per-area values of resistance in the linear operating region (Rds-on). Typical FET devices such as silicon-on-insulator (SOI) device require larger device sizes to desirably lower the Rds-on values. However, such increases in size result in undesirably larger die sizes. Disclosed are various examples of shapes of source, drain, and corresponding gate that yield reduced Rds-on values without having to increase the device size. In some implementations, such FET devices can be utilized in high power radio-frequency (RF) switching applications.
Abstract translation: 公开了与场效应晶体管（FET）结构相关的器件和方法，其被配置为在线性工作区域（Rds-on）中提供电阻的减小的每面积值。 诸如绝缘体上硅（SOI）器件的典型FET器件需要更大的器件尺寸以期望降低Rds-on值。 然而，这种尺寸的增加导致不期望的较大的模头尺寸。 公开了源极，漏极和相应栅极的形状的各种示例，其产生降低的Rds-on值而不必增加器件尺寸。 在一些实现中，这种FET器件可以用于高功率射频（RF）切换应用中。
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Patent Agency Ranking
6.发明申请DEVICES AND METHODS RELATED TO FIELD-EFFECT TRANSISTOR STRUCTURES FOR RADIO-FREQUENCY APPLICATIONS 有权与无线电频率应用的场效应晶体管结构相关的器件和方法公开(公告)号：US20130115895A1
公开(公告)日：2013-05-09
申请号：US13672410
申请日：2012-11-08
Applicant: Skyworks Solutions, Inc.
Inventor： Jonathan Christian Crandall
CPC classification number: H01L27/1203 , H01L27/0207 , H01L27/1211 , H01L29/0692 , H01L29/41758 , H01L29/66568 , H01L29/78 , H01L2224/48091 , H01L2224/48227 , H01L2924/15184 , H01L2924/15192 , H01L2924/181 , H01L2924/19105 , H04B1/38 , H04B1/3827 , H04B1/40 , H01L2924/00014 , H01L2924/00012
Abstract: Disclosed are devices and methods related to field-effect transistor (FET) structures configured to provide reduced per-area values of resistance in the linear operating region (Rds-on). Typical FET devices such as silicon-on-insulator (SOI) device require larger device sizes to desirably lower the Rds-on values. However, such increases in size result in undesirably larger die sizes. Disclosed are various examples of shapes of source, drain, and corresponding gate that yield reduced Rds-on values without having to increase the device size. In some implementations, such FET devices can be utilized in high power radio-frequency (RF) switching applications.
Abstract translation: 公开了与场效应晶体管（FET）结构相关的器件和方法，其被配置为在线性工作区域（Rds-on）中提供电阻的减小的每面积值。 诸如绝缘体上硅（SOI）器件的典型FET器件需要更大的器件尺寸以期望降低Rds-on值。 然而，这种尺寸的增加导致不期望的较大的模头尺寸。 公开了源极，漏极和相应栅极的形状的各种示例，其产生降低的Rds-on值而不必增加器件尺寸。 在一些实现中，这种FET器件可以用于高功率射频（RF）切换应用中。
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7.发明申请公开(公告)号：US20200343933A1
公开(公告)日：2020-10-29
申请号：US16946334
申请日：2020-06-17
Applicant: Skyworks Solutions, Inc.
Inventor： Robert John Thompson , Timothy M. Faughn , Jonathan Christian Crandall
Abstract: Front end systems with switched termination for enhanced intermodulation distortion performance are provided herein. The switched termination can be used on transmit paths and/or receive paths of the front end system to suppress impedance variation when the signal paths are inactive. For example, with respect to switched termination for transmit paths, a front end system can include a frequency multiplexing circuit connected to a band switch by a first radio frequency (RF) signal path and by a second RF signal path. The band switch selectively provides the frequency multiplexing circuit with a first transmit signal over the first RF signal path and with a second transmit signal over the second RF signal path. The front end system further includes a switched termination circuit in shunt with the first RF signal path and operable to turn on to suppress impedance variation when the first RF signal path is inactive.
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8.发明授权公开(公告)号：US10727894B2
公开(公告)日：2020-07-28
申请号：US16393109
申请日：2019-04-24
Applicant: Skyworks Solutions, Inc.
Inventor： Robert John Thompson , Timothy M. Faughn , Jonathan Christian Crandall
Abstract: Front end systems with switched termination for enhanced intermodulation distortion performance are provided herein. The switched termination can be used on transmit paths and/or receive paths of the front end system to suppress impedance variation when the signal paths are inactive. For example, with respect to switched termination for transmit paths, a front end system can include a frequency multiplexing circuit connected to a band switch by a first radio frequency (RF) signal path and by a second RF signal path. The band switch selectively provides the frequency multiplexing circuit with a first transmit signal over the first RF signal path and with a second transmit signal over the second RF signal path. The front end system further includes a switched termination circuit in shunt with the first RF signal path and operable to turn on to suppress impedance variation when the first RF signal path is inactive.
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公开(公告)号：US20200119637A1
公开(公告)日：2020-04-16
申请号：US16654406
申请日：2019-10-16
Applicant: Skyworks Solutions, Inc.
IPC: H02M3/07
Abstract: Apparatus and methods for multi-mode charge pumps are disclosed herein. In certain configurations, a multi-mode charge pump includes an output terminal, a mode control circuit that operates the multi-mode charge pump in a selected mode, a first switched capacitor, a capacitor charging circuit, and a plurality of switches. The capacitor charging circuit connects a first end of the first switched capacitor to a charging voltage in a first phase of a clock signal, and connects the first end of the first switched capacitor to a reference voltage in a second phase of the clock signal. The charging voltage has a voltage level that changes based on the selected mode. The plurality of switches connect a second end of the first switched capacitor to the reference voltage in the first phase, and connect the second end of the first switched capacitor to the output terminal in the second phase.
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10.发明申请公开(公告)号：US20160133645A1
公开(公告)日：2016-05-12
申请号：US14846437
申请日：2015-09-04
Applicant: Skyworks Solutions, Inc.
Inventor： Jonathan Christian Crandall
IPC: H01L27/12 , H01L29/06 , H01L27/02 , H04B1/3827 , H04B1/40
CPC classification number: H01L27/1203 , H01L27/0207 , H01L27/1211 , H01L29/0692 , H01L29/41758 , H01L29/66568 , H01L29/78 , H01L2224/48091 , H01L2224/48227 , H01L2924/15184 , H01L2924/15192 , H01L2924/181 , H01L2924/19105 , H04B1/38 , H04B1/3827 , H04B1/40 , H01L2924/00014 , H01L2924/00012
Abstract: Disclosed are devices and methods related to radio-frequency (RF) switches having silicon-on-insulator (SOI) field-effect transistors (FETs). In some embodiments, an RF switch can include an FET with shaped source, drain, and gate selected to yield a reduced per-area value of resistance in linear operating region (Rds-on). In some implementations, a plurality of such FETs can be connected in series to allow use of SOI technology in high power RF switching applications while maintaining a relatively small die size.
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