公开(公告)号：US20220029300A1

公开(公告)日：2022-01-27

申请号：US17312090

申请日：2019-12-02

Applicant: Sharp Kabushiki Kaisha ,  KYMETA CORPORATION

Inventor： Takeshi HARA ,  Susumu NAKANO ,  Koji YASUDA ,  Yoji TANIGUCHI ,  Yoshinori TANAKA ,  Ryan A. STEVENSON ,  Steve LINN ,  Cagdas VAREL ,  Colin SHORT ,  Felix CHEN

IPC: H01Q13/22 ,  H01Q21/00 ,  H01Q1/22 ,  G02F1/1339 ,  H01Q3/34

Abstract: A scanning antenna includes a transmission and/or reception region including a plurality of antenna units and a non-transmission and/or reception region other than the transmission and/or reception region. The scanning antenna includes a TFT substrate, a slot substrate, a liquid crystal layer, a seal portion surrounding the liquid crystal layer, a wall structure (additional seal portion) disposed in a region surrounded by the seal portion in the non-transmission and/or reception region, a reflective conductive plate, a first spacer structure defining a first gap between a first dielectric substrate and a second dielectric substrate in the transmission and/or reception region, and a second spacer structure disposed in the wall structure and defining a second gap wider than the first gap. The wall structure includes a first main side face and a second main side face that intersect a surface of the first dielectric substrate, and at least one of the first main side face and the second main side face includes a plurality of recessed portions and/or a plurality of protruding portions when viewed from a normal direction of the first dielectric substrate.

公开(公告)号：US20220037781A1

公开(公告)日：2022-02-03

申请号：US17312123

申请日：2019-12-02

Applicant: Sharp Kabushiki Kaisha ,  Kymeta Corporation

Inventor： Takeshi HARA ,  Yoshinori TANAKA ,  Susumu NAKANO ,  Ryan A. STEVENSON ,  Steve LINN ,  Cagdas VAREL ,  Colin SHORT ,  Felix CHEN

IPC: H01Q3/30 ,  H01Q19/10 ,  H01Q9/04

Abstract: A scanning antenna includes a transmission and/or reception region including a plurality of antenna units and a non-transmission and/or reception region other than the transmission and/or reception region. The scanning antenna includes a TFT substrate, a slot substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, a seal portion provided in the non-transmission and/or reception region and surrounding the liquid crystal layer, a reflective conductive plate disposed opposing a second main surface of a second dielectric substrate with a dielectric layer interposed between the reflective conductive plate and the second main surface, a first spacer structure defining a first gap between a first dielectric substrate and the second dielectric substrate in the transmission and/or reception region, and a second spacer structure defining a second gap between the first dielectric substrate and the second dielectric substrate in the non-transmission and/or reception region, the second gap being wider than the first gap. The second spacer structure is disposed within the seal portion or within a region surrounded by the seal potion.

公开(公告)号：US20220029289A1

公开(公告)日：2022-01-27

申请号：US17312089

申请日：2019-12-02

Applicant: Sharp Kabushiki Kaisha ,  KYMETA CORPORATION

Inventor： Kenichi KITOH ,  Takeshi HARA ,  Susumu NAKANO ,  Yoshinori TANAKA ,  Ryan A. STEVENSON ,  Steve LINN ,  Cagdas VAREL ,  Colin SHORT ,  Felix CHEN

IPC: H01Q3/36 ,  H01Q9/04 ,  H01Q19/10

Abstract: A scanning antenna includes a transmission and/or reception region including a plurality of antenna units and a non-transmission and/or reception region other than the transmission and/or reception region. The scanning antenna includes a TFT substrate, a slot substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, a seal portion provided in the non-transmission and/or reception region and surrounding the liquid crystal layer, and a reflective conductive plate disposed opposing a second main surface of a second dielectric substrate with a dielectric layer interposed between the reflective conductive plate and the second main surface. The slot electrode includes an opening or a recessed portion formed in the non-transmission and/or reception region and in the region surrounded by the seal portion.

公开(公告)号：US20140367683A1

公开(公告)日：2014-12-18

申请号：US14478055

申请日：2014-09-05

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshifumi OHTA ,  Go MORI ,  Hirohiko NISHIKI ,  Yoshimasa CHIKAMA ,  Tetsuya AITA ,  Masahiko SUZUKI ,  Okifumi NAKAGAWA ,  Michiko TAKEI ,  Yoshiyuki HARUMOTO ,  Takeshi HARA

IPC: H01L29/22 ,  H01L29/786

CPC classification number: H01L29/22 ,  G02F1/1368 ,  G02F2202/10 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Abstract translation: 本发明提供一种能够实现具有稳定晶体管特性的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管及其制造方法，以及配备有该薄膜晶体管的显示装置。 本发明的氧化物半导体是薄膜晶体管的氧化物半导体。 氧化物半导体包括铟，镓，锌和氧作为构成原子，并且氧化物半导体的氧含量为化学计量条件的87％至95％，以原子单位计为100％。

公开(公告)号：US20150303307A1

公开(公告)日：2015-10-22

申请号：US14432997

申请日：2013-09-30

Applicant: Sharp Kabushiki Kaisha

Inventor： Takeshi HARA ,  Hirohiko NISHIKI ,  Izumi ISHIDA ,  Shogo MURASHIGE

IPC: H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/24 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/28008 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/78606

Abstract: This semiconductor device is provided with: a semiconductor film that comprises an oxide semiconductor, and includes a channel region; a first inorganic insulating film formed on the semiconductor film; a first organic insulating film formed on the first inorganic insulating film; and an inorganic film group. The inorganic film group has: a first electrode comprising an inorganic conductive film formed on the first organic insulating film; a second inorganic insulating film formed on the first electrode; and a second electrode that comprises an inorganic conductive film formed on the second inorganic insulating film, and is electrically connected to the semiconductor film via openings formed in such a manner as to penetrate the first inorganic insulating film, the first organic insulating film, the first electrode and the second inorganic insulating film. The first organic insulating film is disposed between the first inorganic insulating film and the inorganic film group.

Abstract translation: 该半导体装置设置有：包括氧化物半导体的半导体膜，并且包括沟道区; 形成在半导体膜上的第一无机绝缘膜; 形成在第一无机绝缘膜上的第一有机绝缘膜; 和无机膜组。 无机膜组具有：第一电极，其包含形成在第一有机绝缘膜上的无机导电膜; 形成在第一电极上的第二无机绝缘膜; 以及第二电极，其包括形成在所述第二无机绝缘膜上的无机导电膜，并且通过形成为穿过所述第一无机绝缘膜，所述第一有机绝缘膜，所述第一无机绝缘膜的开口电连接到所述半导体膜 电极和第二无机绝缘膜。 第一有机绝缘膜设置在第一无机绝缘膜和无机膜组之间。

公开(公告)号：US20190030537A1

公开(公告)日：2019-01-31

申请号：US15661609

申请日：2017-07-27

Applicant: Sharp Life Science (EU) Limited ,  SHARP KABUSHIKI KAISHA

Inventor： Benjamin James Hadwen ,  Sinéad Matthews ,  Lesley Ann PARRY-JONES ,  Adam Robinson ,  Tomohiro KOSAKA ,  Takeshi HARA ,  Tomoko TERANISHI

IPC: B01L3/00

CPC classification number: B01L3/502784 ,  B01L3/0241 ,  B01L3/502715 ,  B01L3/50273 ,  B01L3/502792 ,  B01L2200/027 ,  B01L2200/0642 ,  B01L2200/0673 ,  B01L2200/12 ,  B01L2300/0819 ,  B01L2300/0887 ,  B01L2300/089 ,  B01L2300/161 ,  B01L2400/0415 ,  B01L2400/0421 ,  B01L2400/0427

Abstract: An EWOD device includes opposing substrates defining a gap and each including an insulating surface facing the gap. Array elements include electrode elements to which actuation voltages are applied. A pre-charging structure defines a channel in fluid communication with the gap wherein the channel receives an input of a fluid reservoir for generation of the liquid droplet, and the pre-charging structure includes an electrical element electrically exposed to the channel. The electrical element pre-charges the fluid reservoir within the channel, and a portion of the gap containing the liquid droplet spaced apart from the channel is electrically isolated from the electrical element such that the liquid droplet is at a floating electrical potential when located within said portion of the gap. The electrical element may be an electrode portion that is exposed to the channel, or an externally connected pre-charging element inserted into the channel.