公开(公告)号：US20140367683A1

公开(公告)日：2014-12-18

申请号：US14478055

申请日：2014-09-05

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshifumi OHTA ,  Go MORI ,  Hirohiko NISHIKI ,  Yoshimasa CHIKAMA ,  Tetsuya AITA ,  Masahiko SUZUKI ,  Okifumi NAKAGAWA ,  Michiko TAKEI ,  Yoshiyuki HARUMOTO ,  Takeshi HARA

IPC: H01L29/22 ,  H01L29/786

CPC classification number: H01L29/22 ,  G02F1/1368 ,  G02F2202/10 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Abstract translation: 本发明提供一种能够实现具有稳定晶体管特性的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管及其制造方法，以及配备有该薄膜晶体管的显示装置。 本发明的氧化物半导体是薄膜晶体管的氧化物半导体。 氧化物半导体包括铟，镓，锌和氧作为构成原子，并且氧化物半导体的氧含量为化学计量条件的87％至95％，以原子单位计为100％。

公开(公告)号：US20190088895A1

公开(公告)日：2019-03-21

申请号：US16085606

申请日：2017-03-22

Applicant: Sharp Kabushiki Kaisha

Inventor： Mamoru ISHIDA ,  Yoshifumi OHTA ,  Takeshi HIRASE ,  Takashi OCHI ,  Tohru SENOO ,  Tohru SONODA

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56 ,  G06F3/0488 ,  G06F3/041 ,  H01L27/32

CPC classification number: H01L51/504 ,  G06F3/041 ,  G06F3/0488 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01L27/3244 ,  H01L51/0097 ,  H01L51/5253 ,  H01L51/5262 ,  H01L51/56

Abstract: An organic EL display device includes an organic EL display panel having a plastic substrate exhibiting flexibility and organic EL elements formed on the plastic substrate, a first inorganic layer provided on an upper surface of the organic EL display panel, and a second inorganic layer provided on a lower surface of the organic EL display panel. The entire thickness T of the organic EL display device is equal to or less than 74 μm.

公开(公告)号：US20150356899A1

公开(公告)日：2015-12-10

申请号：US14759440

申请日：2013-12-25

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Shigetsugu YAMANAKA ,  Shinji NAKAGAWA ,  Hiroyuki FURUKAWA ,  Yoshifumi OHTA

IPC: G09G3/14 ,  G09G3/20 ,  G09G3/32

CPC classification number: G09G3/14 ,  G09G3/2011 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3283 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/0271 ,  G09G2320/045 ,  G09G2320/046 ,  G09G2320/0633 ,  G09G2340/02 ,  H01L51/50

Abstract: An embodiment of the present invention is directed to reducing a memory capacity required for saving compensating data (data used for compensating variations and the like in characteristic of a drive transistor) compared to conventional examples, in a display device. An organic EL display device using an oxide TFT for a drive transistor is provided with: a low pass filter for extracting low frequency component data from pixel current data as data of a drive current of the drive transistor; a first computing portion for obtaining high frequency component data by obtaining a difference between the pixel current data and the low frequency component data; a down-sampling portion for extracting data from the low frequency component data at predetermined sampling intervals; and a high frequency signal compression processing portion for extracting only high amplitude data out of the high frequency component data.

Abstract translation: 在显示装置中，本发明的一个实施例涉及减少用于保存补偿数据所需的存储器容量（用于补偿驱动晶体管的特性中的变化等的数据）。 使用用于驱动晶体管的氧化物TFT的有机EL显示装置设置有：低通滤波器，用于从像素电流数据中提取低频分量数据作为驱动晶体管的驱动电流的数据; 第一计算部分，用于通过获得像素电流数据和低频分量数据之间的差来获得高频分量数据; 下采样部分，用于以预定的采样间隔从低频分量数据中提取数据; 以及用于仅从高频分量数据中提取高振幅数据的高频信号压缩处理部分。

公开(公告)号：US20200185644A1

公开(公告)日：2020-06-11

申请号：US16623461

申请日：2017-06-21

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshifumi OHTA

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

Abstract: A display device includes a light-emitting element layer including a light-emitting element, a TFT layer formed in a lower layer than the light-emitting element layer and including a transistor configured to be used to drive the light-emitting element, and a sealing layer with which the light-emitting element layer is covered. The sealing layer includes a first inorganic sealing film and a second inorganic sealing film in an upper layer than the first inorganic sealing film, and an end face of the TFT layer is covered with the second inorganic sealing film.

公开(公告)号：US20160055791A1

公开(公告)日：2016-02-25

申请号：US14784391

申请日：2014-03-04

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Noritaka KISHI ,  Hiromitsu KATSUI ,  Noboru NOGUCHI ,  Masanori OHARA ,  Shigetsugu YAMANAKA ,  Yoshifumi OHTA

IPC: G09G3/30

CPC classification number: G09G3/30 ,  G09G3/3241 ,  G09G3/3266 ,  G09G2300/0426 ,  G09G2310/0202 ,  G09G2310/0251 ,  G09G2310/0275 ,  G09G2320/0285 ,  G09G2320/045 ,  G09G2330/021 ,  G09G2330/027 ,  G09G2330/028 ,  G09G2330/12

Abstract: A data line drive circuit provides a voltage according to a detection voltage and to a reference voltage, between the gate and source of a drive transistor in a pixel circuit, and detects a drive current having passed through the drive transistor and outputted external to the pixel circuit. A threshold voltage correction memory stores, for each pixel circuit, data representing a threshold voltage of the drive transistor. A display control circuit controls the reference voltage based on the data stored in the threshold voltage correction memory. By this, even if the threshold voltage of the drive transistor is changed, the drive current can be detected with a high accuracy. The threshold voltage correction memory may store, for each pixel circuit, data representing a difference between the threshold voltage of the drive transistor and the reference voltage.

Abstract translation: 数据线驱动电路根据像素电路中的驱动晶体管的栅极和源极之间的检测电压和参考电压提供电压，并且检测通过驱动晶体管的驱动电流并输出到像素外部 电路。 阈值电压校正存储器针对每个像素电路存储表示驱动晶体管的阈值电压的数据。 显示控制电路基于存储在阈值电压校正存储器中的数据来控制参考电压。 由此，即使驱动晶体管的阈值电压发生变化，也能够高精度地检测驱动电流。 对于每个像素电路，阈值电压校正存储器可以存储表示驱动晶体管的阈值电压与参考电压之差的数据。